Graphene quantum dots (GQDs) that are flat 0D nanomaterials have attracted increasing interest because of their exceptional chemicophysical properties and novel applications in energy conversion and storage, electro/photo/chemical catalysis, flexible devices, sensing, display, imaging, and theranostics. The significant advances in the recent years are summarized with comparative and balanced discussion. The differences between GQDs and other nanomaterials, including their nanocarbon cousins, are emphasized, and the unique advantages of GQDs for specific applications are highlighted. The current challenges and outlook of this growing field are also discussed.

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Recent Advances on Graphene Quantum Dots: From Chemistry and Physics to Applications

The continued growth in the demand of data storage and processing has spurred the development of high-performance storage technologies and brain-inspired neuromorphic hardware. Semiconductor quantum dots (QDs) offer an appealing option for these applications since they combine excellent electronic/optical properties and structural stability and can address the requirements of low-cost, large-area, and solution-based manufactured technologies. Here, we focus on the development of nonvolatile memories and neuromorphic computing systems based on QD thin-film solids. We introduce recent advances of QDs and highlight their unique electrical and optical features for designing future electronic devices. We also discuss the advantageous traits of QDs for novel and optimized memory techniques in both conventional flash memories and emerging memristors. Then, we review recent advances in QD-based neuromorphic devices from artificial synapses to light-sensory synaptic platforms. Finally, we highlight major challenges for commercial translation and consider future directions for the postsilicon era.

Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems

Graphene quantum dot (GQD) is one of the youngest superstars of the carbon family. Since its emergence in 2008, GQD has attracted a great deal of attention due to its unique optoelectrical properties. Non-zero bandgap, the ability to accommodate functional groups and dopants, excellent dispersibility, highly tunable properties, and biocompatibility are among the most important characteristics of GQDs. To date, GQDs have displayed significant momentum in numerous fields such as energy devices, catalysis, sensing, photodynamic and photothermal therapy, drug delivery, and bioimaging. As this field is rapidly evolving, there is a strong need to identify the emerging challenges of GQDs in recent advances, mainly because some novel applications and numerous innovations on the ease of synthesis of GQDs are not systematically reviewed in earlier studies. This feature article provides a comparative and balanced discussion of recent advances in synthesis, properties, and applications of GQDs. Besides, current challenges and future prospects of these emerging carbon-based nanomaterials are also highlighted. The outlook provided in this review points out that the future of GQD research is boundless, particularly if upcoming studies focus on the ease of purification and eco-friendly synthesis along with improving the photoluminescence quantum yield and production yield of GQDs.

Synthesis, Applications, and Prospects of Graphene Quantum Dots: A Comprehensive Review

https://www.tandfonline.com/doi/pdf/10.1080/14686996.2020.1730236

Decade of 2D-materials-based RRAM devices: a review.

Organic Synaptic Transistors: The Evolutionary Path from Memory Cells to the Application of Artificial Neural Networks

In addition to cryogenic techniques, energy filtering has the potential to achieve high-performance low-noise 2-D electronic systems Assemblies based on graphene quantum dots (GQDs) have been demonstrated to exhibit interesting transport properties, including resonant tunnelling In this paper, we investigate GQDs based structures with the goal of producing energy filters for next generation lower-power lower-noise 2-D electronic systems We evaluate the electron transport properties of the proposed GQD device structures to demonstrate electron energy filtering and the ability to control the position and magnitude of the energy passband by appropriate device dimensioning We also show that the signal-to-thermal noise ratio performance of the proposed nanoscale device can be modified according to device geometry The tunability of two-dimensional GQD structures indicates a promising route for the design of electron energy filters to produce low-power and low-noise electronics

/pdf/energy-filtered-electron-transport-structures-for-low-power-4v9nj26q6l.pdf

Energy-filtered Electron Transport Structures for Low-power Low-noise 2-D Electronics.

In this paper, we model two-terminal all graphene quantum dot (GQD) based resistor-type memory devices (memristors). The resistive switching is achieved by resonant electron tunneling. We show that parallel GQDs can be used to create multi-state memory circuits. The number of states can be optimised with additional voltage sources, whilst the noise margin for each state can be controlled by appropriately choosing the branch resistance. A three-terminal GQD device configuration is also studied. The addition of an isolated gate terminal can be used to add further or modify the states of the memory device. The proposed devices provide a promising route towards volatile memory devices utilizing only atomically thin two-dimensional graphene.

Resonant tunneling based graphene quantum dot memristors

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Energy-filtered Electron Transport Structures for Low-power Low-noise 2-D Electronics.

Resonant tunneling based graphene quantum dot memristors