Xiaofeng Chen
5 Papers
15 Citations
Xiaofeng Chen is an academic researcher. The author has contributed to research in topics: Light-emitting diode & Electronic band structure. The author has an hindex of 4, co-authored 5 publications.
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Papers
Stress and dislocation control of GaN epitaxial films grown on Si substrates and their application in high-performance light-emitting diodes
Yuan Li,Wenliang Wang,Xiaochan Li,Liegen Huang,Zhiting Lin,Zheng Yulin,Xiaofeng Chen,Guoqiang Li +7 more
TL;DR: In this article, a step-graded AlGaN buffer layer was designed to grow GaN epitaxial films on Si substrates to solve the problem of high-density dislocations and cracks of GaN-based LEDs.
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Performance-improved vertical GaN-based light-emitting diodes on Si substrates through designing the epitaxial structure
Wenliang Wang,Li Yuan,Zheng Yulin,Yang Zhichao,Zhiting Lin,Xiaofeng Chen,Zhenya Lu,Guoqiang Li +7 more
TL;DR: In this article, a performance-improved vertical GaN-based light-emitting diodes (LEDs) have been fabricated on Si substrates through designing the epitaxial structures with a combination of an AlN interlayer and a SiNx interlayer.
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Influence of Thickness of p-InGaN Layer on the Device Physics and Material Qualities of GaN-Based LEDs With p-GaN/ InGaN Heterojunction
TL;DR: In this paper, the influence of the thickness of a p-InGaN layer on the device physics and the material qualities of GaN-based light-emitting diodes (LEDs) are investigated in both numerical and experimental ways.
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High-efficiency near-UV light-emitting diodes on Si substrates with InGaN/GaN/AlGaN/GaN multiple quantum wells
Yuan Li,Xing Zhiheng,Zheng Yulin,Tang Xin,Wentong Xie,Xiaofeng Chen,Wenliang Wang,Guoqiang Li +7 more
TL;DR: In this article, a GaN interlayer barrier is proposed to increase the concentration and the spatial overlap of carriers in the MQWs for modulating the energy band and polarization theoretically.
High-performance vertical GaN-based near-ultraviolet light-emitting diodes on Si substrates
Yuan Li,Wenliang Wang,Liegen Huang,Zheng Yulin,Xiaochan Li,Tang Xin,Wentong Xie,Xiaofeng Chen,Guoqiang Li +8 more
TL;DR: In this paper, high performance vertical GaN-based near-ultraviolet (UV) light-emitting diodes (LEDs) on Si substrates with an electroluminescence emission wavelength of 395 nm have been fabricated by designing epitaxial structures to reduce the dislocation density and enhance the electron confinement and hole injection.