Xiaobin Zhang

TL;DR: In this paper, a p-i-n type InGaN quantum dot solar battery structure is described, which comprises a substrate, a low-temperature gallium nitride nucleation layer, a non-intentionally doped gallium oxide buffer layer, an n-type doped InxGal-xN layer and a nondoped i layer.

TL;DR: In this paper, a flip-chip double-junction indium gallium nitride solar battery structure is described, which comprises a substrate, a gallium-nitride nucleating layer produced on the substrate, an unintentional doped gallium n-oxide buffer layer, an n-type doped InaGa N layer, a p-type heavily-doped InbGa n layer, and a p type doped IncGa n-layer.

TL;DR: In this paper, a single-junction InGaN solar cell structure is characterized in which the structure comprises a substrate, a low-temperature GaN nucleation layer fabricated on the substrate to increase the nucleation density of the substrate surface, an unintentionally doped GaN buffer layer fabricated in the substrate layer for reducing the defect density of an epitaxial layer and improving the crystal quality, and an n-type doped InxGa1-xN p-n junction.

TL;DR: In this article, a method of growing an indium-nitride monocrystal film is described in which the following steps are included: first, an underlay is selected; secondly, a nucleating layer is grown on the underlay by adopting the metallorganic chemical vapour deposition technique.