New concept ultraviolet photodetectors

Inspired by nanoscience and nanoengineering, numerous nanostructured materials developed by multidisciplinary approaches exhibit excellent photoelectronic properties ranging from ultraviolet to terahertz frequencies. As a new class of building block, nanoscale elements in terms of quantum dots, nanowires, and nanolayers can be used for fabricating photodetectors with high performance. Moreover, in conjunction with traditional photodetectors, they exhibit appealing performance for practical applications including high density of integration, high sensitivity, fast response, and multifunction. Therefore, with the perspective of photodetectors constructed by diverse low-dimensional nanostructured materials, recent advances in nanoscale photodetectors are discussed here; meanwhile, challenges and promising future directions in this research field are proposed.

Nanostructured Photodetectors: From Ultraviolet to Terahertz.

Ultraviolet (UV) detectors have attracted considerable attention in the past decade due to their extensive applications in the civil and military fields. Wide bandgap semiconductor-based UV detectors can detect UV light effectively, and nanowire structures can greatly improve the sensitivity of sensors with many quantum effects. This review summarizes recent developments in the classification and principles of UV detectors, i.e., photoconductive type, Schottky barrier type, metal-semiconductor-metal (MSM) type, p-n junction type and p-i-n junction type. The current state of the art in wide bandgap semiconductor materials suitable for producing nanowires for use in UV detectors, i.e., metallic oxide, III-nitride and SiC, during the last five years is also summarized. Finally, novel types of UV detectors such as hybrid nanostructure detectors, self-powered detectors and flexible detectors are introduced.

Ultraviolet Detectors Based on Wide Bandgap Semiconductor Nanowire: A Review.

With large surface-to-volume ratios and Debye length comparable to their small sizes, one-dimensional inorganic nanostructures have extensively been investigated and widely used to fabricate high-performance nanoscale electronic and optoelectronic devices This feature article reviews the state-of-the-art research activities that focus on the one-dimensional inorganic nanostructures and their photodetector applications It begins with a survey of one-dimensional inorganic nanostructures and the fundamentals of photodetectors Some remarkable photoresponse characteristics are then presented, which are organized into sections covering several kinds of important nanostructures, such as ZnO, V 2 O 5 , ZnS, In 2 Se 3 , InSe, CdS, CdSe, ZnSe, Sb 2 Se 3 , ZrS 2 , Ag 2 S, and Zn x Cd 1-x Se Each section describes the corresponding photodetective properties in detail Finally, the article concludes with some perspectives and outlook on the future developments in the field

Recent Developments in One-Dimensional Inorganic Nanostructures for Photodetectors

III-Nitride nanowire optoelectronics

Nonpolar a-axial GaN nanowire (NW) was first used to construct the MSM (metal–semiconductor–metal) symmetrical Schottky contact device for application as visible-blind ultraviolet (UV) detector. Without any surface or composition modifications, the fabricated device demonstrated a superior performance through a combination of its high sensitivity (up to 104 A W−1) and EQE value (up to 105), as well as ultrafast (<26 ms) response speed, which indicates that a balance between the photocurrent gain and the response speed has been achieved. Based on its excellent photoresponse performance, an optical logic AND gate and OR gate have been demonstrated for performing photo-electronic coupled logic devices by further integrating the fabricated GaN NW detectors, which logically convert optical signals to electrical signals in real time. These results indicate the possibility of using a nonpolar a-axial GaN NW not only as a high performance UV detector, but also as a stable optical logic device, both in light-wave communications and for future memory storage.

Ultrafast, superhigh gain visible-blind UV detector and optical logic gates based on nonpolar a-axial GaN nanowire

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Ultrafast, superhigh gain visible-blind UV detector and optical logic gates based on nonpolar a-axial GaN nanowire