Sulfate crystals are often criticized for their low birefringence. The small anisotropic SO4 group is becoming the biggest bottleneck hindering the application of sulfates in optical functional materials. In this study, we report a new method to significantly enhance the birefringence of sulfates. The title compound increases the birefringence recording of sulfates to 0.542@546 nm, which is significantly larger than that of the commercial birefringent crystal of TiO2 (0.306@546.1 nm). At the infrared wavelength, the birefringence of Hg4(Te2O5)(SO4) can be up to 0.400@1064 nm, which is also much larger than the infrared birefringent crystal of YVO4 (0.209@1064 nm). In addition, it also has a wide transparency range, high thermal stability, and excellent environmental stability, making it a potential birefringent material. Hg4(Te2O5)(SO4) features a novel two-dimensional layered structure composed of [Hg4(Te2O5)]2+ layers separated by isolated (SO4)2- tetrahedra. This compound was designed by introducing a highly selective cation in a tellurite sulfate system. The low valence low coordination cations connect with tellurite groups only, making the sulfate isolated in the structure. The steric repulsive action of the isolated SO4 tetrahedra may regulate the linear and lone pair groups arranged in a way that favors large birefringence. This method can be proven by theoretical calculations. PAWED studies showed that the large birefringence originated from the synergistic effect of (Hg2O2)2-, (Te2O5)2-, and (SO4)2- units, with a contribution ratio of 42.17, 37.92, and 19.88%, respectively. Our work breaks the limitation of low birefringence in sulfates and opens up new possibilities for their application as birefringent crystals.

Hg4(Te2O5)(SO4): A Giant Birefringent Sulfate Crystal Triggered by a Highly Selective Cation.

Planar MO3 (M=B, C, N) units have frequently been considered as the important structural components of novel birefringent crystal materials. An efficient approach for creating new functional crystals is to...

An Effective Pathway to Design and Synthesize UV Birefringent Crystals via Rational Assemble of π-Conjugated [CO3]2− and [NO3]− Triangles

Synthesis and characteristics of a monocrystalline GaAs/β-Ga2O3 p-n heterojunction

Herein, the first lead tellurium borate, PbTeB4O9, with an unprecedented fundamental building block [B4O10] was successfully synthesized. The near-parallel alignment of [B4O10] groups and [TeO3] polyhedra resulted in a high birefringence (0.099@1064 nm). The structure-property relationship was discussed by using the first-principles calculations.

PbTeB4O9: A Lead Tellurium Borate with Unprecedented Fundamental Building Block [B4O10] and Large Birefringence

Si/AlN p-n heterojunction interfaced with ultrathin SiO2

Ba2Zn2B6O13: coplanar [B2O5] in unnoted U-shaped [B6O13] groups achieving large birefringence.

The beta-Ga2O3 has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in beta-Ga2O3 has hindered the development of Ga2O3-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type beta-Ga2O3 can face severe challenges in further advancing the beta-Ga2O3 bipolar devices due to their unfavorable band alignment and the poor p-type oxide crystal quality. In this work, we applied the semiconductor grafting approach to fabricate monocrystalline Si/beta-Ga2O3 p-n diodes for the first time. With enhanced concentration of oxygen atoms at the interface of Si/beta-Ga2O3, double side surface passivation was achieved for both Si and beta-Ga2O3 with an interface Dit value of 1-3 x 1012 /cm2 eV. A Si/beta-Ga2O3 p-n diode array with high fabrication yield was demonstrated along with a diode rectification of 1.3 x 107 at +/- 2 V, a diode ideality factor of 1.13 and avalanche reverse breakdown characteristics. The diodes C-V shows frequency dispersion-free characteristics from 10 kHz to 2 MHz. Our work has set the foundation toward future development of beta-Ga2O3-based transistors.

Monocrystalline Si/\b{eta}-Ga2O3 p-n heterojunction diodes fabricated via grafting

Zero-order waveplates are widely used in the manufacture of laser polarizer waves, which are important in polarimetry and the laser industry. However, there are still challenges in designing deep-ultraviolet (DUV) waveplate materials that satisfy large band gaps and small optical anisotropy simultaneously. Herein, three cases of aluminum sulfate fluorides: Na2AlSO4F3, Li4NH4Al(SO4)2F4, and Li6K3Al(SO4)4F4, with novel [AlSO4F3] layers or isolated [AlS2O8F4] trimers were designed and synthesized by the rational assembly of [AlO2F4] and [SO4] groups through a hydrothermal method. Experiments and theoretical calculations imply that these three possess short cutoff edges (λ < 200 nm) and small birefringence (0.0014-0.0076 @ 1064 nm), which fulfils the prerequisite for potential DUV zero-order waveplate materials. This work extends the exploration of DUV zero-order waveplate materials to the aluminum sulfate fluoride systems.

Design of Deep-Ultraviolet Zero-Order Waveplate Materials by Rational Assembly of [AlO2F4] and [SO4] Groups.

A Ga-enriched ternary alkali-metal sulfide Na4Ga8S14 has been synthesized by a high temperature solid-state reaction. It crystallizes in the centrosymmetric Pbca (no. 61) space group with cell parameters a = 13.5260(4) Å, b = 11.4979(3) Å, c = 29.9592(9) Å, and Z = 8, and exhibits a three-dimensional (3D) network structure constructed from unique [Ga12S42] 12-membered rings, one-dimensional ∞[Ga4S11] chains, individual [GaS4] units and Na+ ions. The experimental band gap of Na4Ga8S14 was measured as ∼3.57 eV. Theoretical calculations indicate that the title compound is a direct band gap compound and the band gap is mainly determined by [GaS4] units. Meanwhile, statistical analysis shows that the atomic ratio N (N = AIAII/Ga, where AI = alkali-metal, AII = alkaline earth-metal) can be used to regulate the connection of [GaS4] units from zero-dimensional (0D) isolated groups, one-dimensional (1D) chains, and two-dimensional (2D) layers to 3D frameworks in Ga-containing alkali- and/or alkaline earth-metal chalcogenides. The results enrich the diversity of alkali-metal sulfides and give an insight into the structural regulation of alkali- and/or alkaline earth-metal chalcogenides.

Na4Ga8S14: a Ga-enriched wide band gap ternary alkali-metal sulfide with unique [Ga12S42] 12-membered rings.

Flexible CoFe
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Ba2Zn2B6O13: coplanar [B2O5] in unnoted U-shaped [B6O13] groups achieving large birefringence.

Monocrystalline Si/\b{eta}-Ga2O3 p-n heterojunction diodes fabricated via grafting

Design of Deep-Ultraviolet Zero-Order Waveplate Materials by Rational Assembly of [AlO2F4] and [SO4] Groups.

Na4Ga8S14: a Ga-enriched wide band gap ternary alkali-metal sulfide with unique [Ga12S42] 12-membered rings.

Flexible CoFe <sub>2</sub> O <sub>4</sub> /MXene-Derived CoFe/Fe <sub>3</sub> O <sub>4</sub> /TiO <sub>2</sub>