Wenxia You
Hunan University
8 Papers
1 Citations
Wenxia You is an academic researcher from Hunan University. The author has contributed to research in topics: Heterojunction & Chemistry. The author has an hindex of 1, co-authored 2 publications.
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Papers
Reconfigurable logic-in-memory architectures based on a two-dimensional van der Waals heterostructure device
Xingxia Sun,Chenguang Zhu,Jiali Yi,Li Xiang,Chaoqun Ma,Huawei Liu,Biyuan Zheng,Yong Xiang Liu,Wenxia You,Wujun Zhang,Delang Liang,Qin Shuai,Xiaoli Zhu,Huigao Duan,Lei Liao,Yuan Liu,Dong Mei Li,Anlian Pan +17 more
TL;DR: A two-dimensional van der Waals heterostructure device that has a partial floating-gate field-effect transistor device architecture can function as both reconfigurable transistor and reconfigured non-volatile memory, as well as provide reconfigured logic-in-memory capabilities.
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Double-Gate MoS 2 Field-Effect Transistors with Full-Range Tunable Threshold Voltage for Multifunctional Logic Circuits
Jiali Yi,Xingxia Sun,Chenguang Zhu,Shengman Li,Yong Liu,Xiaoli Zhu,Wenxia You,Delang Liang,Qin Shuai,Yanqing Wu,Dong Li,Anlian Pan +11 more
TL;DR: In this article, a double-gate field effect transistor architecture with equal top and bottom gate (TG and BG) was proposed to realize flexible optimization of the subthreshold swing and threshold voltage.
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A Waveguide-Integrated Two-Dimensional Light-Emitting Diode Based on p-Type WSe2/n-Type CdS Nanoribbon Heterojunction.
Xin Yang,Rong Wu,Biyuan Zheng,Ziyu Luo,Wenxia You,Huawei Liu,Lihui Li,Yushuang Zhang,Qin Tan,Delang Liang,Ying Chen,Junyu Qu,Xiao Yi,Xingjun Wang,Jun Zhou,Huigao Duan,Shuangyin Wang,Shula Chen,Anlian Pan +18 more
TL;DR: In this paper , a room-temperature waveguide-integrated light-emitting device based on a p-type monolayer (ML) tungsten diselenide (WSe2) and n-type cadmium sulfide (CdS) nanoribbon (NR) heterojunction diode was presented.
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Van der Waals epitaxial growth and optoelectronics of a vertical MoS2/WSe2 p–n junction
Yu Xiao,Junyu Qu,Ziyu Luo,Ying Chen,Xin Yang,Danliang Zhang,Honglai Li,Biyuan Zheng,Jiali Yi,Rong Wu,Wenxia You,Bo Liu,Shula Chen,Anlian Pan +13 more
TL;DR: In this paper , an atomically thin vertical p-n junction WSe 2 /MoS 2 produced by a chemical vapor deposition method was reported, which exhibited bipolar behaviors and a mobility of 9 cm 2 /(V·s).
Strong interfacial coupling in vertical WSe2/WS2 heterostructure for high performance photodetection
Wenxia You,Biyuan Zheng,Zheyuan Xu,Yujing Jiang,Chenguang Zhu,Weihao Zheng,Xin Yang,Xingxia Sun,Jieyuan Liang,Xiao Yi,Tinghao Wang,Fei Gao,Xiaoli Zhu,Quan Yuan,Dong Mei Li,Anlian Pan +15 more
TL;DR: In this paper , a two-step chemical vapor deposition method was proposed for the growth of high quality WS2 on a WSe2 template with a very low temperature of ∼550°C, where WO3 nanosheets formed in the first step were further employed as the precursor for synthesis of the top WS2 layer in the second step.
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