Mid-IR second-order NLO crystal is indispensable in the frequency conversion applications in the mid-IR region. Compared with DUV and UV/Vis/near-IR NLO crystals, practical mid-IR NLO crystals are relatively rare, and many of them are still at the stage of laboratory research. This chapter reviews the recent progress on the mid-IR NLO crystals, which mainly includes growing the classical mid-IR NLO crystals into large high-quality ones or into quasi-phase-matching structures that are suitable for the laser devices by various growth methods and exploring new potential mid-IR NLO crystals by introducing new design and synthesis strategies. Recent mid-IR NLO crystals can be divided into four categories, i.e., classical binary and ternary metal pnictides and chalcogenides, quaternary metal chalcogenides, binary and ternary metal halides, and different-bond-type hybrid compounds that contain at least two types of obviously different chemical bonds in the crystal structures. Metal pnictides and chalcogenides have got much attention on growing large crystals. Different-bond-type hybrid is a new family of mid-IR NLO materials, and many of them were found in the last decade. In metal halide system, both progress in growing large crystals and discovering new ones have been made.

Large Crystal Growth and New Crystal Exploration of Mid-Infrared Second-Order Nonlinear Optical Materials

https://iopscience.iop.org/article/10.1088/2053-1591/ab4b81/pdf

DFT study of the electronic and optical properties of ternary chalcogenides AlX2Te4

Capacitance and conductance characterization of nano-ZnGa2Te4/n-Si diode

Effect of Nb, Ta and V replacements on electronic, optical and elastic properties of NbCu3Se4: A GGA+U study

X-ray diffraction pattern and AFM results confirm the nanostructure of p-ZnGa2Se4/n-Si. The unit cell lattice parameters, the crystallite size L, the dislocation density δ, and the main internal strain e were calculated. The temperature and frequency-dependent electrical characteristics of the Al/p-ZnGa2Se4/n-Si/Al heterojunction diode (HJD) have been investigated to determine the interface states which are responsible for the non-ideal behavior of the characteristics of the diode. The capacitance–voltage (C–V), conductance–voltage (G–V), and series resistance–voltage (R
 s–V) characteristics of the diode have been analyzed in the frequency range of 5 kHz–1 MHz and temperature range of 303–423 K. The interfaces states of the diode were determined using conductance–voltage technique. The interface state density profile for the diode was obtained as a function of temperature and frequency. The values of the built-in potential V
 bi, the doping concentration N
 d and the barrier height φ
 b(C–V) of the diode were calculated at different temperatures and frequencies. Our experimental results revealed that both the series resistance and interface state density values must be taken into account in studying the impedance spectroscopy of HJD to stand up their performance for electronic applications characteristics.

Effect of the frequency and temperature on the complex impedance spectroscopy (C–V and G–V) of p-ZnGa2Se4/n-Si nanostructure heterojunction diode

http://dspace.univ-tlemcen.dz/bitstream/112/1946/1/FP-LAPW-investigation-of-structural-electronic-linear-and-nonlinear-optical-properties.pdf

FP-LAPW investigation of structural, electronic, linear and nonlinear optical properties of ZnIn2Te4 defect-chalcopyrite

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FP-LAPW investigation of structural, electronic, linear and nonlinear optical properties of ZnIn2Te4 defect-chalcopyrite