Willard E. Conley
Motorola
21 Papers
274 Citations
Willard E. Conley is an academic researcher from Motorola. The author has contributed to research in topics: Resist & Photoresist. The author has an hindex of 9, co-authored 21 publications. Previous affiliations of Willard E. Conley include University of Texas at Austin & Freescale Semiconductor.
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Papers
Contact hole reticle optimization by using interference mapping lithography (IML)
Robert John Socha,Douglas Van Den Broeke,Stephen Hsu,J. Fung Chen,Thomas Laidig,Noel Corcoran,Uwe Hollerbach,Kurt E. Wampler,Xuelong Shi,Willard E. Conley +9 more
- 20 Aug 2004
TL;DR: In this article, the theory of interference mapping lithography (IML) is presented for low k1 (k1 < 0.4) contact hole imaging, and techniques to optimize a binary mask or a CPL mask for maximizing the exposure latitude (EL) or depth of focus (DOF).
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Liquid immersion lithography: evaluation of resist issues
William D. Hinsberg,Gregory M. Wallraff,Carl E. Larson,Blake Davis,Vaughn R. Deline,Simone Raoux,Dolores C. Miller,Frances A. Houle,John A. Hoffnagle,Martha I. Sanchez,Charles T. Rettner,Linda K. Sundberg,David R. Medeiros,Ralph R. Dammel,Willard E. Conley +14 more
- 14 May 2004
TL;DR: In this paper, the authors address a set of key questions tied to the implementation of liquid immersion lithography from the perspective of the resist materials and discuss the broad question of whether chemically amplified resists are capable of achieving the spatial resolution that ultimately will be required for the most advanced immersion scenario.
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Patent
Method of designing a reticle and forming a semiconductor device therewith
Kevin D. Lucas,Robert E Boone,Russell L. Carter,Willard E. Conley +3 more
- 07 Jun 2004
TL;DR: In this article, the first edge corresponds to a reference feature and the subresolution assist features are not patterned on the substrate, but assist in forming resist features of uniform dimension.
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The Design of Resist Materials for 157nm Lithography
C. Grant Willson,Brian C. Trinque,Brian Osborn,Charles R. Chambers,Yu Tsai Hsieh,Takashi Chiba,Paul Zimmerman,Daniel Miller,Willard E. Conley +8 more
TL;DR: In this article, the synthesis and characterization of several new fluoropolymers designed for use in the formulation of photoresists for exposure at 157nm was described, based on learning from previously reported fluorine-containing materials.
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Experimental techniques for detection of components extracted from model 193 nm immersion lithography photoresists
J. Christopher Taylor,Robert J. LeSuer,Charles R. Chambers,Fu-Ren F. Fan,Allen J. Bard,Willard E. Conley,C. Grant Willson +6 more
TL;DR: In this paper, the amount of PAG leaching from resist films, 30−50 ng/cm2, was quantified using liquid scintillation counting (LSC), liquid chromatography mass spectrometry (LCMS), and scanning electrochemical microscopy (SECM).
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