Wanfa Li
Chinese Academy of Sciences
7 Papers
Wanfa Li is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Thin-film transistor & Transistor. The author has co-authored 1 publications.
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Papers
Huge mobility enhancement of InSnZnO thin-film transistors via Al-induced microstructure regularization
Xiaolong Wang,Lingyan Liang,Hengbo Zhang,Haijuan Wu,Wanfa Li,Ce Ning,Guangcai Yuan,Hongtao Cao +7 more
TL;DR: In this paper, high-field effect mobility InSnZnO thin-film transistors (TFTs) are prepared through Al-induced microstructure regularization (AIMR) at an annealing temperature lower to 400 °C.
20
InP Quantum Dots Tailored Oxide Thin Film Phototransistor for Bioinspired Visual Adaptation
Zhixiang Gao,Xin Ju,Haizhong Zhang,Xiaohan Liu,Hongyu Chen,Wanfa Li,Hongliang Zhang,Lingyan Liang,Hui Cao +8 more
TL;DR: InP quantum dots tailored oxide thin film phototransistor for bioinspired visual adaptation exhibits exceptional gate controllability and robust visible-light response, enabling image processing and mimicking human visual adaptation behaviors.
19
Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors
Lingyan Liang,Hengbo Zhang,Ting Li,Wanfa Li,Junhua Gao,Hongliang Zhang,Min-Jun Guo,Shangpeng Gao,Zi-Meng He,Fengjuan Liu,Ce Ning,Hui Cao,Guang Cai Yuan,Chuan Liu +13 more
TL;DR: In this article , the carrier transport/relaxation bilayer stacked AOS TFTs are investigated to solve the mobility-stability conflict, and the charge transport layer (CTL) is made of amorphous In-rich InSnZnO, which favors big average effective coordination number for all cations and more edge-shared structures for better charge transport.
18
Impact of the Source/Drain Electrode Process on the Mobility-Threshold Trade-Off for InSnZnO Thin-Film Transistors
TL;DR: In this article , the authors show that the Mo S/D electrode process on InSnZnO channels has a great impact on the mobility-threshold trade-off for high-mobility amorphous oxide semiconductor (AOS) thin-film transistors.
5
Significant Enhanced Mechanical Properties of Suspended Graphene Film by Stacking Multilayer CVD Graphene Films
TL;DR: In this article , the mechanical properties of suspended CVD-grown graphene film are investigated systematically for the first time, and it is found that monolayer graphene film is hard to maintain on circular holes with a diameter of tens of micrometers, which can be improved greatly by increasing the layer of graphene films.