11 Papers
65 Citations
Y. G. Chen is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: Diamond & Ohmic contact. The author has an hindex of 8, co-authored 11 publications.
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Papers
Investigation of specific contact resistance of ohmic contacts to B-doped homoepitaxial diamond using transmission line model
TL;DR: In this paper, the specific contact resistances determined from linear TLM corresponding to different lengths of rectangular contacts were in the order of 10−4 Ω cm2, which would satisfy the operational requirements of diamond electronic devices, provided the dopant concentration in diamond can be increased to 1019−1020 cm−3.
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Electrical properties of graphite/homoepitaxial diamond contact
Y. G. Chen,M. Hasegawa,Hideyo Okushi,Satoshi Koizumi,Hiroaki Yoshida,Hiroaki Yoshida,Tadashi Sakai,Naoto Kobayashi +7 more
TL;DR: In this paper, the electrical properties of graphitic electrodes formed in sulfur- and boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices were studied.
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Characterization of capacitance–voltage features of Ni/diamond Schottky diodes on oxidized boron-doped homoepitaxial diamond film
TL;DR: In this paper, the electrical properties of Ni/diamond Schottky diodes fabricated on oxidized boron-doped homoepitaxial diamond film have been investigated in order to investigate the electrical behavior of diamond-based electronic devices.
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Electrical and optical characterizations of (001)-oriented homoepitaxial diamond p–n junction
Toshiharu Makino,Hiromitsu Kato,Masahiko Ogura,Hideyuki Watanabe,Sung-Gi Ri,Y. G. Chen,Satoshi Yamasaki,Satoshi Yamasaki,Hideyo Okushi +8 more
TL;DR: In this article, the authors have succeeded in fabricating (001)-oriented diamond p-n junctions with clear diode characteristics and conformed ultraviolet (UV) light emission by current-injection at room temperature.
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Schottky junction properties on high quality boron-doped homoepitaxial diamond thin films
TL;DR: In this article, annealing effect of boron-doped homoepitaxial diamond film on Schottky junction properties have been conducted to investigate the origin of the “pinning” states in oxidized surface of diamond.
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