X. Yuan
University of Cambridge
7 Papers
47 Citations
X. Yuan is an academic researcher from University of Cambridge. The author has contributed to research in topics: Trench & Insulated-gate bipolar transistor. The author has an hindex of 3, co-authored 7 publications.
Chat about Author
Papers
Ultra-fast LIGBTs and superjunction devices in membrane technology
Florin Udrea,T. Trajkovic,C. Lee,D.M. Garner,X. Yuan,J. Joyce,Nishad Udugampola,G. Bonnet,David Robert Coulson,Russell Jacques,M. Izmajlowicz,N. van der Duijn Schouten,Z. Ansari,P. Moyse,Gehan A. J. Amaratunga +14 more
- 23 May 2005
TL;DR: In this paper, the authors present new results from advanced membrane high power devices and fully functional power ICs and show the feasibility of realising superjunction structures with breakdown capability in excess of 700V using this technology.
38
Suppression of parasitic JFET effect in trench IGBTs by using a self-aligned p base process
TL;DR: In this article, a self-aligned p base process is proposed to suppress the parasitic JFET effect in high voltage Trench insulated gate bipolar transistors (IGBTs).
6
Optimisation of local lifetime control in high power diode
X. Yuan,Florin Udrea,L. Coulbeck,P. Waind,Gehan A. J. Amaratunga +4 more
- 07 Aug 2002
TL;DR: In this paper, a comprehensive study of the static and dynamic performance of diodes using lifetime control technology in comparison with dioded using other techniques is made. But the optimum reduced lifetime region is not always at the anode p-n junction and the optimisation of the location depends on the current decreasing rate di/dt and other device parameters such as the lifetime in the whole n-drift region.
1
Enhanced on-state performance trench IGBT with a self-aligned p base
X. Yuan,Florin Udrea,T. Trajkovic,J. Thomson,P. Waind,P. Taylor,Gehan A. J. Amaratunga +6 more
- 30 Sep 2001
TL;DR: In this paper, a 3.3 kV Trench IGBT with a self-aligned p base is presented, which is based on the use of a common nitride mask for trench etching and p base boron implantation and diffusion.
1
Optimum design of 1.4 kV trench IGBTs-the next generation of high power switching devices
T. Trajkovic,P. Waind,J. Thomson,Florin Udrea,X. Yuan,S. Huang,William I. Milne,Gehan A. J. Amaratunga,D.E. Crees +8 more
- 29 Jun 1999
TL;DR: In this article, the authors present an optimum design of a 1.4 kV trench IGBT using a new, fully integrated, optimisation system comprising process and device simulators and the RSM optimiser.
1