In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential applications in various fields, and excellent scalability is comprehensively reviewed. First, a brief overview of the field of emerging memory technologies is provided. The material properties, resistance switching mechanism, and electrical characteristics of RRAM are discussed. Also, various issues such as endurance, retention, uniformity, and the effect of operating temperature and random telegraph noise (RTN) are elaborated. A discussion on multilevel cell (MLC) storage capability of RRAM, which is attractive for achieving increased storage density and low cost is presented. Different operation schemes to achieve reliable MLC operation along with their physical mechanisms have been provided. In addition, an elaborate description of switching methodologies and current voltage relationships for various popular RRAM models is covered in this work. The prospective applications of RRAM to various fields such as security, neuromorphic computing, and non-volatile logic systems are addressed briefly. The present review article concludes with the discussion on the challenges and future prospects of the RRAM.

/pdf/resistive-random-access-memory-rram-an-overview-of-materials-vcd62swizj.pdf

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

https://iopscience.iop.org/article/10.1088/1361-6463/ab2e9e/pdf

Advances in resistive switching based memory devices

Resistive Switching in oxides has offered new opportunities for developing resistive random access memory (ReRAM) devices. Here we demonstrated bipolar Resistive Switching along with magnetization switching of cobalt ferrite (CFO) thin film using Al/CFO/FTO sandwich structure, which makes it a potential candidate for developing future multifunctional memory devices. The device shows good retention characteristic time (>104 seconds) and endurance performance, a good resistance ratio of high resistance state (HRS) and low resistance state (LRS) ~103. Nearly constant resistance values in LRS and HRS confirm the stability and non-volatile nature of the device. The device shows different conduction mechanisms in the HRS and LRS i.e. Schottky, Poole Frenkel and Ohmic. Magnetization of the device is also modulated by applied electric field which has been attributed to the oxygen vacancies formed/annihilated during the voltage sweep and indicates the presence of valence change mechanism (VCM) in our device. It is suggested that push/pull of oxygen ions from oxygen diffusion layer during voltage sweep is responsible for forming/rupture of oxygen vacancies conducting channels, leading to switching between LRS and HRS and for switching in magnetization in CFO thin film. Presence of VCM in our device was confirmed by X-ray Photoelectron Spectroscopy at Al/CFO interface.

/pdf/valence-change-bipolar-resistive-switching-accompanied-with-8r2x5ugulk.pdf

Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe 2 O 4 Thin Film

Top electrode dependent resistive switching in M/ZnO/ITO memristors, M = Al, ITO, Cu, and Au

In a human brain, our closest and very low-power information processor, one neuron transmits electrical signals depending on the electrical stimulation from other neurons. Therefore, it can be regarded as the multi-input one-output system that is the same as an elementary perceptron in the pattern recognition system. In analogy with the actual neurons whose coupling strength varies on a moment-to-moment basis, a flexible control of the weight for each individual input signal is required in order to realize the correct recognition. The analog change of the resistance values observed in the resistance change device is quite suitable for such application. In this contribution, we successfully demonstrate the high-speed analog resistance change in the TiN/TaO x /Ta2O5/TiN resistive analog neuromorphic device (RAND). An introduction of the TiN electrode smoothed the discontinuity in both the resistance switching processes by dc and pulse voltages. On the other hands, digital resistance switching was dominant in TiN/TaO x /Ta2O5/Pt device. We deduce that the electrodes reactivity with oxygen and the interface resistance play a key role for the analog resistance switching. The analog resistance change speed of 200 ns is much faster than the signal transmission speed between neurons and is thought to increase the number of operations per unit energy consumption. By introducing present RAND, the human-brain inspired information processor is expected to become energetically more efficient.

Electrode Material Dependence of Resistance Change Behavior in Ta 2 O 5 Resistive Analog Neuromorphic Device

Low-power resistive random access memory (LP-ReRAM) devices have attracted increasing attention owing to their advantages of low operation power. In this study, a vertical-type LP-ReRAM consisting of TiN/Ti/HfO2/TiN structure was fabricated. The switching mechanism for LP-ReRAM was elucidated as the conductive filament mechanism for conventional mode, and an interface-type switching mechanism for low power mode was proposed. The analysis of low frequency noise shows that power spectral density (PSD) is approximately proportional to 1/f for conventional operation mode. Nevertheless, for low power mode, the PSD of low resistance state (LRS) is proportional to 1/f, while that of high resistance state (HRS) is clear proportional to 1/f2. The envelope of multiple Lorentzian spectra of 1/f2 characteristics due to different traps reveals the characteristics of 1/f. For HRS of low power mode, a limited number of traps results in a characteristic of 1/f2. During the set process, the number of oxygen vacancies increases for LRS. Therefore, the PSD value is proportional to 1/f. Owing to the increase in the number of traps when the operation mode changes to conventional mode, the PSD value is proportional to 1/f. To the best of our knowledge, this is the first study that reveals the different noise characteristics in the low power operation mode from that in the conventional operation mode.

/pdf/investigation-of-switching-mechanism-in-hfo-x-reram-under-3s8ber1xth.pdf

Investigation of switching mechanism in HfO x -ReRAM under low power and conventional operation modes

We investigated and discussed quantitatively the transport properties of individual multiwalled (MW) carbon nanotubes (CNTs) by four-terminal measurement using a nanoprobing system. The homogeneity of the CNT was visibly examined using the electron beam absorbed current function of the nanoprober. The observed ohmic properties of the current–voltage characteristics and metallic transport properties of the CNTs proved that reliable contact of four probes was achieved on the outermost shell of MWCNTs. The experimental methodology was validated for the intrinsic properties of individual CNTs. Lower resistance per unit length was evaluated for thicker CNT. The measured resistance per unit length was lower than those reported by other researchers, but higher than ideally expected.

https://iopscience.iop.org/article/10.7567/JJAP.55.06JH01/pdf

Investigations of electrical transport properties of individual carbon nanotubes with nanoprober

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Investigation of switching mechanism in HfO x -ReRAM under low power and conventional operation modes

Investigations of electrical transport properties of individual carbon nanotubes with nanoprober