Wei-Shuo Li
National Chiao Tung University
15 Papers
55 Citations
Wei-Shuo Li is an academic researcher from National Chiao Tung University. The author has contributed to research in topics: Thin-film transistor & Thin film. The author has an hindex of 4, co-authored 15 publications.
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Papers
Atomic Layer Deposition Plasma-Based Undoped-HfO 2 Ferroelectric FETs for Non-Volatile Memory
Jun-Dao Luo,Yu-Ying Lai,Kuo-Yu Hsiang,Chia-Feng Wu,Hao-Tung Chung,Wei-Shuo Li,C.-Y. Liao,Pin-Guang Chen,Kuan-Neng Chen,Min-Hung Lee,Huang-Chung Cheng +10 more
TL;DR: In this article, a plasma-based undoped-HfO2 FeFET (ferroelectric FET) with non-volatile memory characteristics is demonstrated, and the O2 plasma period in plasma-enhanced atomic layer deposition (PE-ALD) is an effective approach to enhance the remnant polarization.
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High-Performance Germanium Thin-Film Transistors With Single-Crystal-Like Channel via Continuous-Wave Laser Crystallization
Yi-Shao Li,Chun-Yi Wu,Chan-Yu Liao,Wen-Hsien Huang,Jia-Min Shieh,Chia-Hsin Chou,Kai-Chi Chuang,Jun-Dao Luo,Wei-Shuo Li,Huang-Chung Cheng +9 more
TL;DR: In this paper, a p-channel polycrystalline germanium (poly-Ge) thin-film transistors (TFTs) were fabricated using continuous-wave laser crystallization (CLC).
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Effects of Crystallinity on the Electrical Characteristics of Counter-Doped Polycrystalline Germanium Thin-Film Transistor via Continuous-Wave Laser Crystallization
TL;DR: In this article, the authors demonstrated the crystallinity of polycrystalline germanium (poly-Ge) films through continuous-wave laser crystallization (CLC) with Gaussian-distribution beam profile.
Improvement of ferroelectric properties in undoped hafnium oxide thin films using thermal atomic layer deposition
Jun-Dao Luo,He Xin Zhang,Zheng Ying Wang,Siang Sheng Gu,Yun Tien Yeh,Hao Tung Chung,Kai-Chi Chuang,Chan Yu Liao,Wei-Shuo Li,Yi-Shao Li,Kai Shin Li,Min-Hung Lee,Huang-Chung Cheng +12 more
TL;DR: In this article, the water pulse time during thermal atomic layer deposition is modulated to enhance the ferroelectric properties of undoped HfO2 thin films through grazing incidence X-ray diffraction (GI-XRD).
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