Highly conducting carbon nanotubes (CNTs)/polydimethylsiloxane (PDMS) composite with a low concentration (5.7 vol.%) has been shown to be applicable in a highly controllable electric heating element. Due to a high shear-processing technique for mixing CNTs into an uncured PDMS matrix, the CNT/PDMS composites have a fairly uniform dispersion and no agglomeration of CNTs. The percolation threshold of the prepared CNT/PDMS composite is achieved ${\sim}{\rm 0.03}~{\rm vol.\%}$ , which is one of the lowest values previously reported in the literature. The fabricated CNT/PDMS composites can be quickly heated from room temperature to 200 $^{\circ}{\rm C}$ within 30 s by applying a DC voltage of 12 V. In addition, the CNT/PDMS composite show good thermal stability and repeatability during a long-term heating test. Our proposed CNT/PDMS composites could be used as a basis for light-weight and flexible heating-unit applications.

Electrical and Thermal Properties of Carbon-Nanotube Composite for Flexible Electric Heating-Unit Applications

A high-frequency amplifying section (2) amplifies an input high-frequency signal with transistors (12-1) to (12-N). A measuring circuit (27) measures the amplitude of the input high-frequency signal, and a bias controlling circuit (26) continuously controls the bias impressed on the transistors (12-1) to (12-N) according to the value of the amplitude measured by the measuring circuit (27). Thus it is possible to suppress a sudden gain variation with a change in the amplitude of the input high-frequency signal.

High-frequency amplifier

Techniques are described, for medical devices that deliver electrical stimulation therapy, for controlling a transition from an initial stimulation location or initial stimulation shape to a user-specified target stimulation location or target stimulation shape in order to limit the rate of change of stimulation. One example method includes receiving, via a programmer for an electrical stimulator, user input indicating a target stimulation zone, and controlling the electrical stimulator to transition electrical stimulation from an initial stimulation zone to the target stimulation zone via one or more intermediate stimulation zones.

Programming techniques for controlling rate of change of electrical stimulation therapy

An integrated circuit includes a first, diode-connected MOSFET and a second, linearly operated MOSFET serving as resistor. A current source may provide a current such that the second MOSFET shows a transconductance constant over temperature and process variations. In one embodiment the MOSFET devices are included in a variable gain amplifier for adjusting the gain.

Process, voltage and temperature control for high-speed, low-power fixed and variable gain amplifiers based on MOSFET resistors

This disclosure describes techniques that support delivering electrical stimulation via an electrode on a housing of an implantable medical device (IMD) while substantially simultaneously delivering electrical stimulation via one or more electrodes, having the same polarity as the electrode on the housing, on one or more leads engaged to the IMD. The stimulation may be constant current-based or constant voltage-based stimulation in the form of pulses or continuous waveforms. Delivery of stimulation via both a housing anode and one or more lead anodes, for example, may allow a user to control current paths between the housing electrode and the lead electrode(s) in a relative manner to achieve different electric or stimulation field shapes.

Programming techniques for stimulation with utilization of case electrode

A precision operational amplifier operating in single supply mode, including a single differential transistor input pair and a cascoded CMOS transistor pair, stabilizes the drain-to-source voltage of the input transistor pair to ensure a stable off-set voltage and increased power supply and common mode rejection. The precision amplifier biases the cascoded CMOS transistor pair in accordance with the stabilized drain-to-source voltage of the differential transistor input pair. Such biasing may take the form of body biasing or biasing the gates of the cascode CMOS transistor pair to ensure that the CMOS transistor pair remain in the active region of operation when the common mode supply voltage approaches zero.

Operational amplifier output stage and method

The value of resistors generally changes with electrical current. For precision analog circuit layout, it is important to predict those resistance variations. For that purpose, we derive for the first time a simple analytic 3-D model to describe thermal resistance and self-heating, which we show as the dominant contribution to resistor nonlinearity for a wide range of resistors. The model shows good agreement with numerical simulations. Measured voltage coefficients of metal and polysilicon resistors can be fit to the model over a wide range of geometries. Finally, we show how thermal resistance can be reduced by placing metal bar structures underneath the resistor and apply the model to quantify the improvement.

Simple Analytical Model of the Thermal Resistance of Resistors in Integrated Circuits

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Operational amplifier output stage and method

Simple Analytical Model of the Thermal Resistance of Resistors in Integrated Circuits