Xavier Perpiñà
Spanish National Research Council
117 Papers
465 Citations
Xavier Perpiñà is an academic researcher from Spanish National Research Council. The author has contributed to research in topics: Power semiconductor device & Integrated circuit. The author has an hindex of 20, co-authored 109 publications. Previous affiliations of Xavier Perpiñà include Alstom & Autonomous University of Barcelona.
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Papers
A Survey of Wide Bandgap Power Semiconductor Devices
TL;DR: In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.
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Gate Oxide Degradation of SiC MOSFET in Switching Conditions
Remy Ouaida,Maxime Berthou,Javier León,Xavier Perpiñà,Sebastien Oge,Pierre Brosselard,Charles Joubert +6 more
TL;DR: In this article, a specific aging test has been developed to monitor and characterize the electrical parameters of the SiC MOSFET, which allows estimations of the health state and predictions of the remaining lifetime prior to its failure.
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SiC Schottky Diodes for Harsh Environment Space Applications
Philippe Godignon,X. Jorda,Miquel Vellvehi,Xavier Perpiñà,Viorel Banu,D. Lopez,J. Barbero,Pierre Brosselard,S. Massetti +8 more
TL;DR: The manufactured diodes demonstrated high stability for a continuous operation at 285 °C and the use of gold metallization and gold wire bonds on the anode allows reducing the diode surface and bonding degradation when compared to Al-containing technology.
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Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications
Luis A. Navarro,Xavier Perpiñà,Philippe Godignon,Josep Montserrat,Viorel Banu,Miquel Vellvehi,X. Jorda +6 more
TL;DR: In this paper, a comparative analysis of the thermomechanical performance of high-temperature die-attach materials (sintered nano-Ag, AuGe, and PbSnAg) under harsh thermal cycling tests is presented.
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Short-Circuit Study in Medium-Voltage GaN Cascodes, p-GaN HEMTs, and GaN MISHEMTs
Manuel Hernández Fernández,Xavier Perpiñà,Jaume Roig-Guitart,Miquel Vellvehi,Filip Bauwens,Marnix Tack,X. Jorda +6 more
TL;DR: This paper studies by experimentation and physics-based simulation the Short-Circuit (SC) capability of several normally-off 600–650 V Gallium Nitride High-Electron-Mobility Transistors: cascodes, p-GaN, and GaN Metal–Insulator–Semiconductor HEMTs (MISHEMTs).
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