A concise and factual abstract is required. The abstract should be a single paragraph containing 100-150 words that briefly states the purpose of the research, the principal results and major conclusions. An abstract is often presented separate from the article, so it must be able to stand alone. For this reason, References should be avoided, but if essential, they must be cited in full, without reference to the reference list. Also, non-standard or uncommon abbreviations should be avoided, but if essential they must be defined at their first mention in the abstract itself. Graphical abstract Although a graphical abstract is optional, its use is encouraged as it draws more attention to the online article. The graphical abstract should summarize the contents of the article in a concise, pictorial form designed to capture the attention of a wide readership. Graphical abstracts should be submitted as a separate file in the online submission system. Image size: Please provide an image with a minimum of 531 × 1328 pixels (h × w) or proportionally more. The image should be readable at a size of 5 × 13 cm using a regular screen resolution of 96 dpi. Preferred file types: TIFF, EPS, PDF or MS Office files. You can view Example Graphical Abstracts on our information site. Authors can make use of Elsevier's Illustration Services to ensure the best presentation of their images and in accordance with all technical requirements. Highlights Highlights are mandatory for this journal. They consist of a short collection of bullet points that convey the core findings of the article and should be submitted in a separate editable file in the online submission system. Please use 'Highlights' in the file name and include 3 to 5 bullet points (maximum 85 characters, including spaces, per bullet point). You can view example Highlights on our information site.

Superlattices and microstructures

High-quality epitaxial layers are directly related to internal quantum efficiency. The methods used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light-emitting diode (LED) epitaxial layer structure exhibits electron leakage; therefore, many research groups have proposed the design of blocking layers and carrier transportation to generate high electron–hole recombination rates. This also aids in increasing the internal quantum efficiency. The cap layer, p-GaN, exhibits high absorption in deep UV radiation; thus, a small thickness is usually chosen. Flip chip design is more popular for such devices in the UV band, and the main factors for consideration are light extraction and heat transportation. However, the choice of encapsulation materials is important, because unsuitable encapsulation materials will be degraded by ultraviolet light irradiation. A suitable package design can account for light extraction and heat transportation. Finally, an atomic layer deposition Al2O3 film has been proposed as a mesa passivation layer. It can provide a low reverse current leakage. Moreover, it can help increase the quantum efficiency, enhance the moisture resistance, and improve reliability. UVC LED applications can be used in sterilization, water purification, air purification, and medical and military fields.

https://www.mdpi.com/2304-6732/8/6/196/pdf

Perspectives on UVC LED: Its Progress and Application

The world-wide spreading of coronavirus disease (COVID-19) has greatly shaken human society, thus effective and fast-speed methods of non-daily-life-disturbance sterilization have become extremely significant. In this work, by fully benefitting from high-quality AlN template (with threading dislocation density as low as ≈6×108 cm-2) as well as outstanding deep ultraviolet (UVC-less than 280 nm) light-emitting diodes (LEDs) structure design and epitaxy optimization, high power UVC LEDs and ultra-high-power sterilization irradiation source are achieved. Moreover, for the first time, a result in which a fast and complete elimination of SARS-CoV-2 (the virus causes COVID-19) within only 1 s is achieved by the nearly whole industry-chain-covered product. These results advance the promising potential in UVC-LED disinfection particularly in the shadow of COVID-19.

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202008452

Sec-Eliminating the SARS-CoV-2 by AlGaN Based High Power Deep Ultraviolet Light Source.

Recent Advances and Challenges in AlGaN-based Ultra-violet Light Emitting Diode Technologies

Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review

Influence of the nucleation layer morphology on the structural property of AlN films grown on c-plane sapphire by MOCVD

A metal-source flow-rate modulation epitaxy method is reported to enhance the hole concentration of Mg-doped AlGaN grown by metal organic chemical vapor deposition. The hole concentration of p-type AlGaN (Al content 0.43) is increased to 2.3 × 1017 cm−3 at room temperature by this method, which is about ten times higher than that of the conventional growth. The resistivity was found to be as low as 12.7 Ω·cm. Furthermore, the effective acceptor activation energy (EA) in the AlGaN films (Al content 0.32–0.43) was determined to be 20–22 meV, several times smaller than EA in p-GaN. Secondary ion mass spectroscopy measurements demonstrated that uniformly Mg-doped AlGaN structures with spatially modulated Al compositions were formed using this technique. It is suggested that the enhancement of hole concentration benefits from the modulation of the valence band edge.

Enhanced p-type conduction in AlGaN grown by metal-source flow-rate modulation epitaxy

Growth of quaternary InAlGaN barrier with ultrathin thickness for HEMT application

Improvement of the interfaces in AlGaN/AlN superlattice grown by NH 3 flow-rate modulation epitaxy

Growth of thin AlN nucleation layer and its impact on GaN-on-SiC heteroepitaxy

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