Xuejun Ran
6 Papers
32 Citations
Xuejun Ran is an academic researcher. The author has contributed to research in topics: Layer (electronics) & Gallium nitride. The author has an hindex of 4, co-authored 6 publications.
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Papers
Patent
GaN dual heterogeneity node field effect transistor structure and its making method
Xiaoliang Wang,Zhiyong Ma,Xuejun Ran,Hongling Xiao,Cuimei Wang,Guoxin Hu,Jian Tang,Weijun Luo +7 more
- 17 Sep 2008
TL;DR: In this article, a gallium nitride-based double heterojunction field effect transistor structure comprises a substrate, a low temperature gallium nucleation layer or a high temperature aluminum nitride layer formed on the substrate; a high insulation layer with unintentional-doped or doped gallium-nitride; the channel layer is formed on a first aluminum-naphase inserting layer; a second aluminum-oxide inserting layer, the second aluminum oxide inserting layer and the second gallium oxide channel layer are formed on an n-type doped AlxInyGaz
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Patent
Gallium nitride based transistor structure with high electron mobility
Cuimei Wang,Jinmin Li,Xuejun Ran,Jian Tang,Hongling Xiao,Guoxin Hu,Xiaoliang Wang +6 more
- 02 Jun 2010
TL;DR: In this article, a gallium nitride-based high electron mobility transistor structure consisting of a substrate, a low temperature nucleating layer is produced on the substrate, an indium gallium-nitride insertion layer is created on the gallium n-drone based high resistivity layer, and an aluminum gallium ionide barrier layer is constructed on the aluminum galliam ionide insertion layer to effectively inhibit the current collapse effect.
10
Patent
Upside-down mounting binode In-Ga-N solar battery structure
Xiaoliang Wang,Cuibai Yang,Hongling Xiao,Guoxin Hu,Xuejun Ran,Cuimei Wang,Xiaobin Zhang,Jinmin Li +7 more
- 25 Feb 2009
TL;DR: In this paper, a flip-chip double-junction indium gallium nitride solar battery structure is described, which comprises a substrate, a gallium-nitride nucleating layer produced on the substrate, an unintentional doped gallium n-oxide buffer layer, an n-type doped InaGa N layer, a p-type heavily-doped InbGa n layer, and a p type doped IncGa n-layer.
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Patent
Unijunction indium gallium nitrogen solar battery structure and method for making the same
Xiaoliang Wang,Hongling Xiao,Cuibai Yang,Guoxin Hu,Xuejun Ran,Cuimei Wang,Xiaobin Zhang,Jianping Li,Jinmin Li +8 more
- 30 Jul 2008
TL;DR: In this paper, a single-junction InGaN solar cell structure is characterized in which the structure comprises a substrate, a low-temperature GaN nucleation layer fabricated on the substrate to increase the nucleation density of the substrate surface, an unintentionally doped GaN buffer layer fabricated in the substrate layer for reducing the defect density of an epitaxial layer and improving the crystal quality, and an n-type doped InxGa1-xN p-n junction.
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Patent
Silion carbide substrate gallium nitride high electronic transport ratio transistor and producing method
Xiaoliang Wang,Guoxin Hu,Zhiyong Ma,Xuejun Ran,Cuimin Wang,Hongling Xiao,Junxi Wang,Jianping Li,Jinmin Zeng Yipingli +8 more
- 25 Jul 2007
TL;DR: The method includes steps: selecting a substrate of silicon carbide; using chemical vapor deposition method of metallorganics to develop a nucleation layer of high temperature aluminum nitride; developing not intended doped high resistance layer or high resistance layers with gallium nitride being doped on the nucleation layers of aluminium nitride under changed temperature; changing pressure in growth cabinet, developing aluminum - gallium - nitrogen on the interposed layer of aluminum Nitride as mentioned in this paper.
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