The invention discloses an interlayer structure nuclear battery based on a liquid semiconductor and a preparation method of the interlayer structure nuclear battery. The interlayer structure nuclear battery comprises a substrate, a metal layer, a liquid semiconductor, an insulating material, a radioactive metal and a non-radioactive metal, wherein the radioactive metal and the non-radioactive metal are in an integral structure, and the radioactive metal is arranged at the middle part of the non-radioactive metal; the insulating material, the metal layer and the substrate are sequentially arranged on the upper and lower surfaces of the integral structure from the near to the distant, the insulating material is in a hollow structure, and the liquid semiconductor is arranged in a hollow cavity of the insulating material; the radioactive metal and the liquid semiconductor form Schottky contact or ohmic contact, and the metal layer and the liquid semiconductor form ohmic contact or Schottky contact. According to the interlayer structure nuclear battery and the preparation method, the problems that the semiconductor is subjected to serious radiation damage and the service life of a battery is too short are solved, the liquid semiconductor and a radioactive source type isotopic source with long service life are utilized and an interlayer structure is designed to comprehensively improve the output performance of the battery and improve the application value of the battery.

Interlayer structure nuclear battery based on liquid semiconductor and preparation method thereof

The invention discloses a parallel type PIN type beta irradiation battery and a preparing method thereof to mainly solve the problems that a current nuclear battery is low in energy converting ratio and output power. The parallel type PIN type beta irradiation battery comprises an upper PIN junction, a lower PIN junction and beta irradiation sources, wherein the upper PIN junction and the lower PIN junction are connected in parallel. The lower PIN junction comprises an N type ohmic contact electrode, an N type highly-doped 4H-SiC substrate, an N type lightly-doped epitaxial layer, a P type highly-doped epitaxial layer and a P type ohmic contact electrode from bottom to top in sequence, the top-to-bottom structural distribution of the PIN junction is the same as the bottom-to-top structural distribution of the lower PIN junction, a plurality of grooves are formed in each PIN junction, and the beta irradiation sources are placed in the grooves respectively. The two PIN junctions make contact with each other through the P type ohmic contact electrode, and the upper groove and the lower groove are in mirror symmetry and are communicated with each other. The parallel type PIN type beta irradiation battery has the advantages that the contact area between the irradiation sources and a semiconductor is large, the nuclear raw material utilization rate and the energy collection rate are high, and the output voltage of the battery is large, and the battery can provide power for a miniature circuit continuously or can provide power for polar regions, deserts and other areas.

Parallel type PIN type alpha irradiation battery and preparing method thereof

The invention discloses a thermonuclear electric cell so as to solve the limit problem of long discharging time of a common cell, and belongs to the field of new energy industry. According to a solution, in the aspect of receiving of tritium gas radiation energy, a liquid buffer is adopted to enhance the electron receiving ability by a silicon wafer, impact on the silicon wafer by electrons is reduced, and inner material is more durable, and the etching technology is adopted for the silicon wafer, the contactable area with a reactant is increased, and reaction effects are enhanced; and composite rare metal material is added to a reaction core, magnetic thermal properties are used, thermal energy is used high-efficiently, the pyroelectric ability of the silicon wafer is integrated to enable power to be enhanced. In the aspect of design, the surface of the silicon wafer is coated with an irregular metal coating layer, full contact with the tritium gas and filling liquid is realized, and the reaction area is increased. According to an international research on a nuclear power cell at present, mainly, primary radiation serves as energy, technology processing is carried out on the silicon wafer, the reaction area is increased, and the tritium gas radiation energy can not be used high efficiently. The scheme of the invention carries out integrated use on the tritium gas radiation energy, and the efficiency is higher than that of a common nuclear power cell.

Thermonuclear electric cell

The invention discloses a sandwiched parallel connection type epitaxy GaN PIN type beta irradiation battery and a preparation method thereof. At present, a nuclear battery has problems of low energy transformation ratio and low output power, and the invention is mainly used to solve the problems. The sandwiched parallel connection type epitaxy GaN PIN type beta irradiation battery of the invention comprises an upper PIN junction and a lower PIN junction which are connected in parallel and a beta radiation source layer. The lower PIN junction comprised a P-type ohmic contact electrode, a P-type highly-doped GaN epitaxial layer, an N-type highly-doped 4H-SiC substrate, an N-type lightly-doped SiC epitaxial layer and an N-type ohmic contact electrode from top to bottom successively. The structure distribution of the upper PIN junction from down to up is the same as the structure distribution of the lower PIN junction from top to bottom. The beta radiation source layer is sandwiched between the P-type ohmic contact electrodes of the upper PIN junction and the lower PIN junction so as to realize the full utilization of high-energy beta particles. According to the invention, advantages of large radiation source and semiconductor contact area, high nuclear raw material utilization rate and energy collection rate and large battery output voltage can be realized, and the battery can be used to supply power to a small circuit in a lasting manner or supply power in occasions, such as polar regions, desert, etc.

Sandwiched parallel connection type epitaxy GaN PIN type beta irradiation battery and preparation method thereof

The invention discloses a 3D PIN-structure Beta irradiation battery and a preparation method thereof, and mainly aims to solve the problem that the existing Beta irradiation battery is low in energy conversion efficiency and output power. The method comprises the following steps: first, an N-type lowly-doped 4H-SiC epitaxial layer and a P-type highly-doped 4H-SiC epitaxial layer are sequentially grown on a cleaned 4H-SiC substrate in an epitaxial way; then, an Ni ohmic contact electrode is deposited on the P-type highly-doped epitaxial layer and the non-epitaxial back of the SiC substrate; next, a trench window is photo-etched on a P-type ohmic contact electrode, and a trench is etched; and finally, a Beta radioactive source is placed in the trench to obtain a 3D PIN-structure Beta irradiation battery. The Beta irradiation battery prepared by use of the method has the advantages of large area of contact between the Beta radioactive source and a semiconductor, high nuclear material utilization rate, high energy collection rate, high output current and high output voltage, and can permanently supply power to a heart pacemaker and other tiny circuits or supply power on unattended occasions in need of long-term power supply.

3D PIN-structure Beta irradiation battery and preparation method thereof

Epitaxial silicon-based PIN node micro isotope battery and preparation method thereof

The utility model relates to an interlay structure battery based on a liquid semiconductor, comprising a substrate, a metal layer, a liquid semiconductor, an insulating material, a radioactive metal and a non-radioactive metal, wherein the radioactive metal and the non-radioactive metal form an integral structure, the radioactive metal is arranged at the middle of the non-radioactive metal, the insulating material, the metal layer and the substrate are orderly arranged on the upper and lower surfaces of the integral structure from the near to the distant, the insulating material is provided with a hollow structure, the liquid semiconductor is arranged inside the cavity of the insulating material, the radioactive metal and the liquid semiconductor form Schottky contact or ohmic contact, and the metal layer and the liquid semiconductor form ohmic contact or Schottky contact. The interlayer structure battery based on a liquid semiconductor can resolve the problems of being severe in semiconductor radiation damage and short in battery service life, employs a liquid semiconductor and a radioactive source type isotope source with a long service life, and is provided with an interlay structure, thereby comprehensively increasing the output performance of the battery and the application value of the battery.

Interlayer structure battery based on liquid semiconductor

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Epitaxial silicon-based PIN node micro isotope battery and preparation method thereof

Interlayer structure battery based on liquid semiconductor

Interlayer structure nuclear battery based on liquid semiconductor and preparation method thereof