The invention discloses a nitride high electronic mobility transistor extension structure of a component gradually-changed ALyGal-yN buffer layer. A conduction band step can still be formed by using the component gradually-changed ALyGal-yN buffer layer and a GaN channel layer, 2 diethylene glycol (DEG) area limiting can be strengthened, and microwave performance and power characteristics of a device can be improved. The ALyGal-yN buffer layer adopts a structure gradually changing from 0 to y, heat conductivity of the buffer layer can be improved, and self-heating effects of a high electronic mobility transistor (HEMT) device can be effetcivley reduced. Compared with a common constant component ALyGal-yN buffer layer, the component gradually-changed ALyGal-yN buffer layer can effectively reduce defect concentration such as dislocation in the buffer layer and contributes to further promoting of performance and reliability of the device.

Nitride high electronic mobility transistor extension structure of component gradually-changed ALyGal-yN buffer layer

The invention provides a preparation method of a low noise GaN HEMT device. The preparation method comprises the steps that 1) an AlGaN/GaN heterojunction material with a component gradient back barrier grows; 2) a medium field plate is prepared; 3) ohmic contact is prepared; 4) an isolation region of the device is formed; 5) a gamma type gate of a TaN radical is formed through a positive photoresist stripping method; 6) by using a plasma deposition method, a Si3N4/SiO2/Si3N4 multilayer surface passivation medium is deposited on the surface of a sample; and 7) through a plasma etching method, dielectric materials on a source drain and a gate electrode are removed, so as to form a test window. The preparation method has the advantages that 1) a structure is compatible with power GaN HEMT, which is conductive to process integration; 2) voltage resistance of the device is effectively improved, and the degradation of frequency characteristics is prevented; 3) the device's ability to bear high input power is improved; and 4) the effect of a passivation process on the device frequency is reduced, and at the same time the gate stability is improved.

Preparation method of low noise GaN HEMT device

The invention relates to the micro electronic technology, and provides a GaN transistor with the high electron mobility and a manufacturing method thereof. The GaN transistor with the high electron mobility solves the problem that due to the fact that when electrons of an existing AlGaN / GaN transistor with the high electron mobility easily overflow out of a channel to enter a buffering layer, the channel clamping performance is lowered. According to the technical scheme, the GaN transistor with the high electron mobility comprises a substrate, a GaN nucleating layer, a GaN buffering layer, a GaN channel layer and an AlGaN barrier layer, and is characterized by further comprising an AlGaN back barrier layer, the AlGaN back barrier layer is arranged between the GaN buffering layer and the GaN channel layer, and in the AlGaN back barrier layer, the constituent content of Al atoms is gradually increased to a fixed numerical value from zero in the direction from the GaN nucleating layer to the GaN channel layer. The GaN transistor with the high electron mobility and the manufacturing method of the GaN transistor have the advantages that the microwave performance and the power characteristics of the GaN transistor are improved, and the method is suitable for the transistor with the high electron mobility.

GaN transistor with high electron mobility and manufacturing method thereof

The invention discloses a novel HEMT for improving the piezoelectric polarization intensity. An InGaN layer is inserted below a GaN layer to form the HEMT of an AlxGal-xN/AlN/GaN/InyGal-yN structure on the basis of an HEMT which comprises an AlN isolation layer and is of an AlGaN/AlN/GaN structure. Channels are formed between AlGaN and GaN and between GaN and InGaN respectively and contain 2DEG which is generated through the polarization effect. The InGaN layer is inserted, the lattice constant of GaN in the GaN/InGaN structure is smaller than that of InN, and therefore lattice strain happens to GaN, the intensity of piezoelectric polarization generated by strain is higher than the intensity of piezoelectric polarization between AlGaN and GaN, a device can have a better polarization effect under the same pressure, the density fluctuation of a two-dimensional electron gas face is larger, and sensitivity of the device is improved.

Novel HEMT for improving piezoelectric polarization intensity

The invention discloses an epitaxial growth method of a solar-blind UV (Ultraviolet) photocathode based on AlGaN (Aluminum Gallium Nitrogen) materials. According to the epitaxial growth method, P-type doped AlGaN materials are used as cathode emission materials. According to the epitaxial growth method of a solar-blind UV photocathode based on AlGaN materials, the obtained UV photocathode based on AlGaN materials can implement solar-blind detection, so that the preparation process of a UV detector is simplified, the manufacturing cost is saved, and the device stability is improved.

