W.J. Chen
National Formosa University
19 Papers
315 Citations
W.J. Chen is an academic researcher from National Formosa University. The author has contributed to research in topics: Oxide & Gate oxide. The author has an hindex of 11, co-authored 19 publications.
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Papers
High Density and Low Leakage Current in $ \hbox{TiO}_{2}$ MIM Capacitors Processed at 300 $^{\circ} \hbox{C}$
Chun-Hu Cheng,Shih-Kai Lin,K.Y. Jhou,W.J. Chen,Chen-Han Chou,F. S. Yeh,J. Hu,Min-Shiang Hwang,T. Arikado,S.P. McAlister,Albert Chin +10 more
TL;DR: In this article, the authors report Ir/TiO2/TaN metal-insulator-metal capacitors processed at only 300degC, which show a capacitance density of 28 fF/mum2 and a leakage current of 3 times 10-8 (25degC) or 6 times 10 −7 (125degC), at -1 V.
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Very low defects and high performance Ge-on-insulator p-MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics
C. H. Huang,M. Y. Yang,Albert Chin,W.J. Chen,Chunxiang Zhu,Byung Jin Cho,M.F. Li,Dim-Lee Kwong +7 more
- 10 Jun 2003
TL;DR: In this article, the authors demonstrate for the first time high quality and dislocation free Ge-on-insulator (GOI) p-MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics.
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Fully silicided NiSi and germanided NiGe dual gates on SiO/sub 2//Si and Al/sub 2/O/sub 3//Ge-on-insulator MOSFETs
C.H. Huang,D.S. Yu,Albert Chin,Chien-Ying Wu,W.J. Chen,Chunxiang Zhu,M.F. Li,Byung Jin Cho,Dim-Lee Kwong +8 more
- 08 Dec 2003
TL;DR: In this paper, the first time fully silicided NiSi (4.55 eV) and germanided NiGe (5.2 eV), dual gates were demonstrated on 1.9 nm-SiO/sub 2/Si and Al/sub O/sub 3/Ge-on-insulator (GOI) MOSFETs (EOT= 1.7 nm).
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Fully silicided NiSi and germanided NiGe dual gates on SiO 2 n- and p-MOSFETs
D.S. Yu,Chien-Ying Wu,C.H. Huang,Albert Chin,W.J. Chen,Chunxiang Zhu,Ming-Fu Li,Dim-Lee Kwong +7 more
TL;DR: In this article, the authors have fabricated the fully silicided NiSi and germanided NiGe dual gates n- and p-MOSFETs on 1.9 nm SiO/sub 2/ gate dielectric.
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