Switching power semiconductor online junction temperature $T_{j}$ sensing is essential for device switching performance evaluation, device switching control, and device lifetime optimization. The contribution of this paper is a detailed evaluation of the implementation issues (including circuit invasiveness, hardware integration, signal processing, and so forth) of different online $T_{j}$ sensing methods. This paper includes $T_{j}$ sensing methods based on device power dissipation, $T_{j}$ sensing methods based on the “sensor-on-die technology,” $T_{j}$ sensing methods based on device on-state analysis, and $T_{j}$ sensing methods based on device switching transients. Advantages and limits of these methods are also provided.

Evaluating Different Implementations of Online Junction Temperature Sensing for Switching Power Semiconductors

Switching power semiconductor online junction temperature (T j ) sensing is essential for device switching performance evaluation, device switching control, and device lifetime optimization. The contribution of this paper is a detailed evaluation of implementation issues (including circuit invasiveness, hardware integration, signal processing, and so forth) of different online T j sensing methods. This paper includes T j sensing methods based on device power dissipation, T j sensing methods based on the “diode-on-die technology”, T j sensing methods based on device on-state analysis, and T j sensing methods based on device switching transients. Advantages and limits of these methods are also provided.

Evaluating different implementations of online junction temperature sensing for switching power semiconductors

This paper proposes an electrical method for estimation of the vertical junction temperature of silicon carbide bipolar junction transistors (SiC BJTs). This measurement method is based on measurement of the base–collector voltage ( V BC) drop at a low current ( V BC(low)) during the turn- off process. This voltage shows both good sensitivity and linearity with respect to temperature. The traditional temperature-sensitive electrical parameter V BE(low) (i.e., the base-emitter voltage at a low current) and an infrared camera are used to compare the characteristics of V BC(low). The results show that use of V BC(low) provides more accurate junction temperature and thermal resistance measurement results, which can then be used to extract the vertical junction temperature of the SiC BJT under test.

Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base–Collector Voltage Drop at Low Current

The junction temperature of a die inside an electronic component is empirically determined by use of a board simulator that simulates a target board on which the electronic component is to be operated. The board simulator includes a thermoelectric cooler used to electrically control the board simulator's thermal resistivity. The board simulator's thermal resistivity is determined in a first calibration step by measuring the difference in temperatures between two thermocouples mounted on two sides of the board simulator. Then, the board simulator is attached to a test component that includes a heating element and a temperature sensor. In a second calibration step, for a known thermal power generated by the heating element, the junction temperature of the test component is measured for different values of thermal resistivity of the board simulator. Next in a measurement step, the user determines the thermal resistivity of the target board. Then the user uses the measured resistivity to look up the junction temperature of the test component from the calibration measurements, which is the estimated junction temperature of the electronic component. The board simulator includes a heat sink, a peltier device coupled to the heat sink and an optional coupon coupled to the peltier device. The coupon can be formed of the same material as the target board, or of a different material of a known thermal conductivity.

Device for simulating dissipation of thermal power by a board supporting an electronic component

The accuracy of the three predominant techniques for measuring the surface temperatures of GaAs ICs under operation was investigated. The most important result is that the precision of commercially available computerized infrared microscopy is more limited than previously believed, especially in the case when the minimum IC element size is smaller than its spatial resolution. Some type of emissivity correction is necessary to obtain high precision. At this stage, therefore, the diode drop technique, an electrical method, and the transition point technique, a liquid crystal method, or their combination, must be used for measurement with high accuracy. The transition point technique has been determined to have a precision as great as +or-2 degrees C for measurement at the actual hot spot of non-sealed GaAs ICs. The diode drop technique is the only method which is useful for sealed ICs. >

Precisional comparison of surface temperature measurement techniques for GaAs ICs

An electrical technique is described which can perform a fast measurement of the peak junction temperature of power transistors. The fundamental principles of this technique are summarized as three modifications to the standard electrical technique for measuring the junction temperature. Personal-computer-controlled equipment has been developed based on these principles. In comparison with the infrared-measured peak junction temperature, the measuring error of the equipment is within 8%, whereas the error of the standard electrical method may be up to 50% under the same conditions. The equipment reported here can provide convenience for device manufacturers and users in evaluating device thermal behavior and conducting reliability screening. >

http://ieeexplore.ieee.org/iel2/525/3992/00152909.pdf

Fast measurement of the peak junction temperature of power transistors using electrical method

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Fast measurement of the peak junction temperature of power transistors using electrical method