Cathodic vacuum arc is a deposition technique which exhibits unique properties, such as high ion energy, high ionization rate and multiple ion charge states, depending on the cathodic materials. The drawback lies in the presence of macroparticles in the plasma thus preventing this technique from being widely applied. However, in the past decade, much effort had been focused on the elimination of macroparticles and the most successful approach is the use of curved magnetic filters to effectively separate the plasma from the macroparticles. The filtered cathodic vacuum arc (FCVA) refers to the combined cathodic arc with the magnetic filters. This article reports on the fundamentals related to vacuum arc, and the basic concept behind the magnetic filters and its effectiveness in the removal of macroparticles. This promising technique has been further applied to the deposition of metal oxide thin films, which is an important group of materials. The properties of various metal oxide thin films, such as titanium oxide, aluminum oxide, zinc oxide, zirconium oxide, transparent conducting oxides and other oxides, deposited by the FCVA are reviewed in this article. In addition, some applications of the metal oxide thin films will be discussed.

Review of metal oxide films deposited by filtered cathodic vacuum arc technique

We describe a novel high aspect ratio radiofrequency linear ion trap geometry that is amenable to modern microfabrication techniques. The ion trap electrode structure consists of a pair of stacked conducting cantilevers resulting in confining fields that take the form of fringe fields from parallel plate capacitors. The confining potentials are modeled both analytically and numerically. This ion trap geometry may form the basis for large scale quantum computers or parallel quadrupole mass spectrometers.

Planar ion trap geometry for microfabrication

Raman spectroscopy was used to characterize TiN films deposited by using an off-plane double bend filtered cathodic vacuum arc technique. The influence of substrate bias on the Raman spectra was systematically studied. Four peaks at 235, 320, 440, and 570 cm−1, related to transverse acoustic (TA), longitudinal acoustic (LA), second-order acoustic (2A), and transverse optical (TO) modes of TiN, respectively, were observed in the Raman spectra of TiN films. The intensity of all four peaks and the area fraction as well as the full width at half maximum (FWHM) of the TO peak increase drastically with increasing substrate bias, reaching a maximum at −100 V, and then decrease greatly. However, the area fraction of TA, LA, and 2A peaks, the FWHM of TA and 2A peaks, as well as the frequency of all four peaks decrease rapidly with increasing substrate bias to −100 V, and then increase greatly. At a bias above −200 V, only a slight change in the Raman spectra of TiN films were observed. The change in the N/Ti ratio...

Substrate bias dependence of Raman spectra for TiN films deposited by filtered cathodic vacuum arc

Cu films prepared by bipolar pulsed high power impulse magnetron sputtering

We describe a novel high aspect ratio radiofrequency linear ion trap geometry that is amenable to modern microfabrication techniques. The ion trap electrode structure consists of a pair of stacked conducting cantilevers resulting in confining fields that take the form of fringe fields from parallel plate capacitors. The confining potentials are modeled both analytically and numerically. This ion trap geometry may form the basis for large scale quantum computers or parallel quadrupole mass spectrometers. 
PACS: 39.25.+k, 03.67.Lx, 07.75.+h, 07.10+Cm

Planar Ion Trap Geometry for Microfabrication

(Ti, Al)N films were deposited by an off-plane, double-bend, filtered cathodic vacuum arc technique in N2 atmosphere at room temperature. The (Ti, Al)N films deposited are atomically smooth. The influence of substrate negative bias at the wide range (0–1000 V) on the deposition rate, surface morphology, crystal structure, internal stress, and mechanical properties of (Ti, Al)N films were systematically studied. Increasing substrate bias results in the decrease of deposition rate and the increase of surface roughness monotonically. At the bias of 0 V, (Ti, Al)N films are amorphous, and the internal stress, hardness, and Young’s modulus for the deposited films are fairly low. With increasing substrate bias to 200 V, single-phase face-centered cubic-type nanocrystalline (Ti, Al)N films can be obtained, and the internal stress, hardness, and Young’s modulus increase to the maximum of 7 GPa, 28 GPa, and 240 GPa, respectively. Further increase of substrate bias results in the decrease of intensity and the broad...

Influence of substrate bias on the structure and properties of (Ti, Al)N films deposited by filtered cathodic vacuum arc

Copper films were deposited by a novel off-plane double bend filtered cathodic vacuum arc technique at ambient temperatures. X-ray diffraction (XRD) and atomic force microscopy (AFM) are used to characterize the film’s structure and surface morphology. The substrate bending method was used to study the internal stress. The influence of substrate bias on the surface morphology, grain size, crystalline structure, and internal stress was systematically studied. XRD results indicate that all the deposited Cu films exhibit face-centered cubic-type (fcc) crystallite structure with (111) preferred orientation growth. The increase of substrate bias results in the improvement of (111) preferred orientation. At the substrate bias of 0 V, the deposited films are composed of nano-sized columnar grains, which contribute to the tensile stress in the deposited films. The grain size and surface roughness increase gradually with increasing substrate bias up to −200 V. Further increase of substrate bias results in the drastic decrease of grain size and surface roughness due to self-sputtering. The internal stress in the deposited films is also strongly dependent on the substrate bias. The increase of substrate bias results in the decrease of tensile stress in the deposited films, and the transition of tensile to compressive stress at the substrate bias of −300 V. Further increase of substrate bias results in the linear increase of compressive stress in the deposited films. At the substrate bias of −300 V, dense and stress-free Cu films can be obtained.

Influence of substrate bias on the microstructure and internal stress in Cu films deposited by filtered cathodic vacuum arc

(Ti, Al)N films were deposited by a new off-plane double bend filtered cathodic vacuum arc technique under a nitrogen atmosphere at room temperature. Scanning electron microscopy and atomic force microscopy were used to observe the surface morphology of the deposited films. X-ray photoelectron spectroscopy was used to determine the composition and bonding structure of the deposited films. A scratch test was used to access the film adhesion. The deposited films are atomically smooth and particle free. The Al/Ti atomic ratio in the deposited films is around 1. The films deposited at the pressure of 1×10−4 Torr are composed of metallic Ti and Al phase and a small amount of (Ti, Al)N phase. For the films deposited at the pressure of 1.5×10−3 Torr, (Ti, Al)N phases are dominant. The scratch test indicates that the critical load increases with increasing deposition pressure up to 1.5×10−3 Torr, then decrease drastically with the further increase of deposition pressure. As substrate bias is increased, critical load increases and reachs the maximum at the bias of 200 V, then decreases at higher bias. The hardness of the deposited films is found to be the main factor that affects the critical load of the thin films.

Characterization of (Ti, Al)N films deposited by off-plane double bend filtered cathodic vacuum arc

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Papers

Influence of substrate bias on the structure and properties of (Ti, Al)N films deposited by filtered cathodic vacuum arc

Influence of substrate bias on the microstructure and internal stress in Cu films deposited by filtered cathodic vacuum arc

Characterization of (Ti, Al)N films deposited by off-plane double bend filtered cathodic vacuum arc