New concept ultraviolet photodetectors

Ultraviolet (UV) radiation has a variety of impacts including the health of humans, the production of crops, and the lifetime of buildings. Based on the photovoltaic effect, self-powered UV photode...

Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga2O3 pn Junction.

Photoelectric detectors are the central part of modern photodetection systems with numerous commercial and scientific applications. p-Type semiconductor materials play important roles in optoelectronic devices. Photodetectors based on p-type semiconductor materials have attracted a great deal of attention in recent years because of their unique properties. Here, a comprehensive summary of the recent progress mainly on photodetectors based on inorganic p-type semiconductor materials is presented. Various structures, including photoconductors, phototransistors, homojunctions, heterojunctions, p-i-n junctions, and metal-semiconductor junctions of photodetectors based on inorganic p-type semiconductor materials, are discussed and summarized. Perspectives and an outlook, highlighting the promising future directions of this research field, are also given.

Photoelectric Detectors Based on Inorganic p-Type Semiconductor Materials.

High-performance solar-blind (200–280 nm) avalanche photodetectors (APDs) were fabricated based on highly crystallized ZnO–Ga2O3 core–shell microwires. The responsivity can reach up to 1.3 × 103 A/W under −6 V bias. Moreover, the corresponding detectivity was as high as 9.91 × 1014 cm·Hz1/2/W. The device also showed a fast response, with a rise time shorter than 20 μs and a decay time of 42 μs. The quality of the detectors in solar-blind waveband is comparable to or even higher than that of commercial Si APD (APD120A2 from Thorlabs Inc.), with a responsivity ∼8 A/W, detectivity ∼1012 cm·Hz1/2/W, and response time ∼20 ns. The high performance of this APD make it highly suitable for practical applications as solar-blind photodetectors, and this core–shell microstructure heterojunction design method would provide a new approach for realizing an APD device.

Solar-Blind Avalanche Photodetector Based On Single ZnO–Ga2O3 Core–Shell Microwire

Self-powered solar-blind photodetectors based on diamond/β-Ga2O3 heterojunctions have been fabricated. Under zero bias, these photodetectors show a peak responsivity of 0.2 mA W−1, and a sharp cutoff wavelength of 270 nm. The UV/visible rejection ratio is more than two orders of magnitude, indicating that these photodetectors respond mainly to solar-blind irradiation. These photodetectors can exhibit repeatability and stability without any external power supply. High quality images have been obtained using such a self-powered photodetector as a sensing pixel of an imaging system, and this study is the first report on the solar-blind imaging of Ga2O3 based photodetectors.

Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging

Self-powered, highly spectrum-selective photodetectors have been fabricated from n-ZnO/p-NiO core–shell nanowire arrays. In the structure, the outer-layer of the p-NiO acts as a “filter” which can filter out the photons with short wavelength. In this way, highly spectrum-selective photodetectors that only respond to a narrow spectrum range have been obtained.

Self-powered spectrum-selective photodetectors fabricated from n-ZnO/p-NiO core–shell nanowire arrays

Zinc oxide (ZnO) nanocolumns have been prepared by a metal-organic chemical vapor deposition technique, and structural and optical characterization reveal that the nanocolumns have high crystalline and luminescent qualities. Au/MgO/ZnO/In structured Schottky diodes have been fabricated from the nanocolumns. An intense emission can be detected from the diodes under the drive of bias voltage, and the output power can reach 3.7 mu W. The intense emission comes from both the high crystalline and luminescent qualities of the ZnO nanocolumns, and the ideal Schottky contact formed in the Au/MgO/ZnO/In structures.

Intense emission from ZnO nanocolumn Schottky diodes.

The invention provides an atomic layer deposition apparatus employing a uniform air intake system, and relates to atomic layer deposition apparatuses The objective of the invention is to solve the problem of low deposition efficiency in the prior art caused by poor uniformity of contact between a precursor and a substrate or an upper atomic layer, a low utilization rate of reactants and a long growth period of materials The apparatus comprises a reaction chamber, a first precursor container, a second precursor container, an auxiliary sweeping gas container, a first gas supply pipeline, a second gas supply pipeline, an auxiliary sweeping gas supply pipeline, a uniform air intake system, a chamber cover, etc, wherein, the first gas supply pipeline, the second gas supply pipeline and the auxiliary sweeping gas supply pipeline are respectively connected with the first precursor container, the second precursor container and the auxiliary sweeping gas container, the first gas supply pipeline and the second gas supply pipeline respectively communicate with the uniform air intake system in the reaction chamber through the chamber cover of the reaction chamber, and the uniform air intake system is fixed at the lower part of the chamber cover The apparatus meets scientific research and production needs

Atomic layer deposition apparatus employing uniform air intake system

Well-aligned ZnO nanowires have been prepared on sapphire substrate, and structural and optical characterizations indicate that the nanowires are of single crystalline and have relatively high luminescent quality. By employing the ZnO nanowires as an active layer, p-Zn0.68Mg0.32O:N/n-ZnO nanowire heterostructure light-emitting devices (LEDs) have been fabricated. The LEDs show pure ultraviolet emission when a forward bias is applied, while the deep-level emission frequently observed in ZnO p-n junctions is almost totally invisible. The devices can work continuously for over 27 h under the injection of a current density of 500 mA/cm(2), indicating their good stability. (C) 2014 Optical Society of America

Pure ultraviolet emission from ZnO nanowire-based p-n heterostructures

Vertically aligned ZnO nanowires have been prepared, and structural characterization shows that the nanowires have relatively high crystalline quality. The dominant free exciton emission and the appearance of B-type exciton emissions at low temperatures reveal the high optical quality of the nanowires. Au–MgO–ZnO nanowire structures have been constructed, and random lasing has been observed from the structure under the injection of continuous current.

Electrically pumped random lasers fabricated from ZnO nanowire arrays.

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