A method of anisotropic plasma etching of silicon to provide laterally defined recess structures therein through an etching mask employing a plasma, the method including anisotropic plasma etching in an etching step a surface of the silicon by contact with a reactive etching gas to removed material from the surface of the silicon and provide exposed surfaces; polymerizing in a polymerizing step at least one polymer former contained in the plasma onto the surface of the silicon during which the surfaces that were exposed in a preceding etching step are covered by a polymer layer thereby forming a temporary etching stop; and alternatingly repeating the etching step and the polymerizing step. The method provides a high mask selectivity simultaneous with a very high anisotropy of the etched structures.

Method of anisotropically etching silicon

This paper reviews the present knowledge on tantalum pentoxide (Ta 2 O 5 ) thin films and their applications in the field of microelectronics and integrated microtechnologies. Different methods used to produce tantalum oxide layers are described, emphazing elaboration mechanisms and key parameters for each technique. We also review recent advances in the deposition of Ta 2 O 5 in the particular field of microelectronics where high quality layers are required from the structural and electrical points of view. The physical, structural, optical, chemical and electrical properties of tantalum oxide thin films on semiconductors are then presented and essential film parameters, such as optical index, film density or dielectric permittivity, are discussed. After a reminder of the basic mechanisms that control the bulk electrical conduction in insulating films, we carefully examine the origin of leakage currents in Ta 2 O 5 and present the state-of-the-art concerning the insulating behaviour of tantalum oxide layers. Finally, applications of tantalum oxide thin films are presented in the last part of this paper. We show how Ta 2 O 5 has been employed as an antireflection coating, insulating layer, gate oxide, corrosion resistant material, and sensitive layer in a wide variety of components, circuits and sensors.

Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications

Very deep treches (up to 200 um) with high aspect ratios (up to 10) in silicon are etched using a fluorine-based plasma (SF6/O2/CHF3). Isotropic, positively and megatively (i.e. reverse) tapered as well as fully vertical walls with smooth surfaces are achieved by controlling the plasma chemistry. A convenient way to find the processing conditions needed for a vertical wall is described: the Black Silicon Method. This new procedure is checked for three different Reactive Ion Etchers (RIE); two parallel plate reactors and a hexode. The influence of the r.f. power, pressure, and gas mixture on the profile will be shown. Scanning Electron Microscope (SEM) photos are included to demonstrate the Black Silicon Method, the influence of the gases on the profile, and the use of this method in fabricating Micro Electro Mechanical Systems (MEMS).

/pdf/the-black-silicon-method-a-universal-method-for-determining-44vzjtgivk.pdf

The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control

Plasma enhanced chemical vapor deposition(PECVD) is being increasingly used for the fabrication of transparent dielectric optical films and coatings. This involves single-layer, multilayer, graded index, and nanocomposite optical thin filmsystems for applications such as optical filters, antireflective coatings, optical waveguides, and others. Beside their basic optical properties (refractive index, extinction coefficient, optical loss), these systems very frequently offer other desirable “functional” characteristics. These include hardness, scratch, abrasion, and erosion resistance, improved adhesion to various technologically important substrate materials such as polymers, hydrophobicity or hydrophilicity, long-term chemical, thermal, and environmental stability, gas and vapor impermeability, and others. In the present article, we critically review the advances in the development of plasma processes and plasmasystems for the synthesis of thin film high and low index optical materials, and in the control of plasma–surface interactions leading to desired film microstructures. We particularly underline those specificities of PECVD, which distinguish it from other conventional techniques for producing optical films (mainly physical vapor deposition), such as fabrication of graded index (inhomogeneous) layers, control of interfaces, high deposition rate at low temperature, enhanced mechanical and other functional characteristics, and industrial scaleup. Advances in this field are illustrated by selected examples of PECVD of antireflective coatings, rugate filters, integrated optical devices, and others.

