Fourier Transform Infrared (FTIR) Spectroscopy has long been utilized as an analytical technique for qualitatively determining the presence of various different chemical bonds in gasses, liquids, solids, and on surfaces. Most recently, FTIR has been proven to be extremely useful for understanding the different types of bonding present in low dielectric constant “low-k” organosilicate materials. These low-k materials are predominantly utilized in the nanoelectronics industry as the interlayer dielectric material in advanced Cu interconnect structures. In this article, we utilize FTIR to perform a detailed analysis of the changes in chemical bonding that occur in Plasma Enhanced Chemically Vapor Deposited (PECVD) low-k a-SiC:H thin films. PECVD low-k a-SiC:H materials are equally important in advanced Cu interconnects and are utilized as both etch stop and Cu diffusion barrier layers. We specifically investigate the changes that occur in low-k a-SiC:H films as the dielectric constant and mass density of these films are decreased from > 7 to 3 respectively. We show that decreases in mass density and dielectric constant are accompanied by both an increase in terminal SiH x and CH x bonding and a decrease in Si C network bonding. At densities of 1.85 g/cm 3 , the concentration of terminal SiH x bonding peaks and subsequent hydrogen incorporation are achieved predominantly via terminal CH 3 groups. Low-k a-SiC:H films with k  3 can be achieved via incorporating larger organic phenyl groups but result in non-stoichiometric carbon rich films. Electron beam curing of these lower density a-SiC:H films results in volatilization of the phenyl groups leaving behind nanoporous regions and production of some C C C chain linkages in the network.

Fourier transform infrared spectroscopy investigation of chemical bonding in low-k a-SiC:H thin films

A series of epitaxial 4H-SiC thin films grown by low pressure chemical vapor deposition (LPCVD) were characterized using various techniques, including x-ray diffraction (XRD), Fourier transform infrared (FTIR) reflectance, Raman scattering, and x-ray photoelectron spectroscopy (XPS). The epilayers were grown on heavily doped n-type 4H-SiC substrates using different gas compositions. XRD showed that the thin films were single crystal. Raman scattering identified the films to be 4H polytype. FTIR reflectivity spectra indicated improvement in the film quality over that of the substrate and atmospheric pressure-grown epilayers. XPS scans revealed the existence of Si, C, and O along with C-contaminant species in the form of CH and carbon oxides. Variations in crystalline quality, optical, and surface properties with the growth conditions were studied. This study also provides an important comparison between low and atmospheric pressure-grown 4H-SiC epilayers.

Structural, optical, and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor deposition

A comprehensive review of the materials analysis of cubic silicon carbide films grown on Si substrates by chemical vapor deposition is presented. Results from various materials analysis techniques, including low-temperature photoluminescence, Raman scattering, optical reflectance and transmission, Fourier transform infrared spectroscopy, X-ray diffraction, electron microscopy, and theoretical analysis, are shown. Analyses by X-ray photoelectron spectroscopy, secondary-ion mass spectrometry, Rutherford backscattering, ion channeling, and other techniques are introduced. This chapter briefly reviews the results and achievements of the author and his collaborators in the past two decades. Interesting problems, further developments, and directions to be explored are discussed. This review shows the necessity for an interdisciplinary analysis of modern materials.

Optical and Interdisciplinary Analysis of Cubic SiC Grown on Si by Chemical Vapor Deposition

Raman scattering and photoluminescence (PL) under near-UV excitations were used to assess the 6H-SiC films epitaxied on 6H-SiC by low pressure vertical chemical vapour deposition (LPV-CVD). Raman linewidths and relative intensities with respect to the PL emissions were used to characterize the quality of the 6H-SiC films. Ti-related PL and outgoing resonance Raman scattering were studied. Samples grown by LPV-CVD with different growth parameters were compared on the basis of their Raman-PL spectra. This study showed that a combination of Raman and PL measurements can be used as a convenient method to assess the 6H-SiC/6H-SiC homoepitaxial structures.

Combined Raman and luminescence assessment of epitaxial 6H-SiC films grown on 6H-SiC by low pressure vertical chemical vapour deposition

Room Temperature (RT) Infrared (IR) Reflectance spectra are studied both theoretically and experimentally on 3C-SiC films grown on silicon (100) substrate by low pressure chemical vapor deposition (LPCVD). By the use of transfer matrix method, the spectral features influenced by film thickness, phonon-damping constant and free carrier concentration are systematically studied. Comparisons of reflectance spectra are made between experimental spectra and those of ideal samples. A modified effective medium model with consideration of the presence of interfacial layer is introduced to interpret some unusual features. Although some of our results are qualitative, careful analysis of reflectance spectra does provide valuable information about film quality.

Infrared reflectance study of chemical-vapor-deposition-grown 3C-silicon carbide on silicon substrate

A combined structural and optical assessment of cubic (3C-) SiC thin films grown on Si (100) substrates by chemical vapor epitaxy (CVD) is presented. The CVD growth was performed at both atmospheric and low (100 Torr) pressure, using a vertical reactor. The CVD-grown 3C-SiC films with different growth time were characterized by X-ray diffraction, Raman scattering and Fourier transform infrared (FTIR) spectroscopy to be single crystalline with a high degree of crystal perfection. The film thickness was determined from FTIR spectra. Variations of X-ray, FTIR and Raman spectra with different growth conditions and film thicknesses are studied comparatively. Related problems are discussed.

Combined Structural and Optical Assessment of CVD Grown 3C-SiC/Si

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Combined Structural and Optical Assessment of CVD Grown 3C-SiC/Si