Xiaodan Wang
Suzhou University of Science and Technology
14 Papers
26 Citations
Xiaodan Wang is an academic researcher from Suzhou University of Science and Technology. The author has contributed to research in topics: Cathodoluminescence & Luminescence. The author has an hindex of 5, co-authored 14 publications. Previous affiliations of Xiaodan Wang include Soochow University (Suzhou).
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Papers
Investigation of energy transfer mechanism in Er3+ and Tm3+ doped AlN crystalline films
TL;DR: In this paper, the optical and structural properties of the samples were characterized by cathodoluminescence and X-ray diffraction, respectively, and all samples were annealed after ion-implantation.
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Effects of Eu ions dose and annealing temperature on the structural and optical properties of Eu-implanted AlN thin films
TL;DR: In this paper, a series of Eu-implanted AlN films with different Eu ions dose and different annealing temperature were prepared, and the crystalline quality of the Eu implanted AlN has been explored by X-ray diffraction and Raman scattering.
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Effects of Ce3+ energy level structure on absorption and luminescence properties of Ce-doped YAlO3, Y3Al5O12, and LaAlO3 single crystals
TL;DR: In this paper, the spectra and scintillation properties of YAlO3, Y3Al5O12, and YAlAlO12 were investigated, and it was shown that the excitation spectrum is very similar with the absorption spectrum.
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Comparison of morphology, structure and optical properties of GaN powders prepared by Ga2O3 nitridation and gallium nitridation
Xionghui Zeng,Baixiang Han,Xiaodan Wang,Jianping Shi,Yu Xu,Jicai Zhang,Jianfeng Wang,Jinping Zhang,Ke Xu +8 more
TL;DR: In this paper, two kinds of GaN powders were grown using the chemical vapor transport process, which involved different Ga sources, i.e., Ga2O3 and Ga metal.
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Luminescence properties and energy transfer mechanism of Eu3+ and Tm3+ Co-doped AlN thin films
Hai Ma,Xiaodan Wang,Feifei Chen,Jiafan Chen,Xionghui Zeng,Xiaodong Gao,Dan Wang,Hongmin Mao,Ke Xu +8 more
TL;DR: Eu3+, Tm3+ co-doped AlN thin films have been prepared through ion implantation for the first time as mentioned in this paper, and implanted samples were annealed at 1180°C in N2 to recover implantation damages and activate the rare-earth ions.
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