Roughness determines many functional properties of surfaces, such as adhesion, friction, and (thermal and electrical) contact conductance. Recent analytical models and simulations enable quantitative prediction of these properties from knowledge of the power spectral density (PSD) of the surface topography. The utility of the PSD is that it contains statistical information that is unbiased by the particular scan size and pixel resolution chosen by the researcher. In this article, we first review the mathematical definition of the PSD, including the one- and two-dimensional cases, and common variations of each. We then discuss strategies for reconstructing an accurate PSD of a surface using topography measurements at different size scales. Finally, we discuss detecting and mitigating artifacts at the smallest scales, and computing upper/lower bounds on functional properties obtained from models. We accompany our discussion with virtual measurements on computer-generated surfaces. This discussion summarizes how to analyze topography measurements to reconstruct a reliable PSD. Analytical models demonstrate the potential for tuning functional properties by rationally tailoring surface topography - however, this potential can only be achieved through the accurate, quantitative reconstruction of the power spectral density of real-world surfaces.

/pdf/quantitative-characterization-of-surface-topography-using-1di6n32wn5.pdf

Quantitative characterization of surface topography using spectral analysis

Roughness determines many functional properties of surfaces, such as adhesion, friction, and (thermal and electrical) contact conductance. Recent analytical models and simulations enable quantitative prediction of these properties from knowledge of the power spectral density (PSD) of the surface topography. The utility of the PSD is that it contains statistical information that is unbiased by the particular scan size and pixel resolution chosen by the researcher. In this article, we first review the mathematical definition of the PSD, including the one- and two-dimensional cases, and common variations of each. We then discuss strategies for reconstructing an accurate PSD of a surface using topography measurements at different size scales. Finally, we discuss detecting and mitigating artifacts at the smallest scales, and computing upper/lower bounds on functional properties obtained from models. We accompany our discussion with virtual measurements on computer-generated surfaces. This discussion summarizes how to analyze topography measurements to reconstruct a reliable PSD. Analytical models demonstrate the potential for tuning functional properties by rationally tailoring surface topography—however, this potential can only be achieved through the accurate, quantitative reconstruction of the PSDs of real-world surfaces.

/pdf/quantitative-characterization-of-surface-topography-using-45kh8tzr33.pdf

With the continuous scaling down of the critical dimensions (CDs) of semiconductor devices, the linewidth roughness (LWR) becomes a non-negligible parameter that needs to be controlled within 1nm (at 3σ) for the 32nm node and beyond. In this article, the authors have used a CD-atomic force microscopy to investigate the evolution of the LWR during the subsequent lithography and plasma etching steps involved in the patterning of polysilicon transistor gates. The authors demonstrate that the LWR present on the etching mask [photoresist/bottom antireflective coating (BARC), SiO2 or amorphous carbon hard masks] right before the gate etching is transferred into the polysilicon during the HBr∕Cl2∕O2 gate etching step. Thus, the final polysilicon LWR directly is strongly dependent on the lithography and plasma etching steps preceding the gate etching step. The authors show that by applying plasma treatment to minimize the resist mask LWR prior to all the other etching steps or by optimizing the BARC opening plasm...

Linewidth roughness transfer measured by critical dimension atomic force microscopy during plasma patterning of polysilicon gate transistors

The National Institute of Standards and Technology (NIST) and SEMATECH are working to address traceability issues in semiconductor dimensional metrology. In semiconductor manufacturing, many of the measurements made in the fab are not traceable to the SI unit of length. This is because a greater emphasis is often placed on precision and tool matching than on accuracy. Furthermore, the fast pace of development in the industry makes it difficult to introduce suitable traceable standard artifacts in a timely manner. To address this issue, NIST and SEMATECH implemented a critical-dimension atomic-force-microscope-based reference measurement system (RMS). The system is calibrated for height, pitch, and width, and has traceability to the SI definition of length in all three axes. Because the RMS is expected to function at a higher level of performance than inline tools, the level of characterization and handling of uncertain sources is on a level usually seen in instruments at national measurement institutes. In this work, we discuss recent progress in reducing the uncertainty of the instrument as well as details of a newly implemented performance monitoring system. We also present an example of how the RMS concept can be used in a semiconductor manufacturing environment.

Progress on implementation of a reference measurement system based on a critical-dimension atomic force microscope

Progress on Implementation of a Reference Measurement System based on a Critical-dimension Atomic Force Microscope | NIST

This paper presents the first known image reconstruction of complex probe tip shapes and the removal of those shapes from reentrant topologies that are encountered in critical dimension (CD) measurements. Algorithm improvements are described that enable reentrant image reconstruction. In addition, a solution is presented which eliminates image artifacts that result from noise when using Legendre transform or “slope-matching” reconstruction techniques. The new methods are compared to existing technology and demonstrated on reentrant features. Although demonstrated with two-dimensional profiles, the methods are readily extendable to three-dimensional morphologies. Tip wear effects on CD measurement are investigated and compared with the previous state-of-the-art method (“tip width subtraction”) and fully reconstructed images, clearly showing superior measurement stability for the image reconstruction method. Finally, CD measurements derived from reconstructed images are compared directly with Hitachi S4000 ...

Tip characterization and surface reconstruction of complex structures with critical dimension atomic force microscopy

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Tip characterization and surface reconstruction of complex structures with critical dimension atomic force microscopy