Molecular simulation of the plastic deformation and crack formation in single grit grinding of 4H-SiC single crystal

Material removal and interactions between an abrasive and a SiC substrate: A molecular dynamics simulation study

Electrochemical jet-assisted precision grinding of single-crystal SiC using soft abrasive wheel

Lapping is one of the standard essential methods to realise the global planarization of SiC and other semiconductor substrates. It is necessary to deeply study the mechanism to obtain SiC lapping process parameters with a strong comprehensive lapping performance (i.e., high material removal rate (MRRm), small surface roughness (Ra), and low total thickness variation (TTV)). The effects of the lapping process parameters and their interactions on lapping performance for SiC were investigated using orthogonal experiments; the effects on the MRRm, Ra, TTV, and optimal parameters under the conditions of a single evaluation index were investigated using intuitive analysis (range analysis, variance analysis, and effect curve analysis). The entropy value method and grey relational analysis were used to transform the multi-evaluation-index optimisation into a single-index optimisation about the grey relational grade (GRG) and to comprehensively evaluate the lapping performance of each process parameter. The results showed that the lapping plate types, abrasive size, and their interaction effect had the most significant effects on MRRm and Ra, with a contribution of over 85%. The interaction between the lapping plate types and abrasive size was also found to have the most significant effect on TTV, with a contribution of up to 51.07%. As the lapping plate's hardness and abrasive size increased, the MRRm and Ra also gradually increased. As the lapping normal-pressure increased, MRRm increased, Ra gradually decreased, and TTV first decreased and then increased. MRRm, Ra, and TTV first increased and then decreased with increasing abrasive concentration. Compared to the optimisation results obtained by intuitive analysis, the process parameter optimised by the grey relational analysis resulted in a smooth surface with an MRRm of 90.2 μm/h, an Ra of 0.769 nm, and a TTV of 3 μm, with a significant improvement in the comprehensive lapping performance. This study reveals that a combination of orthogonal experiments and grey relational analysis can provide new ideas for optimising the process parameters of SiC.

Optimisation of Lapping Process Parameters for Single-Crystal 4H-SiC Using Orthogonal Experiments and Grey Relational Analysis.

Polishing SiC is a difficult task due to its exceptional chemical stability and high hardness. While the strong catalytic performance resulting from the coupling effect of ultrasonic vibration and catalysis is well-known, there have been limited studies on its effectiveness for SiC chemical mechanical polishing. To address this gap, we present a novel approach that utilizes the coupling of ultrasonic vibration and catalysis for SiC polishing. The hydroxyl free radical (*OH) generated by coupling effect is analyzed using ultraviolet-visible spectrophotometry (UV–VIS) to screen for a catalyst that matches ultrasonic vibration and establish a high-performance catalytic coupling system. The use of ultrasonic vibration in SiC polishing results in a significant increase in catalytic efficiency, with a doubling effect observed. Additionally, the catalyst itself increases ultrasonic efficiency by 43.1 %, leading to a substantial improvement in material removal rate (MRR). We study the impact of the placement of the ultrasonic vibration device on MRR and evaluate the performance of the coupling system used for polishing. Also, we delved into the removal mechanism of SiC by utilizing XPS and nyquist plots. Our findings reveal a maximum MRR of 214.6 nm/h, which improves the efficiency of commercial slurry by 80.0 %. Furthermore, the proposed strategy increases the MRR of commercial slurry by more than 70 % in the time range of 0–1 h, 1–2 h, and 0–2 h. The surface roughness (Ra) measured by AFM using a scanning area of 1 × 1 µm2 at sub-angstrom scale (Ra=0.0627 nm) is achieved. This study significantly improves the polishing efficiency of commercial slurry and has great application prospects. 

Chemical mechanical polishing of silicon carbide (SiC) based on coupling effect of ultrasonic vibration and catalysis

Experimental investigation on the ultrasonically assisted single-sided lapping of monocrystalline SiC substrate

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Experimental investigation on the ultrasonically assisted single-sided lapping of monocrystalline SiC substrate