Axial NiO/β-Ga2O3 heterostructure (HS) nanowires (NWs) array was fabricated on Si substrate by catalytic free and controlled growth process called glancing angle deposition technique. The field emission scanning electron microscope image shows the formation of well aligned and vertical NWs. A typical high resolution transmission electron microscope image confirms the formation of axial HS NWs consisting of β-Ga2O3 NW at the top and NiO NW at the bottom with an overall length ∼213 nm. A large photo absorption and also photoemission was observed for axial NiO/β-Ga2O3 HS NW as compared to the NiO/β-Ga2O3 HS thin film sample. Moreover, x-ray photoelectron spectroscopy analysis prove that there are higher oxygen vacancies with no deviation in electronic state after the formation of axial HS NW. Also, a high performance photodetector (PD) with a very low dark current of 6.31 nA and fast photoresponse with rise time and fall time of 0.28 s and 0.17 s respectively at +4 V was achieved using the axial NiO/β-Ga2O3 HS NWs. The type-II HS p-n junction formation and efficient charge separation at the small wire axis also makes this design to operate in self-powered mode.

A novel high performance photodetection based on axial NiO/β-Ga2O3 p-n junction heterostructure nanowires array

Ultrasensitive UV-C photodetector (PD) based on β-Ga2O3 nanowires (NWs) were fabricated on p-type Si substrate using glancing angle deposition technique inside RF/DC sputtering chamber. The formation of well-aligned NWs with an average length of ~ 270 nm was confirmed with the help of field emission scanning electron microscope (FE-SEM) images. Also, the fabricated β-Ga2O3 NWs array were polycrystalline in nature. Furthermore, a good photo absorption and photoemission were obtained from the fabricated sample. The PD fabricated using β-Ga2O3 NW operated in the UV-C region (275 nm) with a recorded responsivity of 31.71 A/W, detectivity of 1.37×1012 Jones and an NEP of 2.44×10−12 W at + 5 V. Additionally, the PD was able to respond at a very low power light of 6.37 µW/cm2. The transient response of the fabricated device shows a rise time and fall time of 0.18 s and 0.25 s respectively. The high performance was attributed to the strong p-n junction which could separate the photogenerated carriers efficiently. 

Ultrasensitive p-n Junction UV-C Photodetector Based on p-Si/β-Ga2O3 Nanowire Arrays

Patterned Ga2O3 nanowires synthesized by CVD method for High-performance self-powered ultraviolet photodetector

Advances and prospects in Ga2O3/GaN heterojunctions: From fabrication to high-performance devices

We investigated the chemical synthesis process of Ga2O3 nanowires including the effect of HCl addition, the post-growth crystallization properties by heat treatment, and their ultraviolet (UV) light sensor properties. Changes...

Study on Chemical synthesis process of Ga2O3 nanowires and their ultraviolet light sensor properties

Ultraviolet photodetector based on vertical β-Ga2O3 nanowire array on GaN substrate

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Ultraviolet photodetector based on vertical β-Ga2O3 nanowire array on GaN substrate