Plasma deposition of optical films and coatings: A review

Die Erfindung betrifft ein Verfahren zum anisotropen Atzen von Silicium von vorzugsweise mit einer Atzmaske definierten Strukturen, mittels eines Plasmas, wobei wahrend eines Polymerisationsschrittes auf die durch die Atzmaske definierte laterale Begrenzung der Strukturen ein Polymer aufgebracht wird, das wahrend des nachfolgenden Atzschrittes teilweise wieder abgetragen und auf den infolge der Atzreaktion neu gebildeten, tiefer gelegenen Strukturseitenwanden redeponiert wird, und wobei das Atzen mit einem Atzgas, das 3-40 Vol.-% Sauerstoff aufweist, durchgefuhrt wird. DOLLAR A Hierdurch kann eine Vermeidung von Schwefelkontamination im Abgasbereich beim Hochratenatzen von Silicium erreicht werden.

Verfahren zum anisotropen ätzen von silicium

Distributed electron cyclotron resonance or DECR, a new plasma excitation technique well adapted to microwave multipolar plasmas, is described. The novel reactor concept is based upon the use of several microwave linear applicators working at the ECR mode along the multipolar confinement magnets. At a microwave frequency of 2.45 GHz, large volumes of highly homogeneous plasmas with an electron temperature of the order of 3 eV and ion densities better than 1011 cm−3 are currently being produced in DECR reactors.

Microwave multipolar plasmas excited by distributed electron cyclotron resonance: concept and performance

A plasma etching reactor is described which associates surface magnetic confinement, microwave discharge, and independently controlled substrate biasing. Preliminary measurements show that the reactor produces reactive plasmas allowing anisotropic fine line etching at low ion energy.

Plasma etching in magnetic multipole microwave discharge

Etching experiments of silicon in low pressure SF6/Ar and SF6/Kr plasmas under low energy bombardment are conducted using microwave multipolar plasmas. Experimental results using Langmuir probe, emission spectroscopy, and etch profile analysis show the evolution of the etch rate and anisotropy as a function of the density of the reactive species, the ion flux, and ion energy. A correlation between the flux of incident species and etching kinetics has been found. Evolution of the vertical etch yield per incident fluorine atom (result of the interaction process at the plasma–surface interface) as a function of the ratio of ion flux to fluorine atom flux (representative of the ion and fluorine atom generation in the plasma) implicitly allows the influence of certain external parameters such as pressure, excitation power, carrier gas to be taken into account. These results are compared with the current etching models, i.e., damage and sputter desorption models. A transition to perfect anisotropy is observed b...

The etching of silicon in diluted SF6 plasmas: Correlation between the flux of incident species and the etching kinetics

Etching experiments have been conducted on phosphorus doped Si 〈100〉 samples in low pressure SF6/Ar microwave multipolar plasmas which have been characterized. The influence of SF6 partial pressure on anisotropy has been determined. Strictly anisotropic etching of silicon was obtained under SF6 pressure of about 3×10−4 Torr in an SF6/Ar gas mixture, the total pressure being (3–5)×10−3 Torr. An etching rate of ∼150 nm/min, without any undercutting, has been achieved under low energy ion impact. The anisotropic etching mechanisms involved in the SF6/Ar system are discussed.

Anisotropic etching of silicon using an SF6/Ar microwave multipolar plasma

The fulfilment of the increasingly stringent requirements for selectivity and anisotropy in etching relies on absolute control of the interaction between a plasma and the substrate being processed. In the present study, the way in which the working point of radiofrequency capacitive discharges determines this interaction is shown and the definition of etching processes is seen to be the result of necessary compromises. Improved etching control can be obtained using multipolar magnetic field confinement discharges, which produce large volumes of low-pressure homogeneous isotropic quiescent DC plasma. So far, the field of application of these hot-cathode-generated plasmas has been limited to non-corrosive gases. A microwave discharge used in association with multipolar magnetic field confinement produces plasmas exhibiting the characteristics required for accurate etching control.

Microwave multipolar plasmas: a possible solution for etching in microelectronics?

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