Wang Xuewen
Northwest University (China)
13 Papers
41 Citations
Wang Xuewen is an academic researcher from Northwest University (China). The author has contributed to research in topics: Sputtering & Thin film. The author has an hindex of 4, co-authored 13 publications.
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Papers
On hydrophilicity improvement of the porous anodic alumina film by hybrid nano/micro structuring
TL;DR: In this article, by combing porous anodic alumina (PAA) film with nano-structures and microarray of aluminum, the hydrophilicity of hybrid nano-micro structure has been significantly improved.
16
Research on Improved DV-HOP Algorithm against Wormhole Attacks in WSN
Wang Xuewen,Feng Hu,Chunxue Zhai,Yuan Zhang,Xingxing Su,Yan Li,Zhao-Ke Wu,Ting-Ting Li,Zhouhu Deng +8 more
- 01 Jan 2016
TL;DR: The simulation results indicate that the improved DV-HOP algorithm makes the localization coverage percentage can reach 90% on a certain scale of the network, and it makes the error percentage lower when the number of beacons is different.
11
Growth AlxGa1−xN films on Si substrates by magnetron sputtering and high ammoniated two-step method
Wang Xuewen,Xingxing Su,Feng Hu,Lin He,Lewan He,Zhiyong Zhang,Wu Zhao,Kai-Ge Wang,Shuang Wang +8 more
TL;DR: In this article, Al x Ga 1−x N films on Si substrates were synthesized with adjusting process parameters by magnetron sputtering and high ammoniated two-step method.
10
Patent
Controllable preparation method for large area porous micronano composite structure
Wang Kaige,Wang Lei,Wang Xuewen,Zhang Chen,Dan Sun,Shuang Wang,Bai Jintao +6 more
- 09 Dec 2015
TL;DR: In this paper, a controllable preparation method for a large area porous micronano composite structure is proposed, where a micron structure is obtained through a photoetching method, and a nano structure is grown through an anodic oxidation method.
4
Structural and Morphological Characteristics of Inxga1-xN Films Grown on SI (111) by Reactive Magnetron Sputtering
Wang Xuewen,Lin He,Xiaoqing Li,Xingxing Su,Zhiyong Zhang,Wu Zhao +5 more
- 01 Jan 2016
TL;DR: In this article, In x ga 1-x N films with different indium composition were grown on Si(111) substrates by reactive magnetron sputtering, and then annealed at ammonia atmosphere around 700°C for 2 hours.