The accurate and rapid sensing of NH3 at room temperature is a challenging conundrum for daily life and environment protection. In this work, we have explored an intriguing material, hollow NiO sphere composited with polyaniline (labelled as h-NiO-PANI) for NH3 gas sensing, fabricated by growing PANI on the hollow NiO sphere derived from solvothermal synthesis and calcination. Ni-Cu glycerate is obtained via solvothermal synthesis, which is a universal way to produce uniform glycerate microspheres. During calcination, the hollow sphere is ingeniously designed by taking advantage of the outward adhesion from CuO to the inner core. Polymerization of aniline on the hollow spheres is beneficial for large specific surface area and gas adsorption. Impressively, the sensor based on h-NiO-PANI exhibits favorable response to NH3 (ΔR/R0=43 % for 10 ppm, 149 s in response and 257 s in recovery), which is greatly better than the counterparts (NiO-PANI and PANI). Moreover, the sensor has also shown superb anti-interference against common volatile organic compounds (VOCs), water and humidity, along with the superior repeatability in 5 cycles and long-term stability in a week, manifesting the sensor a promising candidate in daily application. The enhanced gas sensing performance is attributed to the hollow structure and construction of p-p heterojunctions between NiO and PANI.

Design and preparation of hollow NiO sphere- polyaniline composite for NH3 gas sensing at room temperature

Rapid progress in the synthesis and fundamental understanding of 1D and 2D materials have solicited the incorporation of these nanomaterials into sensor architectures, especially field effect transistors (FETs), for the monitoring of gas and vapor in environmental, food quality, and healthcare applications. Yet, several challenges have remained unaddressed toward the fabrication of 1D and 2D FET gas sensors for real-field applications, which are related to properties, synthesis, and integration of 1D and 2D materials into the transistor architecture. This review paper encompasses the whole assortment of 1D-i.e., metal oxide semiconductors (MOXs), silicon nanowires (SiNWs), carbon nanotubes (CNTs)-and 2D-i.e., graphene, transition metal dichalcogenides (TMD), phosphorene-materials used in FET gas sensors, critically dissecting how the material synthesis, surface functionalization, and transistor fabrication impact on electrical versus sensing properties of these devices. Eventually, pros and cons of 1D and 2D FETs for gas and vapor sensing applications are discussed, pointing out weakness and highlighting future directions.

1D and 2D Field Effect Transistors in Gas Sensing: A Comprehensive Review.

Nanowire-based technological advancements thrive in various fields, including energy generation and storage, sensors, and electronics. Among the identified nanowires, silicon nanowires (SiNWs) attract much attention as they possess unique features, including high surface-to-volume ratio, high electron mobility, bio-compatibility, anti-reflection, and elasticity. They were tested in domains of energy generation (thermoelectric, photo-voltaic, photoelectrochemical), storage (lithium-ion battery (LIB) anodes, super capacitors), and sensing (bio-molecules, gas, light, etc). These nano-structures were found to improve the performance of the system in terms of efficiency, stability, sensitivity, selectivity, cost, rapidity, and reliability. This review article scans and summarizes the significant developments that occurred in the last decade concerning the application of SiNWs in the fields of thermoelectric, photovoltaic, and photoelectrochemical power generation, storage of energy using LIB anodes, biosensing, and disease diagnostics, gas and pH sensing, photodetection, physical sensing, and electronics. The functionalization of SiNWs with various nanomaterials and the formation of heterostructures for achieving improved characteristics are discussed. This article will be helpful to researchers in the field of nanotechnology about various possible applications and improvements that can be realized using SiNW.

Advances in silicon nanowire applications in energy generation, storage, sensing, and electronics: a review

Abstract Quasi‐1D silicon nanowires (SiNWs) field effect transistors (FETs) integrated upon large‐area elastomers are advantageous candidates for developing various high‐performance stretchable electronics and displays. In this work, it is demonstrated that an orderly array of slim SiNW channels, with a diameter of <80 nm, can be precisely grown into desired locations via an in‐plane solid‐liquid‐solid (IPSLS) mechanism, and reliably batch‐transferred onto large area polydimethylsiloxane (PDMS) elastomers. Within an optimized discrete FETs‐on‐islands architecture, the SiNW‐FETs can sustain large stretching strains up to 50% and repetitive testing for more than 1000 cycles (under 20% strain), while achieving a high hole carrier mobility, I on/I off current ratio and subthreshold swing (SS) of ≈70 cm2 V−1 s−1, >105 and 134 ‐ 277 mV decade−1, respectively, working stably in an ambient environment over 270 days without any passivation protection. These results indicate a promising new routine to batch‐manufacture and integrate high‐performance, scalable and stretchable SiNW‐FET electronics that can work stably in harsh and large‐strain environments, which is a key capability for future practical flexible display and wearable electronic applications.

https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/advs.202105623

Highly Stretchable High‐Performance Silicon Nanowire Field Effect Transistors Integrated on Elastomer Substrates

Detection and recognition of chemical and biological species via sensor electronics are important not only for various sensing applications but also for fundamental scientific understanding. In the past two decades, sensor devices using one-dimensional (1D) nanowires have emerged as promising and powerful platforms for electrical detection of chemical species and biologically relevant molecules due to their superior sensing performance, long-term stability, and ultra-low power consumption. This paper presents a comprehensive overview of the recent progress and achievements in 1D nanowire synthesis, working principles of nanowire-based sensors, and the applications of nanowire-based sensor electronics in chemical and biological analytes detection and recognition. In addition, some critical issues that hinder the practical applications of 1D nanowire-based sensor electronics, including device reproducibility and selectivity, stability, and power consumption, will be highlighted. Finally, challenges, perspectives, and opportunities for developing advanced and innovative nanowire-based sensor electronics in chemical and biological applications are featured.

Nanowire-based sensor electronics for chemical and biological applications

Toxic gas monitoring at room temperature (RT) is of great concern to public health and safety, where ultrathin silicon nanowires (SiNWs), with diameter <80 nm, are ideal one-dimensional candidates to achieve high-performance field-effect sensing. However, a precise integration of the tiny SiNWs as active gas sensor channels has not been possible except for the use of expensive and inefficient electron beam lithography and etching. In this work, we demonstrate an integratable fabrication of field-effect sensors based on orderly SiNW arrays, produced via step-guided in-plane solid-liquid-solid growth. The back-gated SiNW sensors can be tuned into suitable subthreshold detection regime to achieve an outstanding field-effect sensitivity (75.8% @ 100 ppm NH3), low detection limit (100 ppb), and excellent selectivity to NH3 gas at RT, with fast response/recovery time scales (Tres/Trec) of 20 s (at 100 ppb NH3) and excellent repeatability and high stability over 180 days. These outstanding sensing performances can be attributed to the fast charge transfer between adsorbed NH3 molecules and the exposed SiNW channels, indicating a convenient strategy to fabricate and deploy high-performance gas detectors that are widely needed in the booming marketplace of wearable or portable electronics.

Highly Sensitive Ammonia Gas Detection at Room Temperature by Integratable Silicon Nanowire Field-Effect Sensors.

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Highly Sensitive Ammonia Gas Detection at Room Temperature by Integratable Silicon Nanowire Field-Effect Sensors.