A M was supported by the King Abdullah University of Science and Technology (KAUST) T J acknowledges support from the EU FET Open RIA Grant No 766566, the Ministry of Education of the Czech Republic Grant No LM2015087 and LNSM-LNSpin, and the Grant Agency of the Czech Republic Grant No 19-28375X J S acknowledges the Alexander von Humboldt Foundation, EU FET Open Grant No 766566, EU ERC Synergy Grant No 610115, and the Transregional Collaborative Research Center (SFB/TRR) 173 SPIN+X K G and P G acknowledge stimulating discussions with C O Avci and financial support by the Swiss National Science Foundation (Grants No 200021-153404 and No 200020-172775) and the European Commission under the Seventh Framework Program (spOt project, Grant No 318144) A T acknowledges support by the Agence Nationale de la Recherche, Project No ANR-17-CE24-0025 (TopSky) J Ž acknowledges the Grant Agency of the Czech Republic Grant No 19-18623Y and support from the Institute of Physics of the Czech Academy of Sciences and the Max Planck Society through the Max Planck Partner Group programme

/pdf/current-induced-spin-orbit-torques-in-ferromagnetic-and-3tdt106r3u.pdf

Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

The spin–orbit torque (SOT) that arises from materials with large spin–orbit coupling promises a path for ultralow power and fast magnetic-based storage and computational devices. We investigated the SOT from magnetron-sputtered BixSe(1–x) thin films in BixSe(1–x)/Co20Fe60B20 heterostructures by using d.c. planar Hall and spin-torque ferromagnetic resonance (ST-FMR) methods. Remarkably, the spin torque efficiency (θS) was determined to be as large as 18.62 ± 0.13 and 8.67 ± 1.08 using the d.c. planar Hall and ST-FMR methods, respectively. Moreover, switching of the perpendicular CoFeB multilayers using the SOT from the BixSe(1–x) was observed at room temperature with a low critical magnetization switching current density of 4.3 × 105 A cm–2. Quantum transport simulations using a realistic sp3 tight-binding model suggests that the high SOT in sputtered BixSe(1–x) is due to the quantum confinement effect with a charge-to-spin conversion efficiency that enhances with reduced size and dimensionality. The demonstrated θS, ease of growth of the films on a silicon substrate and successful growth and switching of perpendicular CoFeB multilayers on BixSe(1–x) films provide an avenue for the use of BixSe(1–x) as a spin density generator in SOT-based memory and logic devices. Sputtered BixSe(1–x) thin films can generate very large current-induced spin–orbit torque, capable to switch both in-plane and out-of-plane magnetized CoFeB-based structures deposited on top, at room temperature.

pdf/room-temperature-high-spin-orbit-torque-due-to-quantum-3iuqy03bx1.pdf

Room-temperature high spin-orbit torque due to quantum confinement in sputtered BixSe(1-x) films.

The strongly spin-momentum coupled electronic states in topological insulators (TI) have been extensively pursued to realize efficient magnetic switching. However, previous studies show a large discrepancy of the charge-spin conversion efficiency. Moreover, current-induced magnetic switching with TI can only be observed at cryogenic temperatures. We report spin-orbit torque switching in a TI-ferrimagnet heterostructure with perpendicular magnetic anisotropy at room temperature. The obtained effective spin Hall angle of TI is substantially larger than the previously studied heavy metals. Our results demonstrate robust charge-spin conversion in TI and provide a direct avenue towards applicable TI-based spintronic devices.

Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator.

Spin–orbit torque switching using the spin Hall effect in heavy metals and topological insulators has a great potential for ultralow power magnetoresistive random-access memory. To be competitive with conventional spin-transfer torque switching, a pure spin current source with a large spin Hall angle (θSH > 1) and high electrical conductivity (σ > 105 Ω−1 m−1) is required. Here we demonstrate such a pure spin current source: conductive topological insulator BiSb thin films with σ ≈ 2.5 × 105 Ω−1 m−1, θSH ≈ 52 and spin Hall conductivity σSH ≈ 1.3 × 107 
 $$\frac{\hbar }{{2e}}$$
 Ω−1 m−1 at room temperature. We show that BiSb thin films can generate a very large spin–orbit field of 2.3 kOe MA–1 cm2 and a critical switching current density as low as 1.5 MA cm–2 in Bi0.9Sb0.1/MnGa bilayers, which underlines the potential of BiSb for industrial applications. A large spin–orbit torque, generated in a conductive topological insulator (TI) Bi0.9Sb0.1 is further employed to effectively switch the magnetization of MnGa in a BiSb/MnGa bilayer Hall-bar device at room temperature.

A conductive topological insulator with large spin Hall effect for ultralow power spin-orbit torque switching.

Spin–orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin–orbit coupling, conduction electron spins, and magnetization. More recently, interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this article, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, 2-D materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers, such as magnetic insulators, antiferromagnets, and ferrimagnets. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three- and two-terminal SOT-magnetoresistive random access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain-wall and skyrmion racetrack memories. This article aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.

/pdf/roadmap-of-spin-orbit-torques-5gdnrw07hi.pdf

Roadmap of Spin–Orbit Torques

As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. Here we report the SOT-assisted switching in heavy metal/magnetic insulator systems. The experiments used a Pt/BaFe12O19 bilayer where the BaFe12O19 layer exhibits perpendicular magnetic anisotropy. As a charge current is passed through the Pt film, it produces a SOT that can control the up and down states of the remnant magnetization in the BaFe12O19 film when the film is magnetized by an in-plane magnetic field. It can reduce or increase the switching field of the BaFe12O19 film by as much as about 500 Oe when the film is switched with an out-of-plane field.

/pdf/spin-orbit-torque-assisted-switching-in-magnetic-insulator-dzjagyo3l2.pdf

Spin–orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy

Periodic nanopatterns can be generated using lithography based on the Talbot effect or optical interference. However, these techniques have restrictions that limit their performance. High resolution Talbot lithography is limited by the very small depth of focus and the demanding requirements in the fabrication of the master mask. Interference lithography, with large DOF and high resolution, is limited to simple periodic patterns. This paper describes a hybrid extreme ultraviolet lithography approach that combines Talbot lithography and interference lithography to render an interference pattern with a lattice determined by a Talbot image. As a result, the method enables filling the arbitrary shaped cells produced by the Talbot image with interference patterns. Detailed modeling, system design and experimental results using a tabletop EUV laser are presented.

Extreme ultraviolet Talbot interference lithography.

Method for protecting Java program progress based on inheritance relationship among progresses

A defect tolerant method of printing periodic structures with submicron resolution is presented. This technique is based on the self-imaging effect produced when a periodic semi-transparent mask is illuminated with coherent light. An analytical description of the effect, numerical simulations, and experimental evidence that is in good agreement with the theoretical analysis is presented. To explore the extent of defect tolerance, masks with different defect layouts were designed and tested.

https://www.engr.colostate.edu/ece///faculty/rocca/pdf/journals/urbanski_etal2_2012.pdf

Defect tolerant extreme ultraviolet lithography technique

A compact nanofabrication system that combines Talbot lithography and a table-top extreme ultraviolet laser is presented. The lithographic method based on the Talbot effect provides a robust and simple experimental setup that is capable to print periodic structures over millimeter square areas free of defects. Test structures were printed and transferred into metal layers showing a complete coherent extreme ultraviolet lithographic process in a table-top system.

Defect-free periodic structures using extreme ultraviolet Talbot lithography in a table-top system

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