We study the radiation effects of the Low Gain Avalanche Detector (LGAD) sensors developed by the Institute of High Energy Physics (IHEP) and the Novel Device Laboratory (NDL) of Beijing Normal University in China. These sensors have been irradiated at the China Institute of Atomic Energy (CIAE) using 100 MeV proton beam with five different fluences from 7 × 1 0 14 neq/cm 2 up to 4.5 × 1 0 15 neq/cm 2 . The result indicates that the effective doping concentration in the gain layer decreases with the increase of irradiation fluence, as expected by the acceptor removal mechanism. By comparing data and model gives the acceptor removal coefficient cA=(5.52±0.58)×10 − 16  cm 2 , which shows the NDL sensor has fairly good radiation resistance. The time resolution of the sensors after irradiation was measured at (−30 ± 2) °C.

Radiation effects on NDL prototype LGAD sensors after proton irradiation

Low Gain Avalanche Detectors (LGAD) are silicon particle sensors with intrinsic gain through a thin p-type multiplication layer inserted between n-type implant and p-type bulk. The first prototype of LGAD sensors in China have been developed at the Institute of High Energy Physics (IHEP) of Chinese Academic Sciences and the Novel Device Laboratory (NDL) of Beijing Normal University. With an active thickness of 33 μ m, good breakdown performance, gain > 10, these sensors have reached jitter contribution of 10 ps to timing resolution with laser tests.

Characterization of the first prototype NDL Low Gain Avalanche Detectors (LGAD)

We report a precise TCAD simulation for low gain avalanche detector (LGAD)
with calibration by secondary ion mass spectroscopy (SIMS). The radiation model
- LGAD Radiation Damage Model (LRDM) combines local acceptor degeneration with
global deep energy levels is proposed. The LRDM could predict the leakage
current level and the behavior of capacitance for irradiated LGAD sensor at -30
$^{\circ}$C after irradiation fluence $\rm \Phi_{eq}=2.5 \times 10^{15}
~n_{eq}/cm^{2}$.

TCAD simulation and radiation damage modeling for low gain avalanche detector

This paper will show the simulation and testing results of 50μm thick Low Gain Avalanche Detectors (LGAD) sensors designed by the Institute of High Energy Physics (IHEP) and fabricated by the Institute of Micro Electronics (IME) of Chinese Academy of Sciences. Testing results show that the IHEP-IME sensors with higher dose for gain layer have lower breakdown voltages and higher gain layer voltage for capacitance-voltage properties, which are consistent with the TCAD simulation results. Beta testing results show that the time resolution of IHEP-IME sensors are better than 35ps and the collected charges of IHEP-IME sensors are larger than 15fC before irradiation, which fulfill the required specifications of sensors before irradiations for ATLAS HGTD project.

Low Gain Avalanche Detectors with Time Resolution better than 35ps Developed by IHEP and IME for ATLAS HGTD project

A High-Granularity Timing Detector (HGTD) is proposed based on the Low-Gain Avalanche Detector (LGAD) for the ATLAS experiment to satisfy the time resolution requirement for the up-coming High Luminosity at LHC (HL-LHC). We report on beam test results for two proto-types LGADs (BV60 and BV170) developed for the HGTD. Such modules were manufactured by the Institute of High Energy Physics (IHEP) of Chinese Academy of Sciences (CAS) collaborated with Novel Device Laboratory (NDL) of the Beijing Normal University. The beam tests were performed with 5 GeV electron beam at DESY. The timing performance of the LGADs was compared to a trigger counter consisting of a quartz bar coupled to a SiPM readout while extracting reference SiPM by fitting with a Gaussian function. The time resolution was obtained as 41 ps and 63 ps for the BV60 and the BV170, respectively.

Beam test results of NDL Low Gain Avalanche Detectors (LGAD)

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Beam test results of NDL Low Gain Avalanche Detectors (LGAD)