Packaged semiconductor devices and packaging devices and methods are disclosed. In one embodiment, a method of packaging a semiconductor device includes providing a first integrated circuit die that is coupled to a first surface of a substrate that includes through-substrate vias (TSVs) disposed therein. A conductive ball is coupled to each of the TSVs on a second surface of the substrate that is opposite the first surface of the substrate. A second integrated circuit die is coupled to the second surface of the substrate, and a molding compound is formed over the conductive balls, the second integrated circuit die, and the second surface of the substrate. The molding compound is removed from over a top surface of the conductive balls, and the top surface of the conductive balls is recessed. A redistribution layer (RDL) is formed over the top surface of the conductive balls and the molding compound.

Packaged semiconductor devices and packaging devices and methods

Modern biosensors play a critical role in healthcare and have a quickly growing commercial market. Compared to traditional optical-based sensing, electrochemical biosensors are attractive due to superior performance in response time, cost, complexity and potential for miniaturization. To address the shortcomings of traditional benchtop electrochemical instruments, in recent years, many complementary metal oxide semiconductor (CMOS) instrumentation circuits have been reported for electrochemical biosensors. This paper provides a review and analysis of CMOS electrochemical instrumentation circuits. First, important concepts in electrochemical sensing are presented from an instrumentation point of view. Then, electrochemical instrumentation circuits are organized into functional classes, and reported CMOS circuits are reviewed and analyzed to illuminate design options and performance tradeoffs. Finally, recent trends and challenges toward on-CMOS sensor integration that could enable highly miniaturized electrochemical biosensor microsystems are discussed. The information in the paper can guide next generation electrochemical sensor design.

/pdf/cmos-electrochemical-instrumentation-for-biosensor-25psfzdm9j.pdf

CMOS Electrochemical Instrumentation for Biosensor Microsystems: A Review

In this paper, the warpage and thermal performances of fan-out wafer-level packaging (FOWLP) are investigated. Emphasis is placed on the characterization of the effects of FOWLP important parameters, such as chip size, chip thickness, package/chip area ratio, epoxy molding compound (EMC), chip EMC cap, reconstituted carrier material and thickness, and die-attach film, on the warpage after postmold cure and backgrinding of the EMC. The simulation results are compared to the experimental measurements. Also, the thermal performance (junction-to-ambient thermal resistance) of FOWLP with various chip thicknesses is characterized. Finally, some FOWLP important parameters affecting the warpage and thermal performances are recommended.

Warpage and Thermal Characterization of Fan-Out Wafer-Level Packaging

The recent advances and trends in fan-out wafer/panel-level packaging (FOW/PLP) are presented in this study. Emphasis is placed on: (A) the package formations such as (a) chip first and die face-up, (b) chip first and die face-down, and (c) chip last or redistribution layer (RDL)-first; (B) the RDL fabrications such as (a) organic RDLs, (b) inorganic RDLs, (c) hybrid RDLs, and (d) laser direct imaging (LDI)/printed circuit board (PCB) Cu platting and etching RDLs; (C) warpage; (D) thermal performance; (E) the temporary wafer versus panel carriers; and (F) the reliability of packages on PCBs subjected to thermal cycling condition. Some opportunities for FOW/PLP will be presented.

Recent Advances and Trends in Fan-Out Wafer/Panel-Level Packaging

In this study, the warpage and thermal performances of fan-out wafer-level packaging (FOWLP) are investigated. Emphasis is placed on the characterization of the effects of FOWLP important parameters, such as chip size, chip thickness, package/chip area ratio, epoxy molding compound (EMC), chip EMC cap, carrier material and thickness, and die-attach film, on the warpage after post mold cure (PMC) and backgrinding of the EMC. The simulation results are compared with the experimental measurements. Also, the thermal performance (junction-to-ambient thermal resistance) of FOWLP with various chip thicknesses is characterized. Finally, some FOWLP important parameters affecting the warpage and thermal performances are recommended.

This paper presents the development of wafer level embedding process for a three dimensional (3D) embedded micro wafer level package (EMWLP). Wafer level embedding process was carried out by using compression molding machine and low-cost granular epoxy molding compound (EMC). Various molding process parameters such as molding time and temperature and three EMCs of different CTEs were analyzed to achieve reliable 3D EMWLP. Several molding process issues, such as warpage, die-sweep, EMC penetration, and die-shift, were faced during embedding process development. A large warpage of more than 1 mm and die-shift of more than 600 µm were found to occur in reconstructed molded wafer. Wafer level embedding process was optimized to reduce warpage and die-shift problems. A significant reduction in warpage (∼ 30 %) and die-shift (∼ 88 %) were achieved after embedding process optimization. The detail of process optimization is presented in the paper. Reconstructed molded wafers were subjected to various reliability tests, such as thermal cycle (TC), moisture sensitivity test-level 3 (MST-L3), and highly accelerated stress test (HAST). Scanning acoustic microscopy (SAM) analysis of molded wafers was carried out to analyze the void formation and delamination in molded wafers. No major void or delamination was observed in reconstructed wafer after molding as well as after reliability tests.

Wafer level embedding technology for 3D wafer level embedded package

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Wafer level embedding technology for 3D wafer level embedded package