We designed a 6-bit <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Ka -band gallium nitride (GaN) phase shifter (PS). A low-pass <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$T$</tex-math> </inline-formula> -type network was adopted for all bits constituting the PS to suppress the increase in size. The bandwidth of the entire PS was determined by the bandwidth of 90 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\circ}$</tex-math> </inline-formula> and 180 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\circ}$</tex-math> </inline-formula> bits. Instead, bits lower than 90 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\circ}$</tex-math> </inline-formula> bit were designed to suppress loss as much as possible within a range that does not affect the entire bandwidth. To this end, the size of the series transistors constituting the low bits was increased to reduce the on-resistance. Furthermore, the increased parasitic capacitance of the transistor reduced the required inductance, further reducing the area. The PS was designed using the 150-nm GaN HEMT process. The core size was 3.65 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times$</tex-math> </inline-formula> 0.79 mm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{2}$</tex-math> </inline-formula> . At the frequency ranges of 36–39 GHz, the insertion loss and rms magnitude error were measured to be lower than 8.68 and 0.62 dB, respectively.

$Ka$-Band GaN HEMT Phase Shifter With $T$-Type Structure for Beamforming Applications

We designed a 6-bit Ka-band gallium nitride (GaN) phase shifter (PS). A low-pass <inline-formula> <tex-math notation="LaTeX">$T$ </tex-math></inline-formula>-type network was adopted for all bits constituting the PS to suppress the increase in size. The bandwidth of the entire PS was determined by the bandwidth of 90° and 180° bits. Instead, bits lower than 90° bit were designed to suppress loss as much as possible within a range that does not affect the entire bandwidth. To this end, the size of the series transistors constituting the low bits was increased to reduce the ON-resistance. Furthermore, the increased parasitic capacitance of the transistor reduced the required inductance, further reducing the area. The PS was designed using the 150-nm GaN HEMT process. The core size was <inline-formula> <tex-math notation="LaTeX">$3.65\times0.79$ </tex-math></inline-formula> mm2. At the frequency ranges of 36–39 GHz, the insertion loss and rms magnitude error were measured to be lower than 8.68 and 0.62 dB, respectively.

Ka-Band GaN HEMT Phase Shifter With T-Type Structure for Beamforming Applications

A 28 GHz digitally controlled 6-bit phase shifter with a precision calibration technique in GaN high-electron mobility transistor (HEMT) technology is presented for Ka-band phased-array systems and applications. It comprises six stages, in which stages 1 and 2 for 5.625° and 11.25° are designed in the form of a switched-line circuit, and stages 3, 4, and 5 for 22.5°, 45°, and 90° are designed in the form of a switched-filter circuit. The final stage 6 for 180° is designed in a single-to-differential balun followed by a single-pole double-throw (SPDT) switch for achieving an efficient phase inversion. A novel continuous tuning calibration technique is proposed to improve the phase accuracy. It controls the gate bias voltage of off-state HEMTs at the stage 6 SPDT switch for fine calibration of the output phase. Fabricated in a 0.15 μm GaN HEMT process using a die size of 1.75 mm2, the circuit produces 64 phase states at 28 GHz with a 5.625° step. The experimental results show that the Root-Mean-Square (RMS) phase error is significantly improved from 8.56° before calibration to 1.08° after calibration. It is also found that the calibration does not induce significant changes for other performances such as the insertion loss, RMS amplitude error, and input-referred P1dB. This work successfully demonstrates that the GaN technology can be applied to millimeter-wave high-power phased-array transceiver systems.

A 28 GHz GaN 6-Bit Phase Shifter MMIC with Continuous Tuning Calibration Technique

Purpose




The design and performance of X-band high power 3-bit phase shifter which has been fabricated in 0.25µm GaN HEMT technology are presented.




Design/methodology/approach




Each bit of this phase shifter design is based on high-pass/low-pass topology.




Findings




For all eight states, the insertion loss is 12.5 ± 2.5 dB from 8-10 GHz and the input return loss is better than 9 dB over 8-10 GHz. The 3-bit phase shifter achieves a RMS phase error of 1o at 8.5 GHz and a RMS amplitude error less than 1.1dB. The measured continuous wave power data demonstrates typical input RF power handing capability of 32 dBm at 8 GHz.




Originality/value




This is to the authors’ knowledge the first published results of 3-bit AlGaN/GaN phase shifter.

High power 3-bit GaN high-pass/low-pass phase shifter for X-band applications

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High power 3-bit GaN high-pass/low-pass phase shifter for X-band applications