Topological insulator (TI), a promising quantum and semiconductor material, has gapless surface state and narrow bulk band gap. Firstly, the properties, classifications and compounds of TI are introduced. Secondly, the preparation and doping of TI are assessed. Some results are listed. (1) Although various preparation methods are used to improve the crystal quality of the TI, it cannot reach the industrialization. Fermi level regulation still faces challenges; (2) The carrier type and lattice of TI are affected by non-magnetic impurities. The most promising property is the superconductivity at low temperature; (3) Magnetic impurities can destroy the time-reversal symmetry of the TI surface, which opens the band gap on the TI surface resulting in some novel physical effects such as quantum anomalous Hall effect (QAHE). Thirdly, this paper summarizes various applications of TI including photodetector, magnetic device, field-effect transistor (FET), laser, and so on. Furthermore, many of their parameters are compared based on TI and some common materials. It is found that TI-based devices exhibit excellent performance, but some parameters such as signal to noise ratio (S/N) are still lower than other materials. Finally, its advantages, challenges and future prospects are discussed. Overall, this paper provides an opportunity to improve crystal quality, doping regulation and application of TI.

The Property, Preparation and Application of Topological Insulators: A Review

Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform for optoelectronics and photonics. The recent progress of science and technology based on topological insulators enables the exploitation of their huge application capabilities. Here, we review the recent achievements of optoelectronics, photonics, and plasmonics with topological insulators. Plasmonic devices and photodetectors based on topological insulators in a wide energy range, from terahertz to the ultraviolet, promise outstanding impact. Furthermore, the peculiarities, the range of applications, and the challenges of the emerging fields of topological photonics and thermo-plasmonics are discussed.

Optoelectronic devices, plasmonics, and photonics with topological insulators

Though adding a groove to a plasmonic end-coupled perfect ring (PR) resonator, two additional resonance modes, which can be controlled by the length of the groove, will arise in this proposed ring-groove (RG) joint metal-insulator-metal (MIM) waveguide. By further cascading, the PR resonator and the RG joint resonator, single and dual Fano resonances with asymmetric line shapes are obtained due to the interference effects between the dark modes and the bright modes. High figure of merit and high refractive-index sensitivity are achieved, and thus this structure is suitable for the biochemistry sensing area. Interestingly, normal and abnormal dispersions are also investigated for the Fano peaks and dips, respectively. The performances of the proposed structure are investigated by using the finite-difference time-domain method.

Fano Resonance Based on End-Coupled Cascaded-Ring MIM Waveguides Structure

Narrow-bandgap materials possess the intriguing optical-electric properties and unique structures, which can be widely applied in the field of photonics, energy optoelectronic sensing and biomedicine, etc. Nowadays, the researches on nonlinear optical properties of narrow-bandgap materials have attracted extensive attention worldwide. In this paper, we review the progress of narrow-bandgap materials from many aspects, such as background, nonlinear optical properties, energy band structure, methods of preparation, and applications. These materials have obvious nonlinear optical characteristics and the interaction with the short pulse laser excitation shows the extremely strong nonlinear absorption characteristics, which leads to the optical limiting or saturable absorption related to Pauli blocking and excited state absorption. Especially, some of these novel narrow-bandgap materials have been utilized for the generation of ultrashort pulse that covers the range from the visible to mid-infrared wavelength regions. Hence, the study on these materials paves a new way for the advancement of optoelctronics devices.

Narrow-bandgap materials for optoelectronics applications

Topological insulators (TIs), are novel two-dimension materials, which can act as effective saturable absorbers (SAs) in a fiber laser. Moreover, based on the evanescent wave interaction, deposition of the TI on microfiber would create an effective SA, which has combined advantages from the strong nonlinear optical response in TI material together with the sufficiently-long-range interaction length in fiber taper. By using this type of TI SA, various scalar solitons have been obtained in fiber lasers. However, a single mode fiber always exhibits birefringence, and hence can support two orthogonal degenerate modes. Here we investigate experimentally the vector characters of a TI SA fiber laser. Using the saturated absorption and the high nonlinearity of the TI SA, a rich variety of dynamic states, including polarization-locked dark pulses and their harmonic mode locked counterparts, polarization-locked noise-like pulses and their harmonic mode locked counterparts, incoherently coupled polarization domain wall pulses, including bright square pulses, bright-dark pulse pairs, dark pulses and bright square pulse-dark pulse pairs are all observed with different pump powers and polarization states.

/pdf/polarization-domain-wall-pulses-in-a-microfiber-based-1h7067kf5k.pdf

Polarization domain wall pulses in a microfiber-based topological insulator fiber laser

Through employing a cost-effective solvothermal method, ultrathin topological insulator (TI) bismuth telluride $(\hbox{Bi}_{2}\hbox{Te}_{3})$ nanosheets with uniform hexagonal nanostructures had been synthesized. Thanks to the uniformity of few-layer TI dispersion, we are able to adopt the drop-casting approach in order to directly transfer few-layer TI and, therefore, form a self-assembled uniform volatile TI membrane that is suitably deposited onto the end facet of an optical fiber as an effective optical saturable absorber. Its saturable absorption parameters could be deliberately tailored by thinning its thickness by mechanical exfoliation. The incorporation of the as-fabricated saturable absorber inside the fiber laser cavity allows for the operation of either a microsecond or a femtosecond pulse because different saturable absorption parameters can decide whether the fiber laser operates in the mode-locking or Q-switching state. Our work provides a convenient way of fabricating a high-quality TI membrane-based saturable absorber with promising applications for laser operation.

Drop-Casted Self-Assembled Topological Insulator Membrane as an Effective Saturable Absorber for Ultrafast Laser Photonics

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Drop-Casted Self-Assembled Topological Insulator Membrane as an Effective Saturable Absorber for Ultrafast Laser Photonics