https://iopscience.iop.org/article/10.1149/2162-8777/aba447/pdf

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: State-of-the-Art Processing Technologies, Properties, and Applications

The microstructure and optical properties of SiNx deposited by linear microwave chemical vapor deposition

The effect of deposition temperature, deposition pressure, or input gas ratio (SiH2Cl2:NH3) on film stress was determined for low-pressure chemical vapor deposited silicon nitride films. Wafer curvature measurements were performed for films deposited on single crystal silicon and amorphous silica wafer substrates to determine film stress σdep, biaxial modulus Ef+, and coefficient of thermal expansion αf. Apparent plane strain film modulus Ēf′ and hardness H were measured using depth-sensing indentation. Ellipsometry was used to measure film thickness tf and refractive index n. Infrared spectroscopy, x-ray photoelectron spectroscopy (XPS), forward recoil energy spectroscopy (FReS), and Rutherford backscattering spectroscopy (RBS) experiments were performed to determine film composition. Although film deposition stress varied from −135 MPa (compressive) to 235 MPa (tensile) Ef+, Ēf′, H, and αf remained nearly constant. Infrared spectroscopy resolved only Si-N species for all films, and results from FReS on ...

Influence of deposition conditions on mechanical properties of low-pressure chemical vapor deposited low-stress silicon nitride films

Silicon nitride technology has been incorporated in ultra-large scale integration (ULSI) microchip fabrication, thin film transistors (TFT), solar cells, and many other applications in a rapidly expanding market. Nevertheless, silicon nitride technologies currently in use face considerable limitations. Low pressure chemical vapor deposition (LPCVD) occurs at relatively high temperature (>700 °C) and plasma enhanced chemical vapor deposition (PECVD), although occurring at temperatures below 300 °C, produces hydrogen-rich films and could be self-limiting in terms of conformality and damage to the devices due to ion bombardment. In the present work, successful low temperature thermal chemical vapor deposition (LTCVD) of silicon nitride is reported on 8” silicon wafers. The use of a halide-based silicon precursor, tetraiodosilane (SiI4) has led to the deposition of high quality silicon nitride thin films at temperatures as low as 300 °C. Characterization of resulting film properties has been performed to determine their dependence on deposition parameters by Auger Electron Spectroscopy (AES), Rutherford Backscattering Spectroscopy (RBS), Fourier Transform Infrared (FTIR), Nuclear Reaction Analysis (NRA), Ellipsometry, Capacitance-Voltage (C-V), and Current-Voltage (I-V) measurements.

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400191286

Low Temperature Thermal Chemical Vapor Deposition of Silicon Nitride Thin Films for Microelectronics Applications

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Low Temperature Thermal Chemical Vapor Deposition of Silicon Nitride Thin Films for Microelectronics Applications