Epitaxial growth method of solar-blind UV (Ultraviolet) photocathode based on AlGaN (Aluminum Gallium Nitrogen) materials

The invention discloses an AlGaN/GaN/InGaN double hetero-junction material and a production method thereof. The AlGaN/GaN/InGaN double hetero-junction material comprises layers growing on a substrate successively of a GaN nucleating layer, a GaN buffer layer, an InGaN back barrier layer, a GaN protection layer, a GaN channel layer, an AIN inserting layer and an AlxGaN-xN barrier layer, wherein x is larger than and equal to 0.1 and smaller than and equal to 0.9. The AlGaN/GaN/InGaN double hetero-junction material improves the mobility ratio of two-dimensional electron gas at the room temperature apparently and is outstanding in the electrical property; and the production method has the advantages of being simple and easy to implement and good in repeatability.

AlGaN/GaN/InGaN double hetero-junction material and production method thereof

The invention relates to an epitaxial structure for nitride high electron mobility transistors of composite buffer layers, which includes that a growth nucleating layer is arranged on a substrate; a first buffer layer is arranged on the growth nucleating layer; a second buffer layer is arranged on the first buffer layer; a growth channel layer is arranged on the second buffer layer; and a growth barrier layer is arranged on the growth channel layer. The growth method includes baking the substrate at a high temperature in a reaction chamber after the substrate is washed and dried; growing the nucleating layer on the substrate, the first buffer layer on the nucleating layer, the second buffer layer on the first buffer layer, the growth channel layer on the second buffer layer, and the growth barrier layer on the channel layer; and reducing the temperature to the room temperature. The epitaxial structure for nitride high electron mobility transistors of composite buffer layers has the advantages of being still capable of forming conduction band discontinuity with a gallium nitride (GaN) channel layer, enhancing 2 dimensional electron gas (DEG) confinement, improving microwave performances and power characteristics of devices, being capable of improving the heat conductivity of the buffer layer, and effectively reducing self-heating effect of high electron mobility transistors (HEMT) of AlGaN buffer layer. Quality of crystals of AlyGal-yN buffer layer can be effectively improved, and the epitaxial structure is helpful for further improving the performance and reliability of devices.

Epitaxial structure for nitride high electron mobility transistors of composite buffer layers

The invention relates to a wide bandgap monocrystal film prepared from multiple buffer layers and a method. A high-V/III-ratio aluminum nitride (AlN) buffer layer is arranged on a monocrystal silicon substrate, a low-V/III-ratio AlN buffer layer is arranged on the high-V/III-ratio AlN buffer layer, a silicon carbide (SiC) monocrystal film is arranged on the low-V/III-ratio AlN buffer layer, and a wide bandgap monocrystal film is arranged on the SiC monocrystal film. A preparation process comprises the following steps that: the high-V/III-ratio AlN buffer layer is prepared on the monocrystal silicon substrate, the low-V/III-ratio AlN buffer layer is prepared on the high-V/III-ratio AlN buffer layer, the buffer layers are taken out after the temperature is lowered to the room temperature; the SiC monocrystal film is prepared on the low-V/III-ratio AlN buffer layer; the wide bandgap monocrystal film is prepared on the SiC monocrystal film; and the wide bandgap monocrystal film is taken out after the temperature is lowered to the room temperature. The wide bandgap monocrystal film and the method have the advantages that the high-V/III-ratio AlN buffer layer and the low-V/III-ratio AlN buffer layer are combined, the stress is favorably buffered, the wide bandgap monocrystal film can be easily prepared through the AlN buffer layers, n or p type SiC monocrystal films are formed through doping, the dimension is large, and the cost is low.

Wide bandgap monocrystal film prepared from multiple buffer layers and method

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

Xun Dong

Author Tools

Chat about Author

Papers

AlGaN/GaN/InGaN double hetero-junction material and production method thereof

Epitaxial structure for nitride high electron mobility transistors of composite buffer layers

Wide bandgap monocrystal film prepared from multiple buffer layers and method