Vladimir A. Gritsenko
Russian Academy of Sciences
172 Papers
720 Citations
Vladimir A. Gritsenko is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Silicon & Amorphous solid. The author has an hindex of 29, co-authored 153 publications. Previous affiliations of Vladimir A. Gritsenko include The Chinese University of Hong Kong & Novosibirsk State Technical University.
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Papers
Charge Transport Mechanism in the Forming-Free Memristor Based on PECVD Silicon Oxynitride
TL;DR: In this paper , the charge transport mechanism in the PECVD silicon oxynitride-based memristor in high and low resistance states cannot be described by the Schottky effect, thermally assisted tunneling model, Frenkel effect model of Coulomb isolated trap ionization, Hill-Adachi model of overlapping Coulomb potentials, Makram-Ebeid and Lannoo model of multiphonon isolated trap ions, Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, or the Shklovskii-Efros percolation model.
Large-scale potential fluctuations caused by SiO x compositional inhomogeneity
TL;DR: In this article, the short-range order in amorphous SiO fixme xcffff (0 ≤ x ≤ 2) films has been studied by high-resolution X-ray photoelectron spectroscopy.
3
Multilayer graphene-based flash memory
TL;DR: In this paper, the write/erase and charge storage characteristics of a memory element based on a Si/HfO2/multilayer graphene/SiO 2/Si structure were evaluated.
3
Charge carrier transport mechanism in high- κ dielectrics and their based resistive memory cells
Damir R. Islamov,Damir R. Islamov,Vladimir A. Gritsenko,Vladimir A. Gritsenko,Chun-Hu Cheng,Albert Chin +5 more
TL;DR: In this article, the currentvoltage characteristics of thin dielectric films of HfO and Ni/HfO/Ni structures are analyzed and compared with various theoretical models: the Poole-Frenkel trap ionization model, the multiphonon trap ionisation model, and the Schottky effect at the Ni/Ni interface.