A Strategic Review on Gallium Oxide Based Deep-Ultraviolet Photodetectors: Recent Progress and Future Prospects

Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga2O3) has emerged as a highly viable semiconductor material for new researches. This article mainly focuses on the growth processes, material characteristics, and applications of Ga2O3. Compared with single crystals and the epitaxial growth of other wide-bandgap semiconductors, large-size and high-quality β-Ga2O3 single crystals can be efficiently grown with a low cost, making them highly competitive. Thanks to the availability of high-quality single crystals, epitaxial films, and rich material systems, high-performance semiconductor devices based on Ga2O3 go through a booming development in recent years. The defects and interfaces of Ga2O3 are comprehensively analyzed owing to their significant influence on practical applications. In this study, the two most common applications of Ga2O3 materials are introduced. The high breakdown electric field, high working temperature, and excellent Baliga's figure-of-merit of Ga2O3 represent an inspiring prospect for power electronic devices. In addition, the excellent absorption in deep-ultraviolet band provides new ideas for optoelectronic detectors and ensures the dramatic progress. Finally, the summary, challenges, and prospects of the Ga2O3 materials and devices are presented and discussed.

Toward Emerging Gallium Oxide Semiconductors: A Roadmap

A highly selective Ga-modified zeolite BEA for propane dehydrogenation has been synthesized by grafting Ga on Zn-BEA followed by removal of Zn in the presence of H2. A propene selectivity of 82% at 19% propane conversion illustrates the high selectivity at 813 K. The kinetic model of the catalyzed dehydrogenation including the elementary steps of propane adsorption, first and second C-H bond cleavage, and propene and H2 desorption demonstrates that the propane dehydrogenation rate is determined by the first C-H bond cleavage at low pC3H8, while at high pC3H8, the rate is limited by the desorption of H2. The active sites have been identified as dehydrated and tetrahedrally coordinated Ga3+ in the *BEA lattice. The low selectivity toward aromatics is concluded to be associated with the high Lewis acid strength of lattice Ga3+ and the low Brønsted acid strength of the hydrated Ga sites.

Highly Active and Selective Sites for Propane Dehydrogenation in Zeolite Ga-BEA.

Abstract Ga 2 O 3 is a wide-band gap semiconductor of emergent importance for applications in electronics and optoelectronics. However, vital information of the properties of complex coexisting Ga 2 O 3 polymorphs and low-symmetry disordered structures is missing. We develop two types of machine-learning Gaussian approximation potentials (ML-GAPs) for Ga 2 O 3 with high accuracy for β / κ / α / δ / γ polymorphs and generality for disordered stoichiometric structures. We release two versions of interatomic potentials in parallel, namely soapGAP and tabGAP, for high accuracy and exceeding speedup, respectively. Both potentials can reproduce the structural properties of all the five polymorphs in an exceptional agreement with ab initio results, meanwhile boost the computational efficiency with 5 × 10 2 and 2 × 10 5 computing speed increases compared to density functional theory, respectively. Moreover, the Ga 2 O 3 liquid-solid phase transition proceeds in three different stages. This experimentally unrevealed complex dynamics can be understood in terms of distinctly different mobilities of O and Ga sublattices in the interfacial layer. 

pdf/complex-ga2o3-polymorphs-explored-by-accurate-and-general-1bntq30p0x.pdf

Complex Ga2O3 polymorphs explored by accurate and general-purpose machine-learning interatomic potentials

Gallium oxide is a promising semiconductor with great potential for efficient power electronics due to its ultra-wide band gap and high breakdown electric field. Optimization of halide vapor phase epitaxy growth of heteroepitaxial $$\upbeta$$
 -Ga2O3 layers is demonstrated using a simulation model to predict the distribution of the ratio of gallium to oxygen precursors inside the reactor chamber. The best structural quality is obtained for layers grown at 825–850 °C and with a III/VI precursor ratio of 0.2. Although the structural and optical properties are similar, the surface morphology is more deteriorated for the $$\upbeta$$
 -Ga2O3 layers grown on 5 degree off-axis sapphire substrates compared to on-axis samples even for optimized process parameters. Cathodoluminescence with a peak at 3.3 eV is typical for unintentionally doped n-type $$\upbeta$$
 -Ga2O3 and shows the appearance of additional emissions in blue and green region at ~ 3.0, ~ 2.8, ~ 2.6 and ~ 2.4 eV, especially when the growth temperatures is lowered to 800–825 °C. Estimation of the band gap energy to ~ 4.65 eV from absorption indicates a high density of vacancy defects.

/pdf/development-of-b-ga2o3-layers-growth-on-sapphire-substrates-3ojv9sbd2n.pdf

Development of β-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor.

GaTe is a two-dimensional III–VI semiconductor with suitable direct bandgap of ∼ 1.65 eV and high photoresponsivity, which makes it a promising candidate for optoelectronic applications. GaTe exists in two crystalline phases: monoclinic (m-GaTe, with space group C2/m) and hexagonal (h-GaTe, with space group P63/mmc). The phase transition between the two phases was reported under temperature-varying conditions, such as annealing, laser irradiation, etc. The explicit phase transition temperature and energy barrier during the temperature-induced phase transition have not been explored. In this work, we present a comprehensive study of the phase transition process by using first-principles energetic and phonon calculations within the quasi-harmonic approximation framework. We predicted that the phase transition from h-GaTe to m-GaTe occurs at the temperature decreasing to 261 K. This is in qualitative agreement with the experimental observations. It is a two-step transition process with energy barriers 199 meV and 288 meV, respectively. The relatively high energy barriers demonstrate the irreversible nature of the phase transition. The electronic and phonon properties of the two phases were further investigated by comparison with available experimental and theoretical results. Our results provide insightful understanding on the process of temperature-induced phase transition of GaTe.

Temperature-induced phase transition of two-dimensional semiconductor GaTe

Discovery of New Polymorphs of Gallium Oxides with Particle Swarm Optimization-Based Structure Searches

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Temperature-induced phase transition of two-dimensional semiconductor GaTe

Discovery of New Polymorphs of Gallium Oxides with Particle Swarm Optimization-Based Structure Searches