5 Papers
80 Citations
W. Flick is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Sputtering & Ohmic contact. The author has an hindex of 4, co-authored 5 publications.
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Papers
Reactive sputtering of RuO2 films
TL;DR: In this article, the growth rate, resistivity and intrinsic stress of RuO 2 films deposited by reactive sputtering with an O 2 Ne or O 2 ε-Ar gas mixture were investigated as a function of the following sputtering parameters: gas composition, gas pressure, sputtering power and substrate bias.
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Reactively sputtered indium oxide diffusion barrier
Elzbieta Kolawa,C. W. Nieh,J.M. Molarius,L. Tran,Carol M. Garland,W. Flick,M.-A. Nicolet,F. C. T. So,J.C.S. Wei +8 more
TL;DR: In 2 O 3 films about 80 nm thick prepared by reactive sputtering of an indium target in an O 2 -Ar plasma are excellent diffusion barriers between aluminum and silicon for annealing at up to 650°C for 15 min this article.
10
Chemical stability of vanadium boride with aluminum
Elzbieta Kolawa,J.M. Molarius,W. Flick,C. W. Nieh,L. Tran,M.-A. Nicolet,F. C. T. So,J.C.S. Wei +7 more
TL;DR: In this article, the stability of r.f.sputtered vanadium boride thin films is investigated for application as diffusion barriers between silicon and aluminum layers, and they find that VB 2.0 films prevent the interdiffusion and reaction between aluminum overlayers and silicon on heat treatment at up to 500°C for 30 min in vacuum.
10
Stable Solid-Phase Ohmic Contacts to n-GaAs with Diffusion Barriers
TL;DR: In this article, contact resistivities in the 10−δ Ω cm range were achieved by a solid phase reaction between Ni/Ge and GaAs, and the electrical properties of these contacts were characterized by backscattering spectrometry, transmission electron microscopy and contact resistivity measurements.
3
Stable solid-phase contact to n-GaAs
Elzbieta Kolawa,W. Flick,C. W. Nieh,J.M. Molarius,M.-A. Nicolet,J. L. Tandon,J. H. Madok,F. C. T. So +7 more
TL;DR: In this article, an ohmic contact to n-type GaAs of the configuration GaAs/Ni/Ge/W/sub 60/N/sub 40/Au has been investigated.