Low-dimensional wide-bandgap semiconductors for UV photodetectors

Mid-infrared (MIR) photodetection, covering diverse molecular vibrational regions and atmospheric transmission windows, is vital to civil and military purposes. Versatile use of MIR photodetectors is commonly dominated by HgCdTe alloys, InSb, and quantum superlattices, which are limited by strict operation demands, high-cost, and environmental toxicity. Despite the rapid advances of black phosphorus (BP)-based MIR photodetectors, these are subject to poor stability and large-area integration difficulty. Here, the van der Waals (vdW) epitaxial growth of a wafer-scale 2D platinum ditelluride (PtTe2 ) layer is reported via a simple tellurium-vapor transformation approach. The 2D PtTe2 layer possesses a unique mosaic-like crystal structure consisting of single-crystal domains with highly preferential [001] orientation along the normal direction, reducing the influence of interface defects and ensuring efficient out-of-plane carrier transportation. This characteristic, combined with the wide absorption of PtTe2 and well-designed vertical device architecture, makes the PtTe2 /Si Schottky junction photodetector capable of sensing ultra-broadband light of up to 10.6 µm with a high specific detectivity. Also, the photodetector exhibits an excellent room-temperature infrared-imaging capability. This approach provides a new design concept for high-performance, room-temperature MIR photodetection based on 2D layered materials.

Van der Waals Epitaxial Growth of Mosaic‐Like 2D Platinum Ditelluride Layers for Room‐Temperature Mid‐Infrared Photodetection up to 10.6 µm

A series of BiOBr catalysts with different microstructures were synthesized by tuning the solvothermal conditions. Assisted by the surface photovoltage, transient photovoltage and time-resolved photoluminescence techniques, the photoexcited charge carriers separation and transfer dynamics were comparatively investigated. The results indicated that the hierarchical BiOBr microflower (BiOBr MF) consisting of well-organized ultrathin nanoflakes were most efficient in promoting charge carrier separation and migration, resulting from the nearly 100 % {001} facets exposed with more oxygen defects. Furthermore, the photocatalytic performance was estimated through the degradation of gaseous ortho-dichlorobenzene (o-DCB) under visible light irradiation, and the BiOBr MF exhibited superior photoactivity. The enhanced mechanism underlying the charge transfer was disclosed by the energy band structures and the reactive oxygen species which were examined by room temperature electron spin resonance. In addition, the catalytic oxidation process of o-DCB over the BiOBr MF and the corresponding surface intermediates was revealed by in situ FTIR spectroscopy.

Ultrathin nanoflake-assembled hierarchical BiOBr microflower with highly exposed {001} facets for efficient photocatalytic degradation of gaseous ortho-dichlorobenzene

Layered bismuth-based photocatalysts

Hierarchical defect-rich flower-like BiOBr/Ag nanoparticles/ultrathin g-C3N4 with transfer channels plasmonic Z-scheme heterojunction photocatalyst for accelerated visible-light-driven photothermal-photocatalytic oxytetracycline degradation

Ternary two-dimensional (2D) semiconductors with controllable wide bandgap, high ultraviolet (UV) absorption coefficient, and critical tuning freedom degree of stoichiometry variation have a great application prospect for UV detection. However, as-reported ternary 2D semiconductors often possess a bandgap below 3.0 eV, which must be further enlarged to achieve comprehensively improved UV, especially deep-UV (DUV), detection capacity. Herein, sub-one-unit-cell 2D monolayer BiOBr nanoflakes (≈0.57 nm) with a large size of 70 µm are synthesized for high-performance DUV detection due to the large bandgap of 3.69 eV. Phototransistors based on the 2D ultrathin BiOBr nanoflakes deliver remarkable DUV detection performance including ultrahigh photoresponsivity (Rλ , 12739.13 A W-1 ), ultrahigh external quantum efficiency (EQE, 6.46 × 106 %), and excellent detectivity (D*, 8.37 × 1012 Jones) at 245 nm with a gate voltage (Vg ) of 35 V attributed to the photogating effects. The ultrafast response (τrise = 102 µs) can be achieved by utilizing photoconduction effects at Vg of -40 V. The combination of photocurrent generation mechanisms for BiOBr-based phototransistors controlled by Vg can pave a way for designing novel 2D optoelectronic materials to achieve optimal device performance.

Large-Scale Ultrathin 2D Wide-Bandgap BiOBr Nanoflakes for Gate-Controlled Deep-Ultraviolet Phototransistors

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Large-Scale Ultrathin 2D Wide-Bandgap BiOBr Nanoflakes for Gate-Controlled Deep-Ultraviolet Phototransistors