An enhanced lossy substrate model is developed with important features of broadband accuracy and scalability. The broadband accuracy is justified by a good match with open pad S -parameters measured up to 110 GHz and MOSFETs' S- and Y-parameters over 40 GHz. The proven model can accurately simulate four noise parameters ( NFmin, Rn, Re( Yopt), and Im( Yopt) ) and power spectral density of current noises ( Sid and Sig). The scalability has been validated over nanoscale MOSFETs with different finger numbers and adopting various pad structures (lossy, normal, and small pads). This scalable lossy substrate model attributed to two substrate RLC networks under the pads and transmission lines (TMLs) can consistently predict the abnormally strong finger number dependence and nonlinear frequency dependence of noise figure (NFmin) revealed in devices with lossy pads. The enhanced model is useful in guiding pad and TML layouts for effective reduction of extrinsic noises and low noise design. Using a normal pad structure, the NFmin can be effectively suppressed to approach the intrinsic performance, which is nearly independent of finger numbers.

https://ir.nctu.edu.tw:443/bitstream/11536/7659/1/000263479900004.pdf

A Broadband and Scalable Lossy Substrate Model for RF Noise Simulation and Analysis in Nanoscale MOSFETs With Various Pad Structures

W-Band Passive and Active Circuits in 65-nm Bulk CMOS for Passive Imaging Applications

The problem concerned to the verification of the significant parameters of the compact deep-submicron MOS-FET model was investigated in the presented work. The screening experiments methodology is used for the extraction of the significant parameters from the entire set of the compact model parameters. The corresponding computer experiments were performed by means of the Silvaco complex intended for the technology and device design including deep-submicron MOSFET. Thus extracted parameters will be used in the developed deep-submicron MOSFET model for the simulation of the electrical characteristics taking into account quantum effects.

http://ieeexplore.ieee.org/iel7/6526842/6543163/06543290.pdf

Verification of significant parameters in the deep-submicron MOS-FET simulation

PSP: An advanced surface-potential-based MOSFET model

Recent progress in MOS device physics, model development, and model implementation processes has qualitatively changed the capabilities of compact models precisely at a time when the rapid expansion of RF MOSFET applications is imposing the most stringent demands on the new generation of MOSFET models This work reviews the impact of the new modeling paradigm on MOSFET circuit simulation with particular attention to RF issues, non-quasi-static effects, and symmetric surface-potential-based models General principles are illustrated with the simulation results using the latest generation compact MOSFET model (SP)

Advanced compact models: gateway to modern CMOS design

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Advanced compact models: gateway to modern CMOS design