The purpose of this article is to review the current status of a frontier in dynamic spintronics and contemporary magnetism, in which much progress has been made in the past decade, based on the creation of a variety of micro- and nano-structured devices that enable electrical detection of magnetization dynamics. The primary focus is on the physics of spin rectification effects, which are well suited for studying magnetization dynamics and spin transport in a variety of magnetic materials and spintronic devices. Intended to be intelligible to a broad audience, the paper begins with a pedagogical introduction, comparing the methods of electrical detection of charge and spin dynamics in semiconductors and magnetic materials respectively. After that it provides a comprehensive account of the theoretical study of both the angular dependence and line shape of electrically detected ferromagnetic resonance (FMR), which is summarized in a handbook formate easy to be used for analyzing experimental data. We then review and examine the similarity and differences of various spin rectification effects found in ferromagnetic films, magnetic bilayers and magnetic tunnel junctions, including a discussion of how to properly distinguish spin rectification from the spin pumping/inverse spin Hall effect generated voltage. After this we review the broad applications of rectification effects for studying spin waves, nonlinear dynamics, domain wall dynamics, spin current, and microwave imaging. We also discuss spin rectification in ferromagnetic semiconductors. The paper concludes with both historical and future perspectives, by summarizing and comparing three generations of FMR spectroscopy which have been developed for studying magnetization dynamics.

Electrical Detection of Magnetization Dynamics via Spin Rectification Effects

https://robots.iopscience.iop.org/article/10.1088/2631-8695/ac0838/pdf

Magnetic sensors-A review and recent technologies

Electrical detection of magnetization dynamics via spin rectification effects

In the absence of any external applied magnetic field, we have found that a magnetic tunnel junction (MTJ) can produce a significant output direct voltage under microwave radiation at frequencies, which are far from the ferromagnetic resonance condition, and this voltage signal can be increase by at least an order of magnitude by applying a direct current bias. The enhancement of the microwave detection can be explained by the nonlinear resistance/conductance of the MTJs. Our estimation suggests that optimized MTJs should achieve sensitivities for non-resonant broadband microwave detection of about 5,000 mV/mW.

High sensitivity microwave detection using a magnetic tunnel junction in the absence of an external applied magnetic field

The ferromagnetic resonance induced by spin-transfer torque (ST-FMR) is important for microwave detectors, as it can convert an ac microwave signal directly into a dc signal that can be easily measured. However, so far only one resonance mode could be detected for a given external magnetic field, resulting in a relatively low efficiency. This study considers ST-FMR in geometrically confined nanoring magnetic tunnel junctions (NR-MTJs), in which $t\phantom{\rule{0}{0ex}}w\phantom{\rule{0}{0ex}}o$ resonance modes are observed at a given magnetic field. This result might significantly improve the efficiency of such microwave detectors, by means of a dual-mode detection configuration.

Microwave Spin-Torque-Induced Magnetic Resonance in a Nanoring-Shape-Confined Magnetic Tunnel Junction

A far-field microwave imaging technique has been developed using a spintronic sensor based on a magnetic tunnel junction (MTJ). Such a sensor can directly rectify a microwave field into a dc voltage signal using the Seebeck effect. Thanks to the high conversion efficiency of the microwave rectification in MTJs, the microwave power sensitivity of the spintronic sensor is on the order of 1–10 mV/mW. This high sensitivity allows the sensor to directly measure the coherent spatial scattered microwave field distribution, which gives it the ability to non-destructively detect hidden objects down to a few wavelengths in size.

Microwave reflection imaging using a magnetic tunnel junction based spintronic microwave sensor

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Microwave reflection imaging using a magnetic tunnel junction based spintronic microwave sensor