This study develops a compact balun layout to minimize amplitude imbalance. Three baluns with different metal layers are fabricated using 0.13-?m CMOS technology and their imbalance performance evaluated. Measurement made using eight metal layers in coil windings at a particular layout reveal that the proposed device exhibits minimal amplitude and phase imbalance of 0.2 dB and ±0.5° with a chip outer dimension of 100 ?m .

Design of an On-Chip Balun With a Minimum Amplitude Imbalance Using a Symmetric Stack Layout

In this article, a passive balun for 3 T magnetic resonance imaging (MRI) scanners operating at 128 MHz was designed and analyzed to successfully convert a balanced input signal from a dipole/loop antenna into an unbalanced output signal connected to preamplifiers or transmission line. The lumped circuit element, mathematical modeling and simulations and measurement results for the balun performance are shown. The proposed balun is intended to be integrated in electric and magnetic field probes for time domain monitoring of the time-varying RF signals during medical device testing. The implemented balun is fabricated on a low-cost, copper cladded, four-layer FR4 printed circuit board (PCB) with overall footprint of 13.4 mm $\times 14$ mm. A comparison among the ADS momentum simulations and the measured results indicates good agreement with the measured insertion and return losses of better than -1.5 dB and -15 dB, respectively.

PCB Fabricated Passive RF Balun for 3 T MRI Applications

Millimeter-wave concurrent dual-band BiCMOS RFIC transmitter for radar and communication systems

The Application of FDTD and Micro Genetic Algorithms on the Planar Spiral Inductors

/pdf/device-design-characterization-and-modeling-of-inductors-and-11czit2pqd.pdf

Device design, characterization and modeling of inductors and interconnects for RFIC applications.

The design of a broadband monolithic passive balun using planar-spiral transformers structure is described. Operational frequencies of the range from 15 GHz to 35 GHz and the center frequency is 23.3 GHz. The performance of the balun is simulated, and the results are: the single port power loss (port-to-port conversion loss) is less than 7 dB. The amplitude and phase unbalance are less than 0.5 dB and 5° , respectively, over 16-30 GHz frequency band.

The Design of a Planar-Spiral Transformers Balun Used in RF/MW Based on 0.13 μm CMOS Process

A novel comprehensive and automatic wide-band artificial neural network (ANN)-based modeling methodology for radio-frequency (RF) components is presented. The methodology is applied to differential spiral inductors with various geometrical sizes. The established model is tested with 653 inductors and shows excellent accuracy over the frequency range of 1-20 GHz

A Novel Modeling Methodology for Silicon-based RF Components

In this paper, we develop a fast and accurate synthesis way to effectively generate CMOS spiral inductor's layout parameter using artificial neural network methodology. Under our synthesis methodology, we can simulate and synthesis the geometric parameters of spiral inductor's layout up to the frequency of 20 GHz. Experiments and Results based on octagon differential spiral inductors of TSMC 0.13um MM/RF process indicate that this novel methodology can calculate layout parameters fast and accurately and therefore is of great help for RF circuit designers.

A Novel Wide-Band Layout-level Synthesis Methodology for CMOS Integrated Spiral Inductors with Artificial Neural Network

An elementary formula for the calculation of mutual inductance between two filamentous conductors is derived from a physical formula. According to GMD (Geometric Mean Distance) method and thickness modification, a set of advanced analytical formula for both self and mutual inductance is presented. Due to the analytical formulas, the method is more effective than method based on FEA and more precise than empirical formula and fitting data techniques. Using this technique, inductors of different parameters are calculated. Compared with published experimental measured data, we could verify the validity and accuracy of this method.

An analytical method for the calculation of self and mutual inductance on RF circuit

The design of a new broadband monolithic passive balun using planar-spiral inductor transformers structure is described. Operational frequencies of the range from 15 GHz to 40 GHz and the center frequency is about 20 GHz. The performance of the balun is simulated, and the results are: the single port power loss is less than 6 dB. The amplitude and phase unbalance are less than 0.5 dB and 5 degree, at 15-40 GHz frequency bandwidth, respectively.

The design of a new spiral inductor balun used in RF/MW based on 0.13μm CMOS process

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