Xin Wang
South China Normal University
12 Papers
28 Citations
Xin Wang is an academic researcher from South China Normal University. The author has contributed to research in topics: Quantum efficiency & Superlattice. The author has an hindex of 4, co-authored 12 publications.
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Papers
Enhancing luminescence in all-inorganic perovskite surface plasmon light-emitting diode by incorporating Au-Ag alloy nanoparticle
TL;DR: In this article, the localized surface plasmon enhanced luminescence behaviors of a radiating dipole in an all-inorganic perovskite light-emitting diode (PeLED) by incorporating a gold (Au)-silver (Ag) alloy nanoparticle (NP) in the electronic transport layer are demonstrated.
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Improvement of AlGaN-based deep ultraviolet light-emitting diodes by using a graded AlGaN superlattice hole reservoir layer
Xin Wang,Huiqing Sun,Zhiyou Guo +2 more
TL;DR: In this paper, the AlGaN-based deep ultraviolet light emitting diodes (DUV-LEDs) with a graded superlattice hole reservoir layer (HRL) can significantly enhance hole injection efficiency, compared with the traditional LED.
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[INVITED] Special AlGaN graded superlattice hole and electron blocking layers improved performance of AlGaN-based ultraviolet light-emitting diodes
TL;DR: In order to improve the electrical and optical performance of ultraviolet light emitting diodes (UV-LEDs), Al0.65Ga0.35N/AlxGa1-xN graded superlattice electron blocking layers (GS-EBLs) are applied to the traditional AlGaN-based UV-LED as discussed by the authors.
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Efficiency enhancement in AlGaN deep ultraviolet light-emitting diodes by adjusting Mg doped staggered barriers
Sun Jie,Huiqing Sun,Yi Xinyan,Yang Xian,Tianyi Liu,Xin Wang,Xiu Zhang,Xuancong Fan,Zhang Zhuding,Zhiyou Guo +9 more
TL;DR: In this article, the energy band diagrams, internal quantum efficiency, total output power and radiative recombination rate are investigated by APSYS software, and the simulation results show that the structure with p-doped staggered barriers has higher efficiency and power due to enhancement of the holes' injection and the electrons' confinement.
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Performance enhancement of AlGaN-based UV-LEDs inserted with a pin-doped AlGaN layer between the active region and electron-blocking layer
Xin Wang,Huiqing Sun,Yang Xian,Yi Xinyan,Sun Jie,Xiu Zhang,Tianyi Liu,Zhiyou Guo,Ling-Zhi Zhao +8 more
TL;DR: In this article, an AlGaN-based deep ultraviolet light-emitting diodes with an Mg-Si pin-doped layer inserted, between the active region and electron blocking layer, have been systematically investigated by APSYS software.
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