Xiaodi Wei
Hubei University
4 Papers
30 Citations
Xiaodi Wei is an academic researcher from Hubei University. The author has contributed to research in topics: Resistive random-access memory & Voltage. The author has an hindex of 4, co-authored 4 publications.
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Papers
Role of Oxygen Vacancies at the TiO2/HfO2 Interface in Flexible Oxide-Based Resistive Switching Memory
Abstract: Flexible memory is highly desirable for data storage in portable wearable electronics. Here, a flexible bilayer TiO2/HfO2‐architecture‐based resistive random access memory (RRAM) is fabricated a on polyethylene naphthalate (PEN) substrate, and exhibits outstanding uniformity, high durability, and excellent mechanical flexibility. The coefficients of variations for high and low resistance state are ≈3.2% and ≈3%, respectively. No performance degradation is observed under mechanical stress with bending radius ranging from 70 to 10 mm. Interestingly, the performance degradation after long‐term stability tests can be recovered. An asymmetric hourglass‐shaped oxygen vacancy (Vo) distribution at the HfO2/TiO2 interface plays a key role in high performance of this flexible RRAM device. The proposed flexible RRAM devices have potential applications in wearable electronics.
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Exploring the role of nitrogen incorporation in ZrO2 resistive switching film for enhancing the device performance
Xiaodi Wei,Hong Huang,Cong Ye,Cong Ye,Wei Wei,Wei Wei,Hao Zhou,Yong Chen,Rulin Zhang,Li Zhang,Qing Xia +10 more
TL;DR: The role of nitrogen doping on the resistive switching performance in nitrogen doped ZrO2 memristive device is investigated in this paper, where the authors theoretically calculate the formation energy (Evf), migration energy (Em), and density of states for oxygen vacancy (VO).
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Exploration of highly enhanced performance and resistive switching mechanism in hafnium doping ZnO memristive device
Li Zhang,Hong Huang,Cong Ye,Cong Ye,Kuan-Chang Chang,Rulin Zhang,Qing Xia,Xiaodi Wei,Wei Wei,Wei Wei,Wenfeng Wang +10 more
Abstract: 1 × 1 μm2 via hole structure ZnO-based resistive random access memory cells are fabricated and the resistive switching behavior is investigated. It can be found that with 5.7% hafnium-doped ZnO film, the memory cell shows remarkable 108 pulse endurance. An ON/OFF resistance ratio of at least two orders of magnitude is achieved and the resistive states can remain stable up to 104 s. In contrast, a Pt/ZnO/TiN control device presents an unstable resistive switching characteristic and endurance degradation. Compared with pure ZnO film, Hf-doped ZnO film has a relatively smoother surface and larger band gap. X-ray photoelectron spectroscopy analysis indicates that the Hf-doped element induces more non-lattice oxygen ions in the ZnO switching layer. We deduce that the conductive filament forms/ruptures in a fixed path along the Hf atoms. Based on I–V curve fitting and temperature-dependent current measurements, the Pt/Hf:ZnO/TiN device is demonstrated as a Schottky conduction mechanism, which shows reasonable agreement with the possible resistive switching mechanism in the hafnium-doped ZnO memristive device.
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Effect of sputtering atmosphere on the characteristics of ZrOx resistive switching memory
Pin He,Cong Ye,Cong Ye,Jiaji Wu,Wei Wei,Xiaodi Wei,Hao Wang,Rulin Zhang,Rulin Zhang,Li Zhang,Li Zhang,Qing Xia,Qing Xia,Hanbin Wang +13 more
TL;DR: In this article, a ZrOx switching layer with different oxygen content for TiN/ZrOx/Pt resistive switching (RS) memory was prepared by magnetron sputtering in different atmospheres such as N2/Ar mixture, O2/AR mixture as well as pure Ar. The morphology, structure and RS characteristics were systemically investigated and it was found that the RS performance is highly dependent on the sputtering atmosphere.
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