A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.

Nitride semiconductor device

Systems and methods are described for obtaining and acting upon information indicative of circulatory health and related phenomena in human beings or other subjects.

Circulatory monitoring systems and methods

Barium titanate, which is well known as a basic ferroelectric material, is also of interest when doped because of the interaction between semiconductivity and ferroelectricity. The resistance of blocking layers at surfaces and grain-boundaries is governed mainly by the ferroelectric properties, so that a resistance jump of four decades is observed on heating above the Curie temperature. A survey of the chemical and physical properties of such blocking layers both at surfaces and interfaces is presented. Doped titanates have been used as the basis of two new types of material:

Semiconducting barium titanate

A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor laser device includes an active layer, a p-side cladding layer, and a p-side contact layer laminated in turn. The device further includes a waveguide region of a stripe structure formed by etching from the p-side contact layer. The stripe width provided by etching is within the stripe range of 1 to 3 μm and the etching depth is below the thickness of the p-side cladding layer of 0.1 μm and above the active layer. Particularly, when a p-side optical waveguide layer includes a projection part of the stripe structure and a p-type nitride semiconductor layer on the projection part and the projection part of the p-side optical waveguide layer has a thickness of not more than 1 μm, an aspect ratio is improved in far field image. Moreover, the thickness of the p-side optical waveguide layer is greater than that of an n-side optical waveguide layer.

Nitride semiconductor laser device

An epitaxial composite comprising a thin film of single crystal Group III-V wide band-gap compound semiconductor or semiconductor alloy on single crystal, electrically insulating oxide substrates such as sapphire, spinel, BeO, ThO2, or the like, and on III-V semiconductors or alloys. The thin film may be produced in situ on a heated substrate by reaction of an organic compound containing the Group III constituent, typically tfhe alkyl metal organic, such as trimethylgallium and/or triethylgallium with a Group V hydride such as arsine, phosphine and/or stibine.

Epitaxial composite and method of making

Precipitating highly pure compact silicon carbide upon carriers

Ferroelectricity as a cooperative phenomenon is strongly influenced by the structure of the material. In recent years we have come to understand most of the physical mechanisms involved. Thus we are now able to use this knowledge together with our technological experience and insight to develop tailor-made ceramics for special applications.

Structural engineering of ferroelectrics

The present invention relates to a semiconductor component particularly a semiconductor component with a PN junction whose characteristic electrical property is improved by mechanical tensioning of its semiconductor body. In accordance with the invention, the monocrystalline semiconductor body of the semiconductor component, produced by epitaxy upon a foreign substrate at elevated temperature, is so arranged on the substrate that at operating temperature its characteristic quality will be improved in contrast to an otherwise equal semiconductor component, which is precipitated upon a substrate of the same monocrystalline semiconductor material, due to a different thermal contraction of the substrate, compared to the semiconductor and the resulting tensioning of the semiconductor.

Tensioned semiconductor component

Field effect transistor with a ferroelectric control gate layer

A piezo electric motor having a reciprocating mechanical output driven by a bank of piezo ceramic bending strips, one end of each bending strip being secured in a stationary bed and the other end of each bending strip being connected to a driven member which is reciprocated by the repeated flexing of the bending strips.

Piezo electric motor

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