The invention discloses a production method of a high visible light transmittance vanadium dioxide film. The method comprises the following steps: 1, producing a metallic vanadium film on a substrate; 2, carrying out oxygen introduction annealing on the produced metallic vanadium film under a vacuum condition under an annealing gas pressure of 10-80Pa at an annealing temperature of 400-550DEG C for 60-90min to obtain a vanadium dioxide film with a phase transition effect; and 3, carrying out introduction annealing on the vanadium dioxide film with a phase transition effect under a vacuum condition under an annealing gas pressure of 100-2000Pa at an annealing temperature of 400-550DEG C for 20-40min to peroxidate the surface of the vanadium dioxide film in order to generate vanadic anhydride. The vanadic anhydride film has a visible light transmittance increasing effect, can be closely combined with the vanadium dioxide film, and difficultly sheds. The vanadium dioxide film produced through the method has the advantages of high visible light transmittance, obvious phase transition effect and adjustable phase transition temperature, can adapt to different demands, and can be applied to the field of intelligent windows.

Production method of high visible light transmittance vanadium dioxide-based film

The invention discloses a method for regulating and controlling a phase transition temperature of vanadium dioxide through fast heat treatment. The method comprises the steps of cleaning a sapphire substrate, carrying out sputtering to a vacuum chamber of a target magnetron sputtering apparatus at ultra-high vacuum, depositing a vanadium thin film on a surface, and putting the produced vanadium thin film in a fast annealing furnace for fast-oxidization thermal annealing. According to the method, the vanadium thin film is sputtered by means of magnetron sputtering and then annealed through fast oxidization in the fast annealing furnace; no other substance is involved in the whole process and only annealing parameters are changed; further, phase transition characteristics of the prepared vanadium dioxide thin film are studied by use of four probes; in short, the method is simple in preparation process, easy to control, and capable of regulating and controlling a phase transition temperature of VO2 and reducing the phase transition temperature.

Method for regulating and controlling phase transition temperature of vanadium dioxide through fast heat treatment

The invention provides an amorphous vanadium oxide film material containing V6O13 crystals and a preparing method thereof. The method comprises the following steps: preparing a clean and dry silicon wafer; in a sputtering process, simultaneously introducing a metallic vanadium target used as a target material, the clean and dry silicon wafer used as a substrate, argon used as sputtering gas and oxygen used as reaction gas into a magnetically-controlled sputtering chamber, and depositing an amorphous vanadium oxide film on the silicon substrate; and placing the prepared amorphous vanadium oxide film into a vacuum annealing furnace so as to carry out thermal treatment, and after thermal treatment, obtaining the amorphous vanadium oxide film material containing the V6O13 crystals. According to the preparing method provided by the invention, the prepared film material has neat and compact surfaces and relatively uniform material particles. Meanwhile, the resistance of the produced film material is moderate and sensitive with temperature variation, the temperature coefficient of the resistance is larger than 2%/K, and the variation of the resistance is stable in heating and cooling processes. The amorphous vanadium oxide film material can be used for manufacturing a micro-bolometer.

Amorphous vanadium oxide film material containing V6O13 crystals and preparing method thereof

The invention discloses a vanadium dioxide nanocluster and a preparation method thereof, and relates to the technical field of functional thin film preparation According to the preparation method ofthe vanadium dioxide nanocluster, preparation of the vanadium dioxide nanocluster is carried out by utilizing a gas-phase cluster beam deposition system; two steps of metal vanadium nanocluster deposition and post-annealing treatment are sequentially carried out; the method has the advantages that the technology is simple, the preparation efficiency of nano-cluster particles is high and the size of the nano-cluster particles is controllable; and the prepared vanadium dioxide nanocluster has the characteristics of being small in size, uniform in particles and single in object phase Therefore,the vanadium dioxide nanocluster and the preparation method thereof have an important application value in the fields of gas-sensitive material and photoelectric detection material

Vanadium dioxide nanocluster and preparation method thereof

The invention discloses a method for preparing thin films in different components and doping ratios through multi-target co-sputtering. Due to a traditional film coating means of a normal temperaturemagnetron sputtering film coating system, with V being a proportion, the manner of multi-target co-sputtering is introduced to prepare V thin films in different doping components and doping ratios; then an oxidizing annealing process is used for achieving preparation of VO2 thin films in different doping components and doping ratios, so that the phase transformation temperature of the VO2 thin films is adjusted, and wide application in the fields of uncooled infrared focal planes, optical switches, intelligent energy-saving glass and the like can be achieved. Doped atoms can be one or a combination of tungsten, molybdenum, titanium, tantalum, fluorine and niobium, and two or more can be selected for the number of target materials for use according to the specific condition. The method forpreparing the doped thin films through multi-target co-sputtering effectively avoids the problem that different doping components and doping ratios of a traditional sputtering method need a pluralityof different target materials, the preparation cost is greatly lowered, meanwhile, the flexibility and diversity of doping are improved, and the characteristic of being matched with a large-scale filmcoating production line is achieved.

Method for preparing thin films in different components and doping ratios through multi-target co-sputtering

The invention provides a method for regulating a phase-transition temperature of a vanadium dioxide film. According to the method, a metal vanadium or low-valence vanadium oxide film is subjected to oxygen annealing in vacuum; and the phase-transition temperature of the produced vanadium dioxide film is regulated by changing oxygen partial pressure in the annealing process. The manner for regulating the phase transition is not depended on a substrate, can be implemented on a crystal substrate as well as on a non-crystal substrate, and is a very simple and efficient method for regulating the phase-transition temperature of the vanadium dioxide film. The method has high flexibility, is simple to operate and low in cost, and can be compatible to or co-used with other methods for regulating the phase-transition temperature.

Method for regulating phase-transition temperature of vanadium dioxide film

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Method for regulating phase-transition temperature of vanadium dioxide film