Materials science is recognized as one of the main factors driving development and economic growth. Since the silicon industrial revolution of the 1950s, research and developments in materials and solid state science have radically impacted and transformed our society by enabling the emergence of the computer technologies, wireless communications, Internet, digital data storage, and widespread consumer electronics. Today's emergent topics in solid state physics, such as nano-materials, graphene and carbon nano-tubes, smart and advanced functional materials, spintronic materials, bio-materials, and multiferroic materials, promise to deliver a new wave of technological advances and economic impact, comparable to the silicon industrial revolution of the 1950s.The surge of interest in multiferroic materials over the past 15 years has been driven by their fascinating physical properties and huge potential for technological applications. This article addresses some of the fundamental aspects of solid-state mult...

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Fundamentals of Multiferroic Materials and Their Possible Applications

The discovery of ferroelectricity in aluminum scandium nitride (Al1-xScxN) opens technological perspectives for harsh environments and space-related memory applications, considering the high-temperature stability of piezoelectricity in aluminum nitride. The ferroelectric and material properties of 100 nm-thick Al0.72Sc0.28N are studied up to 873 K, combining both electrical and in situ X-ray diffraction measurements as well as transmission electron microscopy and energy-dispersive X-ray spectroscopy. The present work demonstrates that Al0.72Sc0.28N can achieve high switching polarization and tunable coercive fields in a 375 K temperature range from room temperature up to 673 K. The degradation of the ferroelectric properties in the capacitors is observed above this temperature. Reduction of the effective top electrode area and consequent oxidation of the Al0.72Sc0.28N film are mainly responsible for this degradation. A slight variation of the Sc concentration is quantified across grain boundaries, even though its impact on the ferroelectric properties cannot be isolated from those brought by the top electrode deterioration and Al0.72Sc0.28N oxidation. The Curie temperature of Al0.72Sc0.28N is confirmed to be above 873 K, thus corroborating the promising thermal stability of this ferroelectric material. The present results further support the future adoption of Al1-xScxN in memory technologies for harsh environments like applications in space missions.

Thermal Stability of the Ferroelectric Properties in 100 nm-Thick Al0.72Sc0.28N.

Dielectric capacitors show significant advantages of faster charge-discharge time over solid oxide fuel cells, Li-ion batteries, and electrochemical capacitors and have been considered the best candidates for next-generation high-performance pulsed... 

Achieving high overall energy storage performance of KNN-based transparent ceramics by ingenious multiscale designing

Paraelectric and ferroelectric phase structures of SrBi2Ta2O9 were calculated using first-principles density functional theory. Berry phase method is used to study the spontaneous polarization in ferroelectric SrBi2Ta2O9. The spontaneous polarizations of SrBi2Ta2O9 experimental and relaxed structures were calculated to be 34.1 μC/cm2 and 21.0 μC/cm2, respectively, along the crystallographic a-axis. It is found that the spontaneous polarization can be improved by both of ab- and bc-biaxial tensile strains. And the polarization value shows a sizable enhancement by 45% when applying 2.4% ab-biaxial tensile strain. The strain effects on spontaneous polarization are explained in terms of the atomic off-centre displacements.

First principles study of polarization-strain coupling in SrBi2Ta2O9

Nano 180° domains written by local mechanical force via the flexoelectric effect have recently attracted great attention since they may enable applications in which memory bits are written mechanically. Downward effective polarization (DEP), i.e., the net downward-pointing polarization in the zone underneath the pressure-surface contact area, is expected to be large for clear storage and readout of the memory bits. Here, the strain tunability of the DEP of mechanically written domains is investigated by using a multi-field coupling model of the flexoelectric effect. The DEP of mechanically written domains in PbTiO3 films grown on five different substrates is examined. It is found that, when the mechanical force is not large enough for the mechanical writing process with the largest tensile misfit strain to reach a steady state, the DEP of the mechanically written domain increases as the misfit strain changes from being compressive to tensile. In contrast, when the mechanical force applied is sufficiently large for the writing process with the largest compressive misfit strain to reach a steady state, the effect of misfit strain on the DEP is opposite. In the latter case, the reduction of the DEP is mainly ascribed to the decrease of the flexoelectric field, which is reflected by the asymmetry of the polarization-electric field hysteresis loops under local mechanical force. Our work suggests that misfit compressive strains and sufficiently large mechanical force are useful for improving the DEP.

Strain tunability of the downward effective polarization of mechanically written domains in ferroelectric nanofilms

The strain, inevitably existing in ferroelectric films and devices, is an important factor for determining their polarization properties and performances. It requires an understanding of the effects of strain on polarization dynamics of ferroelectric film. Considering the strain effect, an analytic thermally activated electric polarization-switching model was developed for the study of the polarization properties of ferroelectric films. Using this model, we successfully simulated the time dependent polarization reversal, the coercive field, the polarization switching time, and the polarization hysteresis loops as a function of the lattice mismatch, external applied stress, applied electric field, and temperature. Theoretical predications of the model are in good agreement to experimental observations and they reinforce the possibility of using sophisticated thin film fabrication techniques such as lattice mismatch strain to engineer ferroelectric thin films structures and devices with controlled properties. Our study offers clear analytical relations that can be easily used in future studies of ferroelectrics.

http://zhouxz.xtu.edu.cn/uploads/files/1434110993.pdf

Thermally activated polarization dynamics under the effects of lattice mismatch strain and external stress in ferroelectric film

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Thermally activated polarization dynamics under the effects of lattice mismatch strain and external stress in ferroelectric film