Wu Junqing

TL;DR: In this paper, a method for preparing an antireflection film with the potential induced degradation (PID) effect resistance is presented, which includes the following steps: vacuumizing a furnace tube under a pressure of 80mTorr for 4min under the condition that the inner temperature of the furnace is 420 DEG C, pretreating a silicon wafer at 420 deG C under a high pressure of 1700m Torr, and performing a pressure test under the conditions that inner pressure of the device is kept constant at 50m torr for 0.2-0

TL;DR: In this article, a method for preparing SiOx-SiNx laminated films of a crystal silicon solar cell is described, which consists of coating an antireflective film on crystalline silicon glass after the processes of cleaning, making herbs into wool, diffusing by phosphorus, etching by plasma, and removing phosphorosilicate glass.

TL;DR: In this paper, a preparation method for a silicon dioxide film of a selective emitter battery piece, which comprises the following steps: (1), a silicon wafer is soaked into silicon-wafer nitric acid solution, the concentration of acid is 65-70%, the soaking time is 3-5min, the soaking temperature is 8 DEG C constantly, silicon dioxide is generated on the surface of the siliconwafer due to the oxidability of the acid, meanwhile, nitrogen oxides (by-products in the reaction) are combined with water to generate nitrous

TL;DR: In this article, a method for fabricating anti-reflection film with anti-PID effect is presented, which consists of vacuuming a furnace tube, holding the temperature in the furnace at 420° C. and the pressure as 80 mTorr for 4 minutes; pretreating silicon wafers at 